M15T4G16256A-EFBG2C

The M15T4G16256A-EFBG2C is a 4.295 Gbit DDR3(L) SDRAM device organized as 256M×16 with an eight-bank architecture and 8n prefetch. It supports dual supply operation (1.35V SSTL_135 and 1.5V SSTL_15) and synchronous, differential clocking for source-synchronous high-speed data transfers.

Designed for industrial-grade applications, this JEDEC-compliant device delivers up to a 1.066 GHz clock (DDR3(L)-2133, timing example 14-14-14) in a compact 96-ball BGA package and operates across a wide temperature range of -40°C to 95°C.

Key Features

• Memory Core & Organization 4.295 Gbit capacity arranged as 256M×16 with 8 internal banks and a 2 KB page size per bank for efficient page accesses.
• High-Speed DDR3(L) Architecture 8n prefetch architecture with double-data-rate operation on DQ, DQS and DM using differential CK/CK and DQS/DQS pairs; rated for DDR3(L)-2133 operation at a 1.066 GHz clock.
• Dual Voltage Support SSTL_135 (VDD/VDDQ = 1.35V) and SSTL_15 (VDD/VDDQ = 1.5V) operation for system flexibility.
• Programmable Timing and Modes Configurable CAS latency (5–16), CAS write latency (5–12), additive latency options, burst length/type control and programmable write recovery times to match system timing requirements.
• Signal Integrity & Calibration Configurable output driver strength (DS) and on-die termination (RTT_Nom and RTT_WR), plus ZQ calibration (240 Ω ±1%) for impedance accuracy.
• Power Management & Data Integrity Auto refresh, self refresh (normal/extended), partial array self refresh (PASR), power-down modes and precharge power-down options to manage power and refresh behavior.
• Package & Mounting 96-ball BGA package, surface-mount mounting optimized for high-density board layouts.
• Industrial Temperature & Compliance Industrial operating range of -40°C to 95°C and JEDEC DDR3(L) compliance; RoHS compliant.

Typical Applications

• Industrial Embedded Systems High-density DDR3(L) memory for industrial controllers and compute modules that require extended temperature operation and JEDEC-compliant DRAM.
• General High-Speed Memory Expansion System memory expansion where a compact 96-ball BGA footprint and dual-voltage DDR3(L) operation are required for compatibility across platforms.
• Synchronous Data Buffering Use as high-speed volatile storage for buffering and working memory in systems that leverage differential clocking and source-synchronous DQS for data integrity.

Unique Advantages

• Dual-Voltage Flexibility: Operates at 1.35V or 1.5V (SSTL_135 / SSTL_15) to support different system power rails and design requirements.
• JEDEC Compliance: Standardized DDR3(L) behavior and timing definitions simplify integration and validation in JEDEC-based designs.
• Wide Temperature Range: Industrial-grade operation from -40°C to 95°C supports deployment in temperature-demanding environments.
• Signal and Impedance Control: Configurable on-die termination and ZQ calibration (240 Ω ±1%) enable improved signal integrity and predictable timing margins.
• Compact System Integration: 96-ball BGA package provides a high-density footprint suitable for space-constrained PCBs.
• Power and Refresh Modes: Multiple power-saving and refresh modes (self refresh, PASR, power down) give control over energy use in deployed systems.

Why Choose M15T4G16256A-EFBG2C?

The M15T4G16256A-EFBG2C positions itself as a robust DDR3(L) memory solution that combines high-speed, JEDEC-compliant performance with industrial-grade temperature tolerance and dual-voltage operation. Its 256M×16 organization, programmable timing options and signal-integrity features make it suitable for designs that require predictable DDR3(L) behavior and compact BGA packaging.

This device is well suited for engineers and procurement teams specifying standardized DDR3(L) memory for embedded and industrial systems where validated timing modes, on-die termination control and thermal resilience are required over the product lifecycle.

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