M15T1G1664A-EFBG2T

The M15T1G1664A-EFBG2T is a 1.074 Gbit DDR3(L) SDRAM organized as 64M × 16, supporting DDR3(L)-2133 operation at a maximum clock frequency of 1.066 GHz. It implements DDR3(L) architecture with double-data-rate transfers, differential clock and data strobe signals, and an 8n prefetch.

Targeted for commercial-grade systems, this surface-mount device supports both 1.35 V and 1.5 V power rails, JEDEC compliance, and a 0 °C to 85 °C operating range, providing a compact 96-ball BGA package for board-level integration.

Key Features

• Memory Core & Organization — 1.074 Gbit capacity arranged as 64M × 16 with 8n prefetch architecture and double-data-rate transfers on DQ, DQS and DM.
• Performance — Rated for up to 1.066 GHz input clock (DDR3(L)-2133) with typical access time of 13.91 ns and write cycle time (word page) of 15 ns.
• Voltage Flexibility — Supports SSTL_135 and SSTL_15 interfaces with VDD/VDDQ = 1.35 V (± tolerances) and 1.5 V, allowing low-voltage operation where required.
• Signal & Data Integrity — Configurable on-die termination (ODT), configurable drive strength (DS), ZQ calibration for impedance accuracy, and read/write leveling features for system timing alignment.
• Power Management — Auto refresh, self-refresh, partial array self-refresh (PASR), and power-down modes to manage power in various operating states.
• Programmable Timing & Modes — Programmable CAS latencies, CAS write latencies, additive latency, write recovery, burst type/length and multiple MR configurations to match system timing and protocol requirements.
• Package & Mounting — 96 Ball BGA surface-mount package designed for compact board-level integration; Pb-free and RoHS compliant.
• Qualification & Range — JEDEC-compliant DDR3(L) device specified for commercial-grade operation from 0 °C to 85 °C.

Typical Applications

• Commercial Embedded Systems — Provides 1.074 Gbit DDR3(L) memory in a compact 96-ball BGA for board-level memory expansion in commercial embedded designs.
• Consumer Electronics — Dual-voltage support (1.35 V / 1.5 V) and JEDEC compliance enable integration into consumer devices requiring standard DDR3(L) memory interfaces.
• Networking & Communications — DDR3(L)-2133 performance, configurable ODT and drive strength, and read/write leveling help meet timing and signal-integrity needs in networking equipment.
• Industrial Control — Commercial temperature range (0 °C to 85 °C) and robust power management modes (self-refresh, PASR, power-down) support a range of industrial control applications.

Unique Advantages

• Low-Voltage Operation: Support for both 1.35 V and 1.5 V rails lets designers optimize power and compatibility across platforms.
• High Throughput: Up to 1.066 GHz clock and DDR3(L)-2133 data rate deliver high-bandwidth memory access suitable for performance-sensitive tasks.
• Configurable Signal Integrity: On-die termination, configurable output driver impedance, and ZQ calibration enable precise impedance control and system matching.
• Flexible Timing Control: Programmable CAS, CWL, additive latency, and write recovery settings provide adaptability to diverse system timing requirements.
• Power-Saving Modes: Auto refresh, self-refresh, PASR and power-down modes reduce active and standby power depending on system state.
• Surface-Mount Integration: 96 Ball BGA package offers compact board footprint and standard surface-mount assembly compatibility.

Why Choose M15T1G1664A-EFBG2T?

The M15T1G1664A-EFBG2T positions itself as a JEDEC-compliant DDR3(L) SDRAM option that balances capacity, configurable timing, and signal-integrity features for commercial-grade designs. Its dual-voltage support, comprehensive mode programmability, and integrated impedance calibration tools make it suitable for designers requiring standard DDR3(L) functionality with flexible system integration.

This device is appropriate for projects that need a compact 96-ball BGA memory solution with defined electrical characteristics, programmable operation modes, RoHS compliance, and an operating range aligned to commercial system requirements.

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