M15T2G16128A-EFBG2D

The M15T2G16128A-EFBG2D is a 2Gb DDR3(L) SDRAM device organized as 128M × 16 with an eight-bank architecture. It delivers double-data-rate transfers and supports DDR3(L)-2133 operation to address high-density memory requirements in industrial and general applications.

Designed for board-level integration, this JEDEC-compliant device supports both 1.35V and 1.5V supply options, a 96-ball BGA package, and an extended operating temperature range for industrial deployments.

Key Features

• Memory Architecture  2.147 Gbit density organized as 128M × 16 with 8 banks and a 2KB page size per bank.
• Performance  1.066 GHz clock frequency supporting DDR3(L)-2133 data rate; documented access time 13.91 ns and write cycle time (word page) 15 ns.
• Interface and Timing  Differential clock (CK/CK) and data strobe (DQS/DQS), double-data-rate on DQs/DQS/DM, configurable CAS latencies and programmable burst length/type. CAS Latency options include 5–14; CAS write latency and additive latency are supported per MR settings.
• Power and Voltage  Supports SSTL_135 (VDD/VDDQ = 1.35V) and SSTL_15 (VDD/VDDQ = 1.5V). Features include auto refresh, self refresh, power down, partial array self refresh (PASR) and programmable power-saving modes.
• Signal Integrity and Calibration  Configurable drive strength (DS), configurable On-Die Termination (ODT) with RTT_Nom and RTT_WR options, and ZQ calibration for DS/ODT impedance accuracy via external ZQ pad.
• Read/Write Leveling and Programmability  Write leveling via mode register settings and read leveling via MPR, plus programmable write recovery, burst control and precharge power-down behavior.
• Package and Mounting  Surface-mount 96 ball BGA package optimized for compact board layouts and high-density memory designs.
• Qualification and Environmental  JEDEC DDR3(L) compliant, industrial grade with operating temperature −40°C to 95°C, and RoHS compliant.

Typical Applications

• Industrial Systems  Use in industrial controllers and equipment where JEDEC compliance and an extended −40°C to 95°C operating range are required.
• General-Purpose Computing  Memory expansion for general applications requiring high-density DDR3(L) storage and standard DDR3 feature sets.
• Embedded Memory Modules  Integration into compact module designs that require a 2Gb DDR3(L) device in a 96-ball BGA footprint.
• Board-Level High-Density Memory  Suitable for designs needing a 128M × 16 organization with programmable timing and signal-integrity controls.

Unique Advantages

• Dual-voltage compatibility: Supports both 1.35V and 1.5V operation (SSTL_135 and SSTL_15) for flexibility across system power domains.
• Wide operating range: Industrial-grade specification with −40°C to 95°C operating temperature for harsh-environment deployment.
• Extensive timing programmability: Multiple CAS latency, write latency and burst options enable tuning to system requirements.
• Signal-integrity controls: Configurable DS and On-Die Termination plus ZQ calibration improve impedance accuracy and system signal performance.
• Compact, high-density package: 2Gb capacity in a 96-ball BGA supports high-density board layouts.
• JEDEC compliance: Adherence to DDR3(L) JEDEC standards supports interoperability with standard DDR3 tooling and designs.

Why Choose M15T2G16128A-EFBG2D?

The M15T2G16128A-EFBG2D combines a 2Gb DDR3(L) density with flexible timing, dual-voltage operation and on-die termination/configuration features to support demanding industrial and general applications. JEDEC compliance and a compact 96-ball BGA package make it suitable for designers needing standardized, board-level memory building blocks.

Its programmable timing options, ZQ calibration and leveling features provide designers with the controls needed to match system timing and signal-integrity requirements while the wide operating temperature range and RoHS compliance align to industrial deployment needs.

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