M15T4G16256A-EFBG2P

The M15T4G16256A-EFBG2P is a 4.295 Gbit DDR3L SDRAM organized as 256M × 16, delivering DDR3(L)-2133 data rates with a 1066 MHz clock. It implements DDR3L architecture with an 8n-bit prefetch and 8 internal banks to support high-throughput parallel memory operation.

Designed and qualified to JEDEC specifications and offered in a 96-ball BGA surface-mount package, this device is targeted at industrial-grade memory applications where low-voltage operation, programmable timing flexibility, and extended temperature range are required.

Key Features

• Memory Core & Organization — 4.295 Gbit capacity organized as 256M × 16 with 8 internal banks and a 2 KB page size.
• Performance — Maximum clock frequency 1.066 GHz (DDR3(L)-2133) with typical timing example (14-14-14) and access time listed at 13.91 ns.
• Low-Voltage Operation — Nominal VDD = VDDQ = 1.35 V (1.283–1.45 V) with backward compatibility to 1.5 V operation.
• Data Path & Timing Flexibility — Differential bidirectional data strobe, differential clock inputs (CK/CK#), programmable CAS (READ) latency, programmable posted CAS additive latency (AL), and programmable CAS (WRITE) latency (CWL).
• Signal Integrity & Calibration — Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals; output driver calibration and write leveling supported.
• Burst and Access Modes — Fixed BL8 with optional burst chop BC4 selectable on-the-fly; supports self refresh, self refresh temperature (SRT), and automatic self refresh (ASR).
• Package & Mounting — 96-ball BGA, surface mount package suitable for compact board-level integration.
• Industrial Grade & Environmental — JEDEC-qualified device, RoHS compliant and Pb-free; operating temperature range −40 °C to 95 °C.
• Parallel Interface — Standard DDR3(L) parallel memory interface with address and bank control inputs (A, BA) and comprehensive command set.

Typical Applications

• Industrial and Embedded Systems — JEDEC-qualified DDR3L memory for board-level designs requiring operation across −40 °C to 95 °C.
• Low-Voltage Memory Designs — Systems that require 1.35 V DDR3L operation with backward 1.5 V compatibility for mixed-voltage environments.
• Surface-Mount Module Integration — Use as on-board DRAM in compact, surface-mount assemblies leveraging the 96-ball BGA package.

Unique Advantages

• Low-Voltage Efficiency: Native 1.35 V operation reduces core power draw while retaining compatibility with 1.5 V systems.
• High Data Rate: Supports DDR3(L)-2133 (1066 MHz) operation for applications needing higher throughput within DDR3 class performance.
• Industrial Temperature Range: −40 °C to 95 °C rating enables deployment in harsh and temperature-variable environments.
• Flexible Latency and Control: Programmable CL, AL and CWL plus on-the-fly burst mode selection supports tuning for application-specific timing and throughput.
• Signal Integrity and Reliability Features: On-die termination, write leveling, and output driver calibration help simplify board design and improve signal robustness.
• JEDEC-Qualified and RoHS Compliant: Meets industry memory standards and environmental compliance for broad deployment.

Why Choose M15T4G16256A-EFBG2P?

The M15T4G16256A-EFBG2P combines DDR3L low-voltage operation, JEDEC qualification, and industrial temperature capability into a compact 96-ball BGA package. Its 256M × 16 organization, 8-bank architecture, and programmable timing features provide designers with flexible on-board memory suitable for demanding embedded and industrial applications.

For designs that require a verified DDR3L memory component with on-die termination, write leveling, selectable burst modes, and support for both 1.35 V and 1.5 V operation, this device offers a practical, specification-driven choice backed by ESMT documentation and JEDEC compliance.

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