M15T4G16256A-DEBG2C
| Part Description |
4Gb DDR3L SDRAM, 256M×16, 933MHz, 96 Ball BGA |
|---|---|
| Quantity | 1,222 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 96 Ball BGA | Memory Format | DRAM | Technology | DDR3L | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 13.75 ns | Grade | Industrial | ||
| Clock Frequency | 933 MHz | Voltage | 1.35V, 1.5V | Memory Type | Volatile | ||
| Operating Temperature | -40°C – 95°C | Write Cycle Time Word Page | 15 ns | Packaging | 96 Ball BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 256M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.36 |
Overview of M15T4G16256A-DEBG2C – 4Gb DDR3L SDRAM, 256M×16, 933MHz, 96 Ball BGA
The M15T4G16256A-DEBG2C from ESMT is a 4Gb DDR3(L) SDRAM device organized as 256M×16 with eight internal banks. It implements a double-data-rate architecture and synchronous interface to deliver high throughput for industrial and general high-speed memory applications.
This device supports dual voltage operation (1.35V and 1.5V), JEDEC DDR3(L) compliance, and an extended industrial operating range, making it suitable for embedded and industrial systems that require configurable timing, signal integrity features, and surface-mount BGA packaging.
Key Features
- Memory Core & Organization 4.295 Gbit capacity organized as 32M×16 I/Os×8 banks (256M×16 logical organization) with a 2KB page size per bank.
- Performance Operates at a 933 MHz clock (DDR3(L)-1866 / 1866 Mb/sec per pin) with 8n prefetch architecture and double-data-rate transfers on DQ, DQS and DM.
- Interface & Signal Differential clock (CK/CK) and data strobe (DQS/DQS) for source-synchronous transfers, programmable drive strength (DS), and configurable On-Die Termination (ODT) for system compatibility.
- Voltage & Power Supports SSTL_135 (VDD/VDDQ = 1.35V) and SSTL_15 (VDD/VDDQ = 1.5V) power rails, with Auto Refresh, Self Refresh, Partial Array Self Refresh (PASR), and Power Down modes for power management.
- Timing & Programmability Wide range of programmable CAS Latency (5–16), CAS Write Latency (5–12), additive latency options, write recovery times, burst length/type and on-the-fly BC/BL switching.
- Calibration & Signal Integrity ZQ calibration via external ZQ pad (240 Ω ±1%) and support for write/read leveling features to aid reliable interface timing and impedance accuracy.
- Package & Environmental Pb‑free 96 ball BGA surface-mount package, industrial grade, JEDEC qualified, RoHS compliant, and rated for operation from −40°C to 95°C.
- Latency & Access Typical access time 13.75 ns and write cycle time (word page) of 15 ns for predictable memory timing characteristics.
Typical Applications
- Industrial Embedded Systems — Industrial-grade temperature range and JEDEC compliance make the device suitable for embedded controllers and edge computing modules used in industrial environments.
- High-Speed Memory Subsystems — DDR3(L)-1866 data rates and 8n prefetch architecture support general high-throughput memory tasks in systems that require fast sequential and random access.
- Board-Level Memory Expansion — 96 ball BGA surface-mount package and 256M×16 organization provide a compact footprint for board-level memory expansion in space-constrained designs.
Unique Advantages
- Dual Voltage Flexibility: Supports both 1.35V and 1.5V operation (SSTL_135 and SSTL_15), enabling compatibility with systems using either DDR3L or legacy DDR3 voltage rails.
- Configurable Timing and Termination: Extensive CAS, write recovery and ODT settings allow designers to tune performance and signal integrity for varied system requirements.
- Signal Calibration and Reliability: ZQ calibration and read/write leveling features improve impedance accuracy and timing robustness across PCB and system variations.
- Industrial Temperature Range: Rated from −40°C to 95°C, providing suitability for harsh-environment deployments where extended temperature operation is required.
- Compact Surface-Mount Packaging: 96 ball BGA package enables dense, board-level integration while maintaining Pb‑free, RoHS-compliant construction.
Why Choose M15T4G16256A-DEBG2C?
The M15T4G16256A-DEBG2C positions itself as a configurable, industrial-grade DDR3(L) memory building block that balances high data throughput and system-level signal integrity features. With JEDEC compliance, dual-voltage support, programmable timing, and calibration capabilities, it is well-suited for designers seeking a reliable 4Gb DDR3(L) solution for embedded and industrial applications.
Its 96 ball BGA surface-mount package and extended temperature rating deliver integration flexibility and robustness for production systems, while the programmable drive strength, ODT and timing options simplify tuning across different board and system environments.
If you would like pricing, availability, or to request a quote for production quantities or samples, submit an inquiry to our sales team and include your required quantities and delivery timeline.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
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