M15T2G8256A-EFBG2R

The M15T2G8256A-EFBG2R is a 2Gb DDR3(L) SDRAM device organized as 256M × 8 with eight internal banks and an 8n prefetch architecture. It implements synchronous double-data-rate signaling with differential clock and data strobe inputs and supports DDR3(L)-2133 data rates (max frequency 1.066 GHz).

Designed for general high-speed memory applications, the device supports both 1.35V and 1.5V power supplies, JEDEC DDR3(L) compliance, and a 78-ball BGA package, making it suitable for compact, performance-focused system designs that require configurable timing and signal integrity controls.

Key Features

• Core Architecture 2Gb DDR3(L) SDRAM organized as 32M × 8 I/Os × 8 banks with 8n prefetch for high-throughput operation.
• Performance Supports DDR3(L)-2133 data rate (up to 2133 Mb/s per pin) with a maximum clock frequency of 1.066 GHz and documented timing options.
• Voltage Options Compatible with SSTL_135 (VDD/VDDQ = 1.35V) and SSTL_15 (VDD/VDDQ = 1.5V) power supplies.
• Signal and I/O Differential CK/CK and DQS/DQS signaling, double-data-rate transfer on DQ/DQS/DM, and configurable data strobe (DS) and on-die termination (ODT).
• Data Integrity & Refresh Auto Refresh and Self Refresh modes with support for Partial Array Self Refresh (PASR) for power-managed retention.
• Power Saving Power Down mode plus PASR and self-refresh options to reduce standby power.
• Calibration & Termination ZQ calibration via an external ZQ pad (240 Ω ±1%) for DS/ODT impedance accuracy and selectable RTT_NOM/RTT_WR values.
• Programmability Multiple programmable timings including CAS Latency (5–14), CAS Write Latency (5–10), additive latency options, burst type/length configuration, and write recovery settings.
• Package & Temperature 78-ball BGA package with operating temperature range of −40°C to 105°C and surface-mount mounting.
• Standards JEDEC DDR3(L) compliant implementation.

Typical Applications

• General-purpose memory subsystems — Acts as high-speed DDR3(L) working memory where up to DDR3(L)-2133 throughput is required.
• Compact BGA-based designs — 78-ball BGA footprint for space-constrained boards requiring synchronous DRAM integration.
• Systems requiring wide temperature operation — Suitable for designs that need operation across −40°C to 105°C.

Unique Advantages

• High throughput capability: Supports DDR3(L)-2133 data rates with a 1.066 GHz clock, enabling high-bandwidth data transfers per pin.
• Dual-voltage flexibility: Operates at 1.35V or 1.5V, allowing integration into systems targeting lower-voltage DDR3(L) or standard DDR3 signaling.
• Signal integrity controls: Configurable drive strength, on-die termination settings and ZQ calibration help tune signaling for system-level margins.
• Extensive timing programmability: Multiple CAS, write latency and burst options support optimization for different memory controller requirements.
• Power management features: Auto refresh, self refresh, PASR and power-down modes provide mechanisms to reduce standby power.
• Compact surface-mount package: 78-ball BGA enables dense PCB layouts while maintaining standardized JEDEC DDR3(L) form-factor compatibility.

Why Choose M15T2G8256A-EFBG2R?

The M15T2G8256A-EFBG2R delivers JEDEC-compliant DDR3(L) performance with flexible voltage support, extensive timing programmability, and signal-integrity features such as ODT and ZQ calibration. Its 78-ball BGA package and wide operating temperature range make it suitable for compact, performance-oriented designs that require configurable memory behavior and reliable high-speed operation.

This device is well suited to designers who need a standardized DDR3(L) memory building block with selectable timing and termination options, offering integration benefits for systems targeting up to DDR3(L)-2133 data rates.

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