M15T4G8512A-DEBG2C
| Part Description |
DDR3L SDRAM 4Gb 512M×8 933MHz DDR3(L)-1866 78 Ball BGA |
|---|---|
| Quantity | 1,015 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 78 Ball BGA | Memory Format | DRAM | Technology | DDR3L | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 13.75 ns | Grade | Industrial | ||
| Clock Frequency | 933 MHz | Voltage | 1.35V, 1.5V | Memory Type | Volatile | ||
| Operating Temperature | -40°C – 95°C | Write Cycle Time Word Page | 15 ns | Packaging | 78 Ball BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 512M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.36 |
Overview of M15T4G8512A-DEBG2C – DDR3L SDRAM 4Gb 512M×8 933MHz DDR3(L)-1866 78 Ball BGA
The M15T4G8512A-DEBG2C is a 4.295 Gbit DDR3(L) SDRAM organized as 512M × 8 with an eight-bank architecture and double-data-rate operation. This device is specified for DDR3(L)-1866 data rate (933 MHz) and is supplied in a compact 78-ball BGA for surface-mount applications.
Designed to meet JEDEC DDR3(L) compliance and industrial-grade requirements, the device supports dual supply options (1.35V and 1.5V) and an extended operating temperature range of −40°C to 95°C for demanding environments.
Key Features
- Memory Architecture 4.295 Gbit capacity organized as 512M × 8 with eight internal banks and 8n prefetch architecture for DDR operation.
- Performance Rated for DDR3(L)-1866 operation (933 MHz clock frequency) with specified access time of 13.75 ns and write cycle time (word page) of 15 ns.
- Voltage and Power Supports SSTL_135 and SSTL_15 operation with VDD/VDDQ at 1.35V or 1.5V, enabling low-voltage system options.
- Signal and Timing Differential clock (CK/CK#) and data strobe (DQS/DQS#) support, double-data-rate transfer on DQ/DQS/DM, and a broad set of programmable CAS and write latencies for timing flexibility.
- Data Integrity and Refresh Auto Refresh and Self Refresh modes are supported to maintain data integrity across power and operating conditions.
- Power-Saving Modes Partial Array Self Refresh (PASR) and Power Down modes reduce power consumption during idle periods.
- Signal Integrity Controls Configurable drive strength (DS), On-Die Termination (RTT_Nom and RTT_WR), and ZQ calibration for impedance accuracy via external ZQ pad.
- Programmability Multiple programmable options including CAS Latency, CAS Write Latency, Additive Latency, burst type/length, and write recovery times to support a range of system designs.
- Package and Mounting 78-ball BGA surface-mount package suitable for compact, high-density board layouts; Pb-free (lead-free) designation in ordering information.
- Industrial Qualification JEDEC-qualified device with an operating temperature range of −40°C to 95°C for industrial deployments.
Typical Applications
- Industrial Systems Memory for industrial-grade platforms that require JEDEC-compliant DDR3(L) operation across −40°C to 95°C.
- High-Speed Embedded Memory Use where 4Gb DDR3(L) density at DDR3(L)-1866 (933 MHz) timing is required for system buffering and high-throughput data transfer.
- General DDR3(L) Applications Suitable for general applications that benefit from auto-refresh/self-refresh, low-voltage operation, and programmable timing options.
Unique Advantages
- Dual Supply Voltage Flexibility: Supports both 1.35V and 1.5V operation to accommodate system power and compatibility needs.
- Extended Temperature Range: −40°C to 95°C rating enables deployment in harsh and industrial environmental conditions.
- JEDEC Compliance: Standardized DDR3(L) feature set simplifies integration with JEDEC-compatible memory controllers and systems.
- Signal Integrity Controls: On-die termination, configurable drive strength, and ZQ calibration help tune interface impedance and improve signal margins.
- Programmable Timing Options: A wide range of CAS/write latencies and burst settings provide design flexibility for different performance and latency targets.
- Compact BGA Footprint: 78-ball BGA package supports high-density PCB layouts while delivering required memory capacity.
Why Choose M15T4G8512A-DEBG2C?
The M15T4G8512A-DEBG2C delivers a JEDEC-compliant DDR3(L) memory option with 4.295 Gbit density, flexible voltage operation (1.35V/1.5V), and programmable timing to fit a variety of system requirements. Its industrial-grade temperature range and signal-integrity features make it well suited for designs that demand reliable high-speed memory in challenging environments.
Choose this device when you need a standardized DDR3(L) memory component with configurable timing and termination options, a compact 78-ball BGA package, and the operating range required for industrial deployments.
Request a quote or submit a sales inquiry to obtain pricing, lead times, and additional technical details for the M15T4G8512A-DEBG2C.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A