M15T4G16256A-DEBG2P

The M15T4G16256A-DEBG2P from ESMT is a 4.295 Gbit DDR3L SDRAM organized as 256M × 16, specified for DDR3(L)-1866 operation with a 933 MHz clock. It implements an 8n-bit prefetch architecture with differential clock and bidirectional data strobe signaling, delivering a standard DDR3 interface in a low-voltage DDR3L form factor.

Designed and qualified to JEDEC specifications and offered in a Pb‑free 96‑ball BGA package, this device targets industrial-grade applications that require high-density, low-voltage DRAM with extended operating temperature capability.

Key Features

• Memory Core & Organization 4.295 Gbit density arranged as 256M × 16 with 8 internal banks and a 2 KB page size (per device addressing).
• Performance & Timing Supports DDR3(L)-1866 data rate (13-13-13 timing listed for the 933 MHz variant). Access time 13.91 ns and write cycle time (word page) 15 ns.
• Low-Voltage Operation VDD = VDDQ = 1.35 V (range 1.283–1.45 V) with backward compatibility to 1.5 V operation.
• Signal & Interface Differential clock inputs (CK/CK#) and differential bidirectional data strobe. Parallel memory interface compatible with standard DDR3 signaling.
• Memory Controls & Programmability Programmable CAS (READ) latency, programmable posted CAS additive latency (AL), and programmable CAS (WRITE) latency (CWL). Fixed BL8 with BC4 selectable on-the-fly via mode register.
• System Reliability & Management On-die termination (nominal and dynamic), self-refresh modes including automatic self-refresh and self-refresh temperature (SRT), write leveling, multipurpose register, and output driver calibration.
• Package & Temperature Range Surface-mount 96 Ball BGA, Pb‑free, industrial grade operation from −40 °C to 95 °C.
• Standards & Compliance JEDEC qualified and RoHS compliant.

Typical Applications

• Industrial embedded systems — Industrial-grade temperature range (−40 °C to 95 °C) and JEDEC qualification make the device suitable for rugged embedded controllers and instrumentation.
• Low-voltage memory designs — 1.35 V DDR3L operation with 1.5 V backward compatibility supports systems prioritizing reduced power consumption and compatibility with legacy DDR3 rails.
• High-density DRAM implementations — 4.295 Gbit density in a 96‑ball BGA package for compact, high-capacity memory assemblies.

Unique Advantages

• Low-voltage operation — Native 1.35 V VDD/VDDQ with backward compatibility to 1.5 V reduces system power draw while maintaining DDR3 compatibility.
• Flexible timing and burst control — Programmable CL, AL and CWL plus on‑the‑fly selection of BC4 or BL8 allow designers to tune performance for specific workloads.
• Integrated signal management — Differential clocks, bidirectional data strobe, on‑die termination and output driver calibration simplify signal integrity and timing across high-speed interfaces.
• Robust thermal range — Industrial temperature rating (−40 °C to 95 °C) supports deployment in demanding environments.
• Standards-based reliability — JEDEC qualification and built-in self-refresh modes contribute to predictable behavior and long-term system reliability.
• Compact, lead‑free package — 96 Ball BGA in a Pb‑free format enables high-density board layouts with environmental compliance.

Why Choose M15T4G16256A-DEBG2P?

The M15T4G16256A-DEBG2P provides a high-density DDR3L memory option with low-voltage operation, programmable timing, and integrated signal and power management features. Its combination of 4.295 Gbit capacity, 256M × 16 organization, and JEDEC qualification positions it for industrial and embedded designs that require reliable, compact DRAM in challenging thermal environments.

Engineers seeking a DDR3(L)-1866 (933 MHz) 96‑ball BGA device with on-die termination, self-refresh capabilities, and Pb‑free packaging will find a well-specified component in this ESMT part that supports both low-voltage and legacy 1.5 V operation.

Request a quote or submit an inquiry to obtain pricing, availability, and support for M15T4G16256A-DEBG2P for your next design.