M15T4G16256A-BDBG2S

The M15T4G16256A-BDBG2S is a 4Gb DDR3(L) SDRAM device organized as 256M×16 with an eight-bank architecture and 8n prefetch. It implements double-data-rate transfers with differential clocking and source-synchronous DQS to support high-speed memory interfaces.

Designed for general high-speed memory applications, this JEDEC-compliant DDR3(L) part supports both 1.35V and 1.5V operation, a DDR3(L)-1600 data rate (800 MHz clock), and an extended operating temperature range to address designs requiring low-voltage operation and wide thermal margins.

Key Features

• Core & Memory Organization 4.295 Gbit density organized as 256M×16 with 8 internal banks and a page size of 2KB per bank.
• Performance 800 MHz clock frequency delivering DDR3(L)-1600 (11-11-11) data rate; access time 13.75 ns and write cycle time (word/page) 15 ns.
• Low-Voltage Support Dual supply support: SSTL_135 (VDD/VDDQ = 1.35V) and SSTL_15 (VDD/VDDQ = 1.5V) for flexible power designs.
• Signal & Interface Differential clock (CK/CK) and differential data strobes (DQS/DQS) with double-data-rate transfers on DQ, DQS and DM for reliable high-speed signaling.
• Data Integrity & Power Management Auto Refresh and Self Refresh, Partial Array Self Refresh (PASR) and Power Down mode to manage power and data retention.
• Signal Integrity & Calibration Configurable drive strengths (DS), configurable on-die termination (ODT) and ZQ calibration (external ZQ pad, 240Ω ±1%) for impedance accuracy.
• Leveling & Programmability Write leveling and read leveling support; programmable CAS latency, CAS write latency, additive latency, write recovery time, burst type/length and a range of on-die termination options.
• Package & Mounting Surface-mount 96 Ball BGA package suitable for compact PCB integration.
• Qualification & Temperature JEDEC-compliant DDR3(L) device rated for an operating temperature range of −40°C to 105°C.

Typical Applications

• General high-speed memory systems — Provides DDR3(L)-1600 bandwidth for systems requiring fast, parallel memory interfaces.
• Low-voltage designs — Dual 1.35V / 1.5V supply support enables integration in power-sensitive platforms.
• Thermally demanding environments — Specified for −40°C to 105°C operation to support designs with extended temperature requirements.

Unique Advantages

• Flexible voltage operation — Supports both 1.35V and 1.5V supplies to match system power architectures and reduce board-level complexity.
• Comprehensive signal conditioning — Configurable DS, ODT and ZQ calibration improve signal integrity across a range of PCB layouts.
• Advanced timing programmability — Wide selection of CAS and write latencies, additive latency and write recovery settings enable tuning for system timing margins.
• Compact BGA footprint — 96 Ball BGA surface-mount package conserves PCB area while enabling dense memory integration.
• JEDEC compliance — Standardized DDR3(L) feature set and command/clock behavior simplify system-level integration.

Why Choose M15T4G16256A-BDBG2S?

The M15T4G16256A-BDBG2S positions itself as a versatile DDR3(L) memory device combining 4Gb density, 256M×16 organization and an 8-bank architecture to deliver DDR3(L)-1600 performance at an 800 MHz clock. Its dual-voltage support, extensive programmability and signal integrity features make it suitable for designers who need configurable timing, reliable high-speed interfaces and compact package integration.

This device is appropriate for engineers and procurement teams targeting JEDEC-compliant DDR3(L) memory for systems that require low-voltage operation, programmable timing options and operation across a wide temperature range.

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