M15T4G16256A (2S)

The M15T4G16256A (2S) is a 4.295 Gbit DDR3(L) SDRAM device organized as 32M × 16 I/Os × 8 banks. It implements double-data-rate architecture with differential clocking and source-synchronous DQS signaling to deliver high-speed memory transfers for general applications.

Designed for board-level surface-mount integration, the device supports dual supply options (1.35V and 1.5V), JEDEC DDR3(L) compliance, and a compact 96-ball BGA package for space-efficient high-density memory designs.

Key Features

• Core & Architecture  8n prefetch DDR3(L) architecture with differential clock (CK/CK) and differential data strobe (DQS/DQS) for source-synchronous transfers.
• Memory Organization & Density  4.295 Gbit total organized as 256M × 16 (32M × 16 × 8 banks), providing a 2KB page size per bank as defined by the internal configuration.
• Performance  Clock frequency specified at 1.066 GHz with documented access time of 13.75 ns and write cycle time (word/page) of 15 ns.
• Voltage & Power  Supports SSTL_135 (VDD/VDDQ = 1.35V) and SSTL_15 (VDD/VDDQ = 1.5V) supply options; includes power saving modes such as auto refresh, self refresh, partial array self refresh (PASR), and power-down mode.
• Signal Integrity & Calibration  Configurable drive strength (DS), on-die termination (RTT_Nom and RTT_WR) and ZQ calibration via an external ZQ pad (240 Ω ±1%) for impedance accuracy.
• Timing & Programmability  Programmable CAS latency options (5–16), CAS write latency options (5–12), additive latency choices, selectable burst types/lengths, and write/read leveling support via MR and MPR.
• Reliability & Standards  JEDEC DDR3(L) compliant with features for data integrity including auto refresh and self refresh modes.
• Package & Temperature  Surface-mount 96 Ball BGA package; operating temperature range 0°C to 85°C. RoHS compliant.

Typical Applications

• General-purpose high-speed memory  Use as system memory for applications requiring DDR3(L) double-data-rate transfers and JEDEC-compliant behavior.
• Board-level BGA memory integration  Compact 96-ball BGA and surface-mount mounting support space-constrained PCB designs that require high-density DRAM.
• Power-sensitive designs  Dual-voltage support (1.35V/1.5V) plus power-saving modes (PASR, self refresh, power down) for designs where power management is required.

Unique Advantages

• Dual supply flexibility: Operates at 1.35V or 1.5V (SSTL_135 / SSTL_15), enabling compatibility with systems targeting either DDR3(L) voltage.
• Rich timing programmability: Wide range of CAS and write-latency settings and burst options allow tuning for system timing and performance trade-offs.
• Signal integrity controls: Configurable output driver impedance, on-die termination options and ZQ calibration help maintain consistent signal performance.
• Compact, ready-to-mount package: 96 Ball BGA surface-mount package supports high-density board layouts while simplifying assembly.
• JEDEC-compliant DDR3(L): Compliance with DDR3(L) standard behavior and refresh mechanisms supports predictable integration into JEDEC-based memory subsystems.
• Regulatory compliance: RoHS-compliant construction supports environmental requirements for lead-free manufacturing.

Why Choose M15T4G16256A (2S)?

The M15T4G16256A (2S) provides a JEDEC-compliant DDR3(L) memory building block that combines 4.295 Gbit density, flexible voltage operation (1.35V/1.5V), and a compact 96-ball BGA footprint. Its programmable timing, configurable signal integrity options and refresh/power-saving modes make it suitable for designers needing predictable DDR3(L) behavior and board-level integration.

This device is well suited to designs that require a balance of performance, configurability and compact packaging, and it delivers verifiable characteristics—clock frequency 1.066 GHz, access time 13.75 ns, and industry-standard JEDEC feature set—backed by RoHS compliance and surface-mount availability.

Request a quote or submit an inquiry today to specify M15T4G16256A (2S) for your next memory design or production program.