M15T2G16128A (2R)

2Gb DDR3L SDRAM Ind.
Part Description

DDR3L 2Gb, 1.35V / 1.5V

Quantity 881 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusActive
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package96 Ball BGAMemory FormatDRAMTechnologyDDR3 SDRAM
Memory Size2 GbitAccess Time13.75 nsGradeIndustrial
Clock Frequency933 MHzVoltage1.35VMemory TypeVolatile
Operating Temperature-40°C – 95°CWrite Cycle Time Word Page15 nsPackaging96 Ball BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization128M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.36

Overview of M15T2G16128A (2R) – -40~95°C, DDR3L 2Gb, 1.35V / 1.5V

The M15T2G16128A (2R) is a 2Gb DDR3(L) SDRAM device from ESMT organized as 128M × 16 with eight internal banks and an 8n prefetch architecture. It supports low-voltage 1.35V operation (SSTL_135) and standard 1.5V operation (SSTL_15), JEDEC DDR3(L) compliance, and is specified for industrial-grade operation from -40°C to 95°C.

Designed for board-level integration where density, JEDEC compatibility and thermal margin matter, this BGA-packaged memory delivers configurable timing, signal integrity controls and power-saving modes for embedded and industrial system designs.

Key Features

  • Memory Organization & Density — 2.147 Gbit capacity organized as 128M × 16 providing a 2Gb device density in a single DRAM package.
  • DDR3(L) Architecture — Double-data-rate operation with 8n prefetch, differential clock (CK/CK) and data strobe (DQS/DQS) for source-synchronous data transfers.
  • Voltage & Interface — Supports SSTL_135 (VDD/VDDQ = 1.35V) and SSTL_15 (VDD/VDDQ = 1.5V) with a parallel memory interface and standard DDR3(L) signaling.
  • Performance & Timing — Device data lists a clock frequency of 933 MHz, access time 13.75 ns and write cycle time (word/page) 15 ns; supports programmable CAS latencies and burst length options.
  • Signal Integrity & Calibration — Configurable drive strength (DS), configurable on-die termination (ODT), ZQ calibration via external ZQ pad and selectable RTT_Nom/RTT_WR values for impedance accuracy.
  • Robust Refresh & Power Modes — Auto Refresh, Self Refresh, Partial Array Self Refresh (PASR), Power Down and other power-saving modes to manage power use and data integrity.
  • Read/Write Leveling & Programmability — Write leveling (via MR), read leveling (via MPR), and multiple programmable functions including CAS write latency, additive latency and write-recovery time options.
  • Package & Temperature — Supplied in a 96-ball BGA package with surface-mount mounting and industrial operating temperature range of -40°C to 95°C.
  • Standards & Qualification — JEDEC DDR3(L) compliant and provided in Pb‑free package options per ordering variants.

Typical Applications

  • Industrial Embedded Systems — Memory for control and processing modules that require industrial temperature operation and JEDEC-compliant DDR3(L) behavior.
  • Board-Level Designs Targeting Low-Voltage Operation — Systems that leverage 1.35V low-voltage operation for reduced power consumption while maintaining DDR3 performance features.
  • Systems Requiring Programmable Timing and Signal Tuning — Designs that need configurable CAS latencies, on-die termination and calibration options to meet platform signal-integrity requirements.

Unique Advantages

  • Extended Temperature Range: Rated for -40°C to 95°C to meet industrial thermal requirements without additional derating information needed in the BOM.
  • Dual Supply Flexibility: Supports both 1.35V and 1.5V supplies (SSTL_135 / SSTL_15) for compatibility with low-voltage and standard DDR3 system rails.
  • Signal-Integrity Controls: Configurable DS, ODT and ZQ calibration provide on-chip means to tune impedance and improve interface stability on complex boards.
  • Programmable Memory Timing: Multiple CAS, write-latency and burst-length options allow designers to match device behavior to system timing constraints.
  • Compact BGA Footprint: 96-ball BGA package delivers 2Gb density in a surface-mount form factor suitable for modern embedded PCBs.
  • JEDEC Compliance: Industry-standard DDR3(L) compliance simplifies integration with JEDEC-compatible memory controllers and ecosystems.

Why Choose M15T2G16128A (2R)?

The M15T2G16128A (2R) positions itself as an industrial-grade DDR3(L) memory option that combines 2Gb density with dual-voltage support and a broad operating temperature range. Its programmable timing, on-die termination options and calibration features make it suitable for designs that require fine control over signal integrity and power modes.

This device is appropriate for engineers and procurement teams specifying JEDEC-compliant DDR3(L) memory for embedded and industrial systems that demand stable operation across temperature extremes, configurable timing behavior and a compact BGA package backed by ESMT's DDR3(L) product family.

If you’d like pricing, lead-time or volume quote information for M15T2G16128A (2R), request a quote or submit an inquiry and our team will respond with details tailored to your project requirements.

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