M15T2G16128A-DEBG2P

The M15T2G16128A-DEBG2P is a 2Gb DDR3(L) SDRAM device organized as 128M×16 with eight internal banks and an 8n prefetch architecture. It delivers DDR3(L)-1866 class performance (933 MHz clock), supports dual supply levels (1.35V and 1.5V), and is specified for industrial temperature operation.

This JEDEC-compliant memory device is intended for applications that require high-speed, low-voltage volatile storage in a compact surface-mount 96 ball BGA package, with features for signal integrity and programmable timing.

Key Features

• Core & Memory Organization 2.147 Gbit capacity organized as 128M × 16 with 8 internal banks and 2KB page size per bank; 8n prefetch architecture for DDR operation.
• Performance 933 MHz clock frequency (DDR3(L)-1866 data rate) with documented access time of 13.75 ns and write cycle time (word/page) of 15 ns.
• Voltage & Power Supports SSTL_135 (VDD/VDDQ = 1.35V) and SSTL_15 (VDD/VDDQ = 1.5V) power rails for low-voltage and standard DDR3 operation.
• Signal & Timing Differential clock (CK/ CK) and differential data strobe (DQS/DQS) with double-data-rate on DQ, DQS and DM; programmable CAS latency, CAS write latency and additive latency options.
• Data Integrity & Calibration On-die termination (configurable RTT_NOM and RTT_WR), ZQ calibration for DS/ODT impedance accuracy, and read/write leveling support via MR/MPR settings.
• Power Management & Refresh Auto Refresh, Self Refresh, Partial Array Self Refresh (PASR), and Power Down modes for power optimization in system designs.
• Package & Mounting Surface-mount 96 ball BGA package optimized for compact board layouts.
• Operating Range & Qualification Industrial operating temperature range −40°C to 95°C and JEDEC qualification; RoHS compliant.

Typical Applications

• Industrial Systems – Industrial-grade temperature range (−40°C to 95°C) and JEDEC compliance make the device suitable for industrial embedded memory needs.
• Embedded Platforms – Low-voltage operation (1.35V) and compact 96 ball BGA packaging fit space-constrained embedded designs requiring high-speed volatile memory.
• General High-Speed Memory – DDR3(L)-1866 (933 MHz clock) performance supports general applications that require high data throughput and programmable timing.

Unique Advantages

• Dual Supply Flexibility – Supports both 1.35V and 1.5V operation (SSTL_135 / SSTL_15), enabling design flexibility for low-voltage or standard DDR3 domains.
• Programmable Timing – Multiple CAS latency and write latency settings provide timing flexibility to match system requirements and maximize compatibility.
• Signal Integrity Features – Configurable on-die termination, ZQ calibration, and read/write leveling improve interface stability and margining on high-speed buses.
• Industrial Temperature Rating – Specified −40°C to 95°C operation supports deployments in harsh temperature environments.
• Compact Surface-Mount Packaging – 96 ball BGA reduces PCB footprint while providing a high-density memory solution.
• Standards Compliance – JEDEC DDR3(L) compliance and RoHS conformance simplify integration and regulatory expectations.

Why Choose M15T2G16128A-DEBG2P?

The M15T2G16128A-DEBG2P combines DDR3(L)-class performance with configurable timing, signal integrity controls, and dual-voltage operation to meet a wide range of industrial and embedded memory requirements. Its JEDEC compliance and industrial temperature rating make it a reliable choice for systems needing proven DDR3(L) functionality in a compact 96 ball BGA footprint.

This device is well suited to designers seeking a verified, programmable DDR3(L) memory component that balances speed, low-voltage operation, and environmental robustness while maintaining compact board-level integration.

Request a quote or submit a procurement inquiry to receive pricing and availability information for the M15T2G16128A-DEBG2P.