M15T2G16128A-EFBG2P

The M15T2G16128A-EFBG2P is a 2Gb DDR3(L) SDRAM device organized as 128M × 16 with an eight-bank architecture. It implements double-data-rate transfers with differential clock and data strobe interfaces and is offered in a 96-ball BGA surface-mount package.

Designed and qualified to JEDEC DDR3(L) specifications, this industrial-grade memory device targets embedded and industrial systems that require high-speed DDR3(L) operation, configurable termination and impedance calibration, and extended temperature support.

Key Features

• Core & Architecture 2.147 Gbit density internally organized as 16M × 16 I/Os × 8 banks with 8n prefetch architecture for DDR3(L) operation.
• Memory Performance Supports double-data-rate transfers with differential CK/CK and DQS/DQS. The EFBG2P ordering variant is rated for 1066 MHz (DDR3(L)-2133) with typical timing option shown as 14-14-14; access time is specified at 13.75 ns and write cycle time (word page) at 15 ns.
• Power & Voltage Dual supply support: SSTL_135 (VDD/VDDQ = 1.35V with tolerance -0.067V/+0.1V) and SSTL_15 (VDD/VDDQ = 1.5V ±0.075V) to accommodate system power options.
• Signal Integrity & Calibration Configurable driver strength (DS) and On-Die Termination (ODT) options; ZQ calibration provided for DS/ODT impedance accuracy via external ZQ pad (240 Ω ±1%).
• Synchronization & Leveling Differential clocking with inputs latched on CK edges and support for write leveling and read leveling (via MPR) for improved timing alignment in system designs.
• Programmable Timing & Functions Multiple programmable CAS latencies, CAS write latencies, additive latency, write recovery time and burst options (BL8/BC4 and on-the-fly BC switching) to match system timing requirements.
• Power Management & Data Integrity Supports Auto Refresh, Self Refresh (normal/extended), Partial Array Self Refresh (PASR), Power Down Mode and Precharge Power Down for power-optimized operation.
• Package & Mounting Pb-free 96-ball BGA package intended for surface-mount assembly, suitable for compact board-level memory implementations.
• Temperature & Qualification Industrial grade device with operating temperature range from -40°C to 95°C and JEDEC qualification.
• Regulatory RoHS compliant.

Typical Applications

• Industrial Systems — Industrial-grade DDR3(L) memory for embedded controllers, instrumentation and other industrial electronics requiring extended temperature operation.
• Embedded Memory Modules — Board-level memory integration where a 96-ball BGA footprint and 2Gb density meet space and capacity constraints.
• High-Speed Data Buffers — Use in systems requiring DDR3(L) double-data-rate transfers and configurable timing and termination for signal integrity.

Unique Advantages

• Flexible Supply Options: Dual-voltage support (1.35V and 1.5V) allows selection of SSTL_135 or SSTL_15 signaling to match system power rails.
• Configurable I/O and Termination: On-die termination and configurable driver strength plus ZQ calibration (240 Ω ±1%) simplify impedance matching and signal integrity tuning.
• Programmable Timing: Wide range of CAS latencies, write latencies and burst configurations enable tuning for diverse performance and latency targets.
• Industrial Temperature Range: Rated from -40°C to 95°C for deployment in temperature-challenging environments.
• JEDEC-Compliant DDR3(L): Standardized interface behavior and timing options support predictable integration into DDR3(L) memory subsystems.
• Compact BGA Package: 96-ball BGA surface-mount package supports high-density PCB designs where board space is constrained.

Why Choose M15T2G16128A-EFBG2P?

The M15T2G16128A-EFBG2P provides a JEDEC-compliant DDR3(L) memory solution that combines 2Gb density, configurable timing and termination, and dual-voltage operation in a compact 96-ball BGA package. Its industrial-grade temperature range and comprehensive power-management features make it suitable for embedded and industrial designs that require reliable, high-speed DRAM.

This device is appropriate for designers who need predictable DDR3(L) behavior with options for timing and signal integrity tuning, and who require a surface-mount BGA memory component qualified for extended temperature operation.

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