M15T1G8128A-DEBG2S

1Gb DDR3L SDRAM Ind.
Part Description

DDR3L SDRAM 1Gb (128M×8), DDR3(L)-1866, 78 Ball BGA

Quantity 1,052 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package78 Ball BGAMemory FormatDRAMTechnologyDDR3L
Memory Size1 GbitAccess Time13.91 nsGradeIndustrial
Clock Frequency933 MHzVoltage1.35V, 1.5VMemory TypeVolatile
Operating Temperature-40°C – 95°CWrite Cycle Time Word Page15 nsPackaging78 Ball BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization128M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.32

Overview of M15T1G8128A-DEBG2S – DDR3L SDRAM 1Gb (128M×8), DDR3(L)-1866, 78 Ball BGA

The M15T1G8128A-DEBG2S is a 1.074 Gbit DDR3(L) SDRAM organized as 128M × 8 with eight internal banks and an 8n prefetch architecture. It supports DDR3(L)-1866 operation (933 MHz clock) and is JEDEC-compliant for designs that require synchronous double-data-rate memory in a compact 78-ball BGA package.

With dual supply support (1.35 V and 1.5 V), industrial-grade temperature range, and configurable on-die termination and drive strength, this device targets industrial and embedded applications that require low-voltage operation, stable signal integrity, and surface-mount BGA integration.

Key Features

  • Core & Architecture 16M × 8 I/Os × 8 banks DDR3(L) organization with 8n prefetch architecture for synchronous double-data-rate operation.
  • Performance Supports a 933 MHz clock frequency (DDR3(L)-1866) with listed timing options and programmable CAS latencies to match system requirements.
  • Memory Timing Measured access time of 13.91 ns and write cycle time (word/page) of 15 ns for predictable timing behavior.
  • Power & Voltage SSTL_135 and SSTL_15 compatible operation with VDD/VDDQ = 1.35 V (typical) and 1.5 V options for flexible power designs.
  • Signal & Data Integrity Differential clock (CK/CK) and data strobe (DQS/DQS) with configurable on-die termination (RTT_Nom / RTT_WR) and ZQ calibration for impedance accuracy.
  • Memory Management Auto Refresh, Self Refresh, Partial Array Self Refresh (PASR), and Power Down modes for standard DDR3(L) power and refresh control.
  • System Compatibility & Training Write leveling and read leveling support along with configurable drive strength (DS) and on-die termination settings for system integration and signal timing alignment.
  • Programmable Functions Programmable CAS Latency, CAS Write Latency, Additive Latency, Burst Type/Length and multiple write recovery options for design flexibility.
  • Package & Grade Pb‑free 78 ball BGA surface-mount package rated for industrial use with an operating temperature range of −40°C to 95°C.
  • Standards & Compliance JEDEC DDR3(L) compliant and RoHS compliant.

Typical Applications

  • Industrial systems — Provides JEDEC-compliant DDR3(L) memory with an extended −40°C to 95°C operating range suitable for industrial environments.
  • Embedded controllers and modules — Compact 78 ball BGA package supports surface-mount integration where board space and reliable solder mounting are required.
  • General-purpose high-speed memory — DDR3(L)-1866 data rate capability and programmable timing suit designs that need synchronous double-data-rate DRAM.

Unique Advantages

  • Dual-voltage operation — Supports both 1.35 V and 1.5 V supply rails, enabling flexibility for systems targeting lower power or legacy voltage domains.
  • Industrial temperature qualification — Rated for −40°C to 95°C operation, reducing the need for additional thermal mitigation in harsh environments.
  • Signal tuning and calibration — Configurable on-die termination, drive strength and ZQ calibration help maintain signal integrity across board layouts and system configurations.
  • Programmable timing options — Wide range of CAS latencies, write latencies and burst configurations allow tuning for performance or stability as needed.
  • JEDEC compliance — Industry-standard DDR3(L) behavior and control signaling simplify system design and interoperability with JEDEC-compliant controllers.
  • Compact BGA packaging — 78 ball BGA reduces PCB footprint while supporting surface-mount assembly processes common in embedded and industrial product lines.

Why Choose M15T1G8128A-DEBG2S?

The M15T1G8128A-DEBG2S delivers JEDEC-compliant DDR3(L) functionality in a compact 78 ball BGA package with dual-voltage support and industrial temperature rating. Its combination of configurable termination, calibration, and programmable timing makes it suitable for designs that require adaptable signal integrity and timing alignment without sacrificing standard DDR3(L) operation.

This device is well suited to engineering teams and procurement for embedded and industrial systems that need a proven DDR3(L) SDRAM footprint, predictable timing (access and write cycle times), and flexibility across 1.35 V and 1.5 V supply domains.

Request a quote or submit an RFQ to initiate pricing and availability for the M15T1G8128A-DEBG2S and to discuss lead times for your production requirements.

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