M15T2G8256A-EFBG2D

The M15T2G8256A-EFBG2D from ESMT is a DDR3L volatile DRAM device offering 2.147 Gbit of memory in a 256M x 8 organization. It implements DDR3L technology with a 1.066 GHz clock frequency and supports both 1.35 V and 1.5 V supply levels, delivered in a 78 Ball BGA surface-mount package.

Designed for commercial-grade memory products, the device is JEDEC qualified, RoHS compliant, and operates across a 0 °C to 85 °C temperature range.

Key Features

• Memory Core 2.147 Gbit capacity organized as 256M x 8, implemented as volatile DDR3L DRAM for standard memory applications.
• Performance 1.066 GHz clock frequency with an access time of 13.75 ns and a write cycle time (word/page) of 15 ns to support predictable DRAM timing.
• Power Dual supply support at 1.35 V and 1.5 V, enabling lower-voltage DDR3L operation where applicable.
• Interface & Qualification Parallel memory interface with JEDEC qualification for standard DRAM integration.
• Package & Mounting 78 Ball BGA package in a surface-mount form factor to support compact board layouts.
• Operating Range & Grade Commercial grade device specified for 0 °C to 85 °C operation.
• Environmental Compliance RoHS compliant manufacturing.

Typical Applications

• Commercial embedded systems — System memory in commercial-grade electronic designs that require DDR3L density and JEDEC qualification.
• Consumer electronics — On-board DRAM in consumer devices where a compact BGA footprint and 2Gb capacity are required.
• Memory modules and PCB designs — Component for memory module makers and board designers integrating 256M x 8 DDR3L devices.
• Prototyping and evaluation — Suitable for prototype boards and evaluation platforms operating within the commercial temperature range.

Unique Advantages

• High-density 2Gb capacity: Provides 2.147 Gbit per device in a 256M x 8 organization to maximize memory per footprint.
• Balanced performance: 1.066 GHz clock with 13.75 ns access time and 15 ns write cycle time offers predictable DRAM timing for system designers.
• Dual-voltage flexibility: Support for 1.35 V and 1.5 V operation allows integration into different power architectures.
• Compact, surface-mount package: 78 Ball BGA provides a space-efficient solution for dense PCB layouts.
• Standards-based qualification: JEDEC qualification simplifies system integration with industry-standard DRAM behavior.
• Environmental compliance: RoHS compliance aligns with common environmental requirements.

Why Choose M15T2G8256A-EFBG2D?

The M15T2G8256A-EFBG2D balances capacity, timing, and package density for commercial memory product designs. Its DDR3L architecture with dual-voltage support and JEDEC qualification makes it suitable for designers prioritizing standardized DRAM behavior and compact footprint integration.

Manufactured by ESMT as part of the M15T2G8256A series, this device is positioned for customers building commercial-grade memory modules, boards, and embedded systems that require a reliable 2Gb DDR3L component with defined electrical and thermal specifications.

Request a quote or submit a purchase inquiry to receive pricing and availability for the M15T2G8256A-EFBG2D.