M15T4G8512A-BDBG2C

The M15T4G8512A-BDBG2C is a 4Gb DDR3(L) SDRAM device organized as 512M x 8 with an eight-bank architecture and 8n prefetch. It implements a double-data-rate transfer scheme with differential clock and data-strobe signaling to support high-speed synchronous operation.

Designed and manufactured by ESMT with JEDEC-compliant DDR3(L) functionality, this device supports both 1.35V and 1.5V supplies and an industrial operating temperature range of -40°C to 95°C, making it suitable for systems that require robust, high-performance DRAM in a compact BGA package.

Key Features

• Core & Architecture — 8n prefetch architecture with eight internal banks and source-synchronous DQS/DQS for DDR operation.
• Memory Density & Organization — 4.295 Gbit total capacity organized as 512M × 8 I/Os per device.
• Performance — Clock frequency 800 MHz (DDR3(L)-1600 data rate) with typical access time of 13.75 ns and write cycle time (word/page) of 15 ns.
• Voltage Options — Supports SSTL_135 (VDD/VDDQ = 1.35V) and SSTL_15 (VDD/VDDQ = 1.5V) for flexible system power architectures.
• Power Management — Auto Refresh and Self Refresh modes, Partial Array Self Refresh (PASR), and Power Down mode for power-efficient operation.
• Signal Integrity & Calibration — Configurable drive strength (DS), configurable On-Die Termination (ODT), and ZQ calibration (external ZQ pad) for impedance accuracy.
• Leveling & Synchronization — Write leveling (via MR settings) and read leveling (via MPR) to assist memory interface timing alignment.
• Programmability — Wide range of programmable timing and operational parameters including multiple CAS latencies, CAS write latencies, additive latency options, burst lengths and types, and configurable RTT_NOM/RTT_WR values.
• Package & Mounting — 78-ball BGA package, surface-mount device.
• Industrial Grade & Compliance — Industrial grade with JEDEC qualification and RoHS compliance; operating temperature range -40°C to 95°C.

Unique Advantages

• Flexible supply support: Dual VDD/VDDQ options (1.35V and 1.5V) allow integration into systems with different power rails.
• Industrial temperature range: Rated for -40°C to 95°C, enabling deployment in thermally demanding environments.
• Comprehensive signal control: Configurable DS/ODT and ZQ calibration help maintain signal integrity across system board designs.
• Robust timing flexibility: Programmable CAS and write latencies, additive latency and burst settings allow tuning for system performance and compatibility.
• Compact BGA footprint: 78-ball BGA surface-mount package reduces PCB area while supporting high-density memory integration.
• Power-saving modes: PASR, self refresh and power-down options reduce standby power for energy-conscious designs.

Why Choose M15T4G8512A-BDBG2C?

The M15T4G8512A-BDBG2C delivers a balanced combination of DDR3(L) performance, flexible voltage operation and industrial temperature capability in a compact 78-ball BGA. Its JEDEC-compliant feature set—including programmable timing, on-die termination, ZQ calibration and leveling support—provides the control needed to integrate reliable high-speed DRAM into industrial and embedded systems.

This device is appropriate for designs that require a verified DDR3(L) memory building block with configurable timing and signal integrity features, as well as the environmental tolerance expected in industrial-grade components.

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