M15T4G8512A (2S)

The M15T4G8512A (2S) is a 4Gb DDR3(L) SDRAM device from ESMT designed for industrial-grade applications. It implements a double-data-rate architecture with an eight-bank internal organization to deliver high-speed, synchronous memory for embedded and industrial systems.

This device supports dual supply operation (SSTL_135 and SSTL_15), JEDEC DDR3(L) compliance, differential CK/CK and DQS/DQS signaling, and a wide operating temperature range. These attributes make it suitable for designs that require robust performance, configurable signal integrity options, and reliable operation across extended temperature environments.

Key Features

• Memory Core & Architecture 4.295 Gbit density organized as 512M × 8 with eight internal banks and 8n prefetch architecture for DDR3(L) operation.
• Performance 1.066 GHz clock frequency (DDR3-2133 class) with listed access time of 13.75 ns and write cycle time (word/page) of 15 ns.
• Voltage & Interface Supports SSTL_135 (VDD/VDDQ = 1.35V) and SSTL_15 (VDD/VDDQ = 1.5V) supply options; parallel memory interface with differential clock and data strobe signals.
• Programmable Timing & Operation Multiple CAS latencies, CAS write latencies, additive latency, and write recovery time options configurable via mode registers to match system timing requirements.
• Signal Integrity & Calibration Configurable drive strength (DS) and on-die termination (RTT) settings, with ZQ calibration (external ZQ pad, 240 Ω ±1%) to maintain impedance accuracy.
• Power Management Supports auto refresh, self refresh (note: self refresh not supported if temperature > +95°C per datasheet limitations), partial array self refresh (PASR), and power-down modes for lower active and standby power.
• Package & Mounting Pb‑free 78-ball BGA package intended for surface-mount assembly.
• Industrial Qualification & Environmental Industrial-grade device with JEDEC DDR3(L) compliance and RoHS status: Compliant. Specified operation temperature condition: -40 °C to 105 °C.

Typical Applications

• Industrial & Embedded Systems — High-density DDR3(L) memory for industrial controllers and embedded platforms that require wide temperature operation and JEDEC-compliant DRAM.
• Networking & Communications — Buffering and packet memory in network appliances where synchronous, high-speed DDR3(L) transfers and configurable termination are required.
• Storage & Cache — System memory for storage controllers and cache buffers that benefit from the device’s parallel interface and fast access characteristics.
• High-performance Embedded Designs — Applications requiring configurable timing (CAS latency, write recovery, burst length) and reliable DDR3(L) signaling across extended temperature ranges.

Unique Advantages

• Wide Operating Temperature Range: Rated for -40 °C to 105 °C (operation condition from datasheet), supporting demanding industrial environments.
• Dual-Voltage Support: SSTL_135 and SSTL_15 compatibility (1.35V and 1.5V) enables flexible power designs and backward compatibility with different system rails.
• JEDEC DDR3(L) Compliance: Ensures interoperability with standard DDR3(L) memory controllers and system designs.
• Configurable Signal Integrity: On-die termination, configurable drive strength, and ZQ calibration deliver tunable impedance and improved signal margins.
• Flexible Timing Options: Wide range of programmable CAS and write latencies, additive latency, and burst configuration to match diverse performance profiles.
• Industrial-Grade Packaging: Pb‑free 78-ball BGA in a surface-mount form factor suitable for production assembly and rugged applications.

Why Choose M15T4G8512A (2S)?

The M15T4G8512A (2S) positions itself as a versatile, JEDEC-compliant DDR3(L) memory device that combines industrial temperature capability, dual-voltage operation, and a range of programmable timing and signal-integrity features. Its 4Gb density (512M × 8 organization), high-frequency operation, and configurable termination make it suitable for embedded and industrial designs that require reliable high-speed DRAM.

Designed and manufactured by ESMT as part of their DDR3(L) SDRAM family, this device offers a scalable memory option for engineers seeking predictable timing options, on-die calibration, and a surface-mount BGA package for production systems.

If you would like pricing, lead-time information, or a formal quotation for M15T4G8512A (2S), please request a quote or submit an inquiry to our sales team.