M15T4G16256A-BDBG2C
| Part Description |
DDR3L SDRAM 4Gb (256M x 16) 800MHz, 96 Ball BGA |
|---|---|
| Quantity | 653 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 96 Ball BGA | Memory Format | DRAM | Technology | DDR3L | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 13.75 ns | Grade | Industrial | ||
| Clock Frequency | 800 MHz | Voltage | 1.35V, 1.5V | Memory Type | Volatile | ||
| Operating Temperature | -40°C – 95°C | Write Cycle Time Word Page | 15 ns | Packaging | 96 Ball BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 256M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.36 |
Overview of M15T4G16256A-BDBG2C – DDR3L SDRAM 4Gb (256M x 16) 800MHz, 96 Ball BGA
The M15T4G16256A-BDBG2C is a 4Gb DDR3(L) SDRAM device from ESMT configured as 256M × 16 with eight internal banks and an 8n prefetch architecture. It supports DDR3(L)-1600 operation (800 MHz clock) with synchronous double-data-rate transfers and differential clock and data-strobe signaling.
Designed and qualified to JEDEC DDR3(L) specifications and offered in a 96-ball BGA package, this industrial-grade memory device targets systems that require high-speed, JEDEC-compliant DRAM with wide operating temperature and selectable power modes.
Key Features
- Core Architecture 8n prefetch DDR3(L) architecture with differential clock (CK/CK) and data strobe (DQS/DQS) for synchronous, source‑synchronous transfers.
- Memory Organization & Density 4.295 Gbit capacity organized as 256M × 16 across 8 banks; page size per bank is 2 KB as defined in the datasheet.
- Performance 800 MHz clock (DDR3(L)-1600 data rate) with specified access time of 13.75 ns and write cycle time (word page) of 15 ns.
- Voltage & Power Supports SSTL_135 (VDD/VDDQ = 1.35V) and SSTL_15 (VDD/VDDQ = 1.5V), enabling operation at either 1.35 V or 1.5 V depending on system requirements.
- Programmability & Signal Integrity Configurable output driver strength (DS), on-die termination (RTT_NOM and RTT_WR), ZQ calibration via external ZQ pad, and programmable CAS latency and write latencies as defined by the device MR settings.
- Data Integrity & Power Management Supports auto refresh, self refresh (normal/extended), partial array self refresh (PASR), power down modes and precharge power down options for optimized power and data retention.
- System-Level Features Read and write leveling support (MPR and MR settings), differential signaling for timing synchronization, and burst length/type options (BL8/BC4/BC4 or 8 on-the-fly).
- Package & Thermal Surface-mount 96 ball BGA package with industrial operating temperature range of −40 °C to 95 °C.
- Compliance & Environmental JEDEC DDR3(L) compliant and RoHS compliant (Pb‑free).
Typical Applications
- Industrial Systems Industrial-grade temperature range (−40 °C to 95 °C) and JEDEC qualification make this device suitable for industrial control and automation platforms requiring robust DRAM.
- Embedded Platforms Compact 96-ball BGA package and dual-voltage operation (1.35 V / 1.5 V) support space-constrained embedded designs where power flexibility and density matter.
- High-Performance Networking & Communications DDR3(L)-1600 data rate (800 MHz) and advanced signal integrity features support applications that need sustained, high-throughput memory access.
Unique Advantages
- Dual Voltage Flexibility: Operates at 1.35 V or 1.5 V (SSTL_135 / SSTL_15) to match system power rails and optimize power/performance trade-offs.
- JEDEC-Compliant DDR3(L): Adheres to JEDEC DDR3(L) specifications for predictable integration and system-level compatibility.
- Industrial Temperature Range: −40 °C to 95 °C rating supports deployment in harsher thermal environments common to industrial equipment.
- Configurable Signal & Termination Controls: Programmable DS, ODT settings, and ZQ calibration enable system tuning for signal integrity across board layouts.
- Power and Refresh Modes: Built-in auto refresh, self refresh, PASR and power-down options help manage power consumption without sacrificing data integrity.
- High Density in a Compact Package: 4Gb capacity in a 96 ball BGA package provides significant memory density for modern embedded and networking designs.
Why Choose M15T4G16256A-BDBG2C?
The M15T4G16256A-BDBG2C delivers JEDEC-compliant DDR3(L) performance with industrial-grade temperature capability and flexible voltage operation (1.35 V / 1.5 V). Its 4Gb density, 256M × 16 organization, and 8n prefetch architecture provide the throughput and capacity needed for embedded, industrial, and high-throughput systems.
With configurable termination, ZQ calibration, and programmable latencies, this device enables designers to tune signal integrity and timing for specific board and system requirements while benefiting from RoHS compliance and a compact 96-ball BGA package.
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Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
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