M15T2G8256A (2R)

The M15T2G8256A (2R) is a 2.147 Gbit DDR3 SDRAM device from ESMT's DDR3(L) SDRAM series. It implements a 256M × 8 memory organization with a parallel DDR3 interface and JEDEC qualification for standard DDR3 operation.

With a 78‑ball BGA surface‑mount package and an extended operating temperature range to −40 °C to 105 °C, this memory device is provided for designs that specify high-density DDR3 DRAM with defined timing and power characteristics.

Key Features

• Memory Capacity and Organization 2.147 Gbit capacity organized as 256M × 8, providing a predictable density for memory subsystem planning.
• DDR3 Technology & Interface DDR3 SDRAM technology with a parallel memory interface compatible with standard DDR3 signaling and timing.
• Performance Clock frequency rated at 1.066 GHz with an access time of 13.75 ns and a write cycle time (word/page) of 15 ns for deterministic timing considerations.
• Power Specified voltage supply: 1.35 V, supporting low‑voltage DDR3 operation.
• Package & Mounting 78 Ball BGA package in a surface‑mount form factor to support compact PCB layouts and automated assembly.
• Operating Temperature Range Specified operating range from −40 °C to 105 °C to cover extended temperature environments.
• Qualification & Compliance JEDEC qualification is listed for conformance to DDR3 standards; RoHS‑compliant status is provided.
• Memory Type Volatile DRAM memory format for standard system memory applications.

Typical Applications

• Systems specifying 2.147 Gbit DDR3 capacity Designs that require a 256M × 8 DRAM device at 2.147 Gbit density for main or auxiliary memory.
• Designs targeting DDR3 JEDEC profiles Use where JEDEC‑qualified DDR3 SDRAM components are required for predictable interoperability.
• Thermally demanding environments Applications that operate across −40 °C to 105 °C and need memory devices rated for extended temperature ranges.

Unique Advantages

• High-density footprint: 2.147 Gbit capacity in a 78 Ball BGA helps maximize memory per package while supporting compact PCB layouts.
• Deterministic timing parameters: Published access time (13.75 ns) and write cycle time (15 ns) support timing‑sensitive memory subsystem design.
• Low-voltage operation: 1.35 V supply provides compatibility with low‑voltage DDR3 power domains.
• Extended temperature range: Specified operation from −40 °C to 105 °C supports deployment in extended thermal environments.
• Standards alignment: JEDEC qualification and RoHS compliance simplify specification and regulatory review for DDR3 memory selection.

Why Choose M15T2G8256A (2R)?

M15T2G8256A (2R) positions itself as a straightforward, JEDEC‑aligned DDR3 SDRAM option offering 2.147 Gbit density, defined timing (1.066 GHz clock, 13.75 ns access), and a 78 Ball BGA package for space‑constrained PCBs. Its 1.35 V supply and extended −40 °C to 105 °C operating range make it suitable for designs that require a compact, low‑voltage DDR3 memory element with clear, verifiable specifications.

This part is appropriate for engineers and procurement teams specifying DDR3 memory where capacity, timing, package, and extended temperature rating are primary selection criteria.

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