M15T4G16256A (2P)

The M15T4G16256A (2P) is a DDR3(L) SDRAM device from ESMT providing 4.295 Gbit of volatile DRAM in a 256M × 16 organization. It implements an 8n-bit prefetch architecture with 8 internal banks and is available in a 96‑ball BGA surface‑mount package.

Designed for systems requiring DDR3(L) memory at high data rates, the device supports low‑voltage operation (VDD = 1.35V; 1.283–1.45V) while remaining backward‑compatible with 1.5V operation. Typical electrical performance includes a 1.066 GHz clock (DDR3(L)‑2133 data rate, CL‑tRCD‑tRP = 14‑14‑14 in the 1066 MHz variant).

Key Features

• Memory Capacity & Organization — 4.295 Gbit total capacity implemented as 256M × 16 with 8 internal banks and a 2KB page size.
• DDR3(L) Architecture — 8n‑bit prefetch, fixed burst length BL8 with burst chop BC4 and on‑the‑fly BC4/BL8 selection via the mode register.
• Low‑Voltage & Backward Compatibility — Nominal VDD = 1.35V (operating range 1.283–1.45V) and backward‑compatible to VDD = 1.5V ±0.075V for flexible system integration.
• High Data Rate — Supports a 1.066 GHz clock frequency (DDR3(L)‑2133, 14‑14‑14 timing for the 1066 MHz part number).
• Programmable Timing — Programmable CAS (READ) latency (CL), posted CAS additive latency (AL), and CAS (WRITE) latency (CWL) to match system timing requirements.
• Signal & Training Support — Differential clock inputs (CK/CK#), differential bidirectional data strobe, write leveling, and output driver calibration for robust signal integrity.
• On‑Die Termination — Nominal and dynamic ODT for data, strobe, and mask signals to simplify board termination.
• Power & Self‑Refresh Features — Self refresh, automatic self refresh (ASR), and self refresh temperature (SRT) support for low‑power standby operation.
• Package & Mounting — 96 Ball BGA package, surface mount mounting type suitable for board‑level integration.
• Commercial Grade & Compliance — JEDEC qualification with RoHS compliance; operating temperature 0°C to 85°C.

Typical Applications

• System Memory in Embedded Designs — Use where a 4.295 Gbit DDR3(L) device in a compact 96‑ball BGA is required for board‑level memory expansion.
• Commercial Electronics — Low‑voltage 1.35V operation and backward compatibility to 1.5V support migration between power‑sensitive and legacy platforms.
• High‑Bandwidth Interfaces — 1.066 GHz clocking and programmable timing (CL/AL/CWL) enable integration into high‑data‑rate memory subsystems.
• Compact PCB Layouts — Surface‑mount BGA package and integrated ODT/write leveling simplify routing and termination in dense designs.

Unique Advantages

• Low‑Voltage Flexibility: Native 1.35V operation with 1.283–1.45V range lowers supply requirements while offering backward compatibility to 1.5V systems.
• High‑Rate DDR3(L) Performance: 1.066 GHz clocking (DDR3(L)‑2133) with programmable timing options supports demanding throughput requirements.
• On‑Die Conditioning & Training: Built‑in ODT, write leveling and output driver calibration reduce external BOM and improve signal integrity.
• Power‑Saving Self‑Refresh: Self refresh, ASR and SRT support help manage standby power in energy‑sensitive designs.
• Board‑Friendly Package: 96 Ball BGA surface‑mount package enables compact integration on modern PCBs.
• Standards & Environmental Compliance: JEDEC qualification and RoHS compliance support standardized system design and regulatory needs.

Why Choose M15T4G16256A (2P)?

The M15T4G16256A (2P) provides a compact, JEDEC‑qualified DDR3(L) memory solution delivering 4.295 Gbit capacity with low‑voltage operation and backward compatibility to 1.5V. Its combination of high data‑rate capability (1.066 GHz clock), programmable timings, on‑die termination and training features make it suitable for designs that require predictable timing behavior and simplified board termination.

This device is positioned for commercial designs requiring a reliable, standards‑based DDR3(L) DRAM in a 96‑ball BGA package with an operating range of 0°C to 85°C. It offers scalable integration for systems migrating between 1.35V and 1.5V memory ecosystems while maintaining JEDEC compliance and RoHS status.

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