M15T1G8128A-EFBG2S

The M15T1G8128A-EFBG2S is a 1Gb DDR3(L) SDRAM device organized as 128M × 8 with eight internal banks and an 8n prefetch architecture. Designed for JEDEC-compliant DDR3(L) systems, it delivers double-data-rate transfers up to DDR3(L)-2133 (1066 MHz clock) for general high-speed memory applications.

Targeted for industrial-grade applications, this surface-mount 78-ball BGA device supports dual supply operation (1.35V and 1.5V) and an extended operating temperature range, providing a balance of performance, configurability and board-level integration.

Key Features

• Memory Core & Organization 1.074 Gbit device organized as 128M × 8 with 8 internal banks and a 1KB page size per bank for efficient burst transfers.
• High-Speed DDR3(L) Interface Double-data-rate operation with differential clock (CK/CK) and differential data strobe (DQS/DQS), supporting DDR3(L)-2133 (1066 MHz clock) data rates.
• Voltage Flexibility Operates from VDD/VDDQ = 1.35V (–0.067V/+0.1V) or VDD/VDDQ = 1.5V (±0.075V) to match system voltage requirements.
• Signal Integrity & Calibration Configurable drive strength (DS), configurable on-die termination (ODT), and ZQ calibration (240 Ω ±1%) for impedance accuracy and improved signal quality.
• Data Integrity & Refresh Auto Refresh and Self Refresh modes with Partial Array Self Refresh (PASR) and Power Down options to maintain data integrity while conserving power.
• Read/Write Training Write leveling and read leveling (via MPR) support system timing alignment for reliable source-synchronous transfers.
• Programmable Timing Flexible timing settings including CAS latency (6–14), CAS write latency (5–10), additive latency options, selectable burst length and burst type for system tuning.
• Performance Metrics Typical access time 13.91 ns and write cycle time (word page) 15 ns for predictable memory timing in system design.
• Package & Grade 78 Ball BGA, surface-mount package rated for industrial operation from –40 °C to 95 °C and RoHS compliant.

Typical Applications

• Industrial Embedded Systems — Industrial-grade temperature rating and JEDEC compliance make it suitable for embedded control and automation memory subsystems.
• Networking & Telecom Equipment — High-rate DDR3(L)-2133 throughput and on-die termination features support buffering and packet processing in communication platforms.
• General High-Speed Memory Subsystems — Use as system or cache memory where double-data-rate transfers and configurable timing are required.

Unique Advantages

• Dual-Voltage Operation: Flexibility to operate at 1.35V or 1.5V simplifies integration across platforms with different power rails.
• JEDEC-Compliant DDR3(L): Industry-standard interface and timing options ease system validation and interoperability.
• Advanced Signal Control: Configurable DS, ODT and ZQ calibration provide precise impedance control for robust signal integrity.
• Programmability for System Tuning: Wide range of CAS latencies, write latencies and burst configurations enable optimization for latency or throughput.
• Industrial Temperature Range: –40 °C to 95 °C rating supports deployment in harsher environmental conditions.
• Compact Surface-Mount Package: 78 Ball BGA footprint enables dense board-level memory integration for space-constrained designs.

Why Choose M15T1G8128A-EFBG2S?

The M15T1G8128A-EFBG2S positions itself as a configurable, JEDEC-compliant DDR3(L) memory device that combines high-speed DDR3(L)-2133 data rates with industrial-grade robustness. Its programmable timing, on-die termination and calibration features make it suitable for system designs that require tunable performance and reliable signal integrity.

This device is well suited to engineers and procurement teams building embedded, networking or industrial platforms that need a compact 1Gb DDR3(L) solution with predictable timing, dual-voltage operation and extended temperature capability.

Request a quote or submit an inquiry to check availability and obtain pricing and lead-time information for the M15T1G8128A-EFBG2S.