M15T4G16256A-EFBG2S

The M15T4G16256A-EFBG2S is a 4Gb DDR3(L) SDRAM organized as 256M×16 with an internal eight-bank architecture and an 8n prefetch. It provides double-data-rate operation with a 1.066 GHz clock frequency and a DDR3(L)-2133 data-rate option (14-14-14 timing) for high-bandwidth memory applications.

Designed for board-level integration in surface-mount assemblies, this device supports dual supply options (1.35V and 1.5V), JEDEC DDR3(L) compliance, configurable on-die termination and impedance calibration, and an extended operating temperature range of -40°C to 105°C.

Key Features

• Memory Organization 4.295 Gbit capacity organized as 256M×16 with eight internal banks and a 2KB page size per bank.
• High-speed DDR3(L) Architecture 8n prefetch architecture with double-data-rate transfers on DQ, DQS and DM. Ordering info specifies a 1.066 GHz clock and DDR3(L)-2133 (14-14-14) data-rate for this part number.
• Voltage Flexibility Supports SSTL_135 and SSTL_15 operation with VDD/VDDQ = 1.35V (−0.067V/+0.1V) or 1.5V (±0.075V).
• Timing and Performance Access time listed at 13.75 ns with a write cycle time (word page) of 15 ns. Programmable CAS and write latencies and additive latency options are provided for timing customization.
• Signal and Data Integrity Differential clock (CK/CK) and differential data strobe (DQS/DQS) with configurable on-die termination (RTT_NOM/RTT_WR), configurable drive strength (DS), and ZQ calibration for impedance accuracy.
• Power-saving and Refresh Supports Auto Refresh, Self Refresh, Partial Array Self Refresh (PASR) and Power-Down modes to reduce power during idle conditions.
• Read/Write Training Read leveling via MPR and write leveling via mode register settings to aid system timing alignment.
• Package and Mounting Delivered in a 96-ball BGA package for surface-mount assembly, suitable for compact board designs.
• Operating Range and Compliance Rated for operation from -40°C to 105°C and specified as JEDEC DDR3(L) compliant in the datasheet.

Typical Applications

• System memory modules Use as board-level DDR3(L) DRAM in designs requiring 4Gb density in a 256M×16 organization and DDR3(L)-2133 performance.
• Embedded memory subsystems Integration in compact, surface-mount memory subsystems where a 96-ball BGA package and dual voltage operation are required.
• High-temperature environments Deployment in systems that require extended operating temperature capability (−40°C to 105°C).

Unique Advantages

• Dual-voltage support: Enables operation at 1.35V or 1.5V for design flexibility and system compatibility.
• JEDEC DDR3(L) compliance: Ensures standard DDR3(L) control, timing and interface behavior as documented in the datasheet.
• Configurable signal conditioning: On-die termination, configurable drive strength and ZQ calibration simplify signal integrity tuning on modern PCBs.
• Programmable timing options: Wide range of CAS and write latencies plus additive latency and burst configuration for timing optimization.
• Compact BGA package: 96-ball BGA offers a space-efficient footprint for high-density board designs.
• Extended temperature rating: -40°C to 105°C operation supports deployment where temperature resilience is required.

Why Choose M15T4G16256A-EFBG2S?

The M15T4G16256A-EFBG2S delivers a 4Gb DDR3(L) SDRAM option with flexible voltage operation, JEDEC-compliant DDR3(L) behavior, and extensive timing programmability. Its 256M×16 organization, 8-bank architecture and DDR3(L)-2133 timing make it suited to designs that need standardized, high-bandwidth DRAM in a compact BGA package.

With configurable on-die termination, ZQ calibration and leveling features, this device supports system-level signal integrity and timing calibration needs. The -40°C to 105°C operating range and surface-mount 96-ball BGA package enable deployment in thermally demanding and space-constrained board designs.

Request a quote or submit an RFQ to evaluate M15T4G16256A-EFBG2S for your next memory design.