M15T4G16256A-DEBG2S

The M15T4G16256A-DEBG2S is a 4Gb DDR3(L) SDRAM device organized as 256M × 16 with eight internal banks and a parallel memory interface. Designed to support DDR3(L)-1866 operation (device speed grade: 933 MHz, DDR3(L)-1866, 13-13-13), it provides synchronous double-data-rate transfers with differential clock and data strobe signaling.

This device targets general high-speed memory applications that require JEDEC DDR3(L) compliant features, low-voltage operation options (1.35V and 1.5V), and a compact 96‑ball BGA package suitable for surface-mount assembly.

Key Features

• Memory Organization — 4 Gb capacity (4.295 Gbit) organized as 256M × 16 with 8 internal banks for parallel access and efficient page transfers.
• Performance — Device speed grade supports 933 MHz clock (DDR3(L)-1866 data rate, 13-13-13 timing). Specified access time: 13.75 ns; write cycle time (word page): 15 ns.
• DDR3(L) Architecture — JEDEC DDR3(L) compliant with 8n prefetch architecture, differential clock (CK/CK) and DQS/DQS data strobes, and double-data-rate transfers on DQ/DQS/DM.
• Power — Dual supply support: SSTL_135 (VDD/VDDQ = 1.35V) and SSTL_15 (VDD/VDDQ = 1.5V) to match system voltage requirements and enable low-voltage operation.
• Power Management — Supports Auto Refresh, Self Refresh, Partial Array Self Refresh (PASR), and Power Down modes to reduce standby power.
• Signal Integrity — Configurable driver strength (DS), programmable On-Die Termination (RTT_Nom, RTT_WR), ZQ calibration via external ZQ pad (240 Ω ±1%) for impedance accuracy, and write/read leveling features.
• Programmability — Multiple programmable timing and operation options including CAS latency selections (CL 5–16), CAS write latency, additive latency, burst length and type, and write recovery time settings.
• Package & Mounting — 96 Ball BGA (surface mount) package providing compact footprint integration for board-level designs.
• Operating Range — Specified operating temperature range: -40 °C to 105 °C; RoHS compliant.

Typical Applications

• General high-speed system memory — DDR3(L) memory for systems requiring a 4Gb memory device with up to DDR3(L)-1866 data rates.
• Embedded and compact platforms — Surface-mount 96‑ball BGA package suited for space-constrained board designs needing synchronous SDRAM.
• Power-sensitive designs — Systems that can benefit from 1.35V low-voltage operation and supported power-saving modes such as Self Refresh and Power Down.

Unique Advantages

• Flexible voltage support — Dual VDD/VDDQ operation at 1.35V and 1.5V enables compatibility with both standard and low-voltage system rails.
• High configurability — Extensive programmable timing (CAS latencies, burst options, ODT settings) allows tuning for system timing and signal integrity needs.
• Signal calibration — On-die termination options and ZQ calibration (240 Ω ±1%) help maintain consistent impedance and reliable high-speed signaling.
• Compact BGA package — 96‑ball BGA surface-mount package provides a space-efficient solution for board-level integration.
• JEDEC compliance — Designed to meet DDR3(L) JESD standards for predictable interoperability with DDR3(L)-compliant memory controllers.

Why Choose M15T4G16256A-DEBG2S?

The M15T4G16256A-DEBG2S combines a 4Gb density with DDR3(L)-1866 capable timing in a 96‑ball BGA, offering a balance of capacity, speed, and board-level density for systems requiring JEDEC-compliant DDR3(L) memory. Its programmable timing, configurable termination, and ZQ calibration provide the signal integrity and tuning options needed in high-speed designs.

This device is suitable for designers who need a versatile DDR3(L) memory component with low-voltage operation options and standard JEDEC feature support; it offers a clear migration path across DDR3(L) speed grades while maintaining consistent package and interface characteristics.

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