M15T4G8512A-DEBG2C

4Gb DDR3L SDRAM Ind.
Part Description

DDR3L SDRAM 4Gb 512M×8 933MHz DDR3(L)-1866 78 Ball BGA

Quantity 1,015 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package78 Ball BGAMemory FormatDRAMTechnologyDDR3L
Memory Size4 GbitAccess Time13.75 nsGradeIndustrial
Clock Frequency933 MHzVoltage1.35V, 1.5VMemory TypeVolatile
Operating Temperature-40°C – 95°CWrite Cycle Time Word Page15 nsPackaging78 Ball BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization512M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.36

Overview of M15T4G8512A-DEBG2C – DDR3L SDRAM 4Gb 512M×8 933MHz DDR3(L)-1866 78 Ball BGA

The M15T4G8512A-DEBG2C is a 4.295 Gbit DDR3(L) SDRAM organized as 512M × 8 with an eight-bank architecture and double-data-rate operation. This device is specified for DDR3(L)-1866 data rate (933 MHz) and is supplied in a compact 78-ball BGA for surface-mount applications.

Designed to meet JEDEC DDR3(L) compliance and industrial-grade requirements, the device supports dual supply options (1.35V and 1.5V) and an extended operating temperature range of −40°C to 95°C for demanding environments.

Key Features

  • Memory Architecture 4.295 Gbit capacity organized as 512M × 8 with eight internal banks and 8n prefetch architecture for DDR operation.
  • Performance Rated for DDR3(L)-1866 operation (933 MHz clock frequency) with specified access time of 13.75 ns and write cycle time (word page) of 15 ns.
  • Voltage and Power Supports SSTL_135 and SSTL_15 operation with VDD/VDDQ at 1.35V or 1.5V, enabling low-voltage system options.
  • Signal and Timing Differential clock (CK/CK#) and data strobe (DQS/DQS#) support, double-data-rate transfer on DQ/DQS/DM, and a broad set of programmable CAS and write latencies for timing flexibility.
  • Data Integrity and Refresh Auto Refresh and Self Refresh modes are supported to maintain data integrity across power and operating conditions.
  • Power-Saving Modes Partial Array Self Refresh (PASR) and Power Down modes reduce power consumption during idle periods.
  • Signal Integrity Controls Configurable drive strength (DS), On-Die Termination (RTT_Nom and RTT_WR), and ZQ calibration for impedance accuracy via external ZQ pad.
  • Programmability Multiple programmable options including CAS Latency, CAS Write Latency, Additive Latency, burst type/length, and write recovery times to support a range of system designs.
  • Package and Mounting 78-ball BGA surface-mount package suitable for compact, high-density board layouts; Pb-free (lead-free) designation in ordering information.
  • Industrial Qualification JEDEC-qualified device with an operating temperature range of −40°C to 95°C for industrial deployments.

Typical Applications

  • Industrial Systems Memory for industrial-grade platforms that require JEDEC-compliant DDR3(L) operation across −40°C to 95°C.
  • High-Speed Embedded Memory Use where 4Gb DDR3(L) density at DDR3(L)-1866 (933 MHz) timing is required for system buffering and high-throughput data transfer.
  • General DDR3(L) Applications Suitable for general applications that benefit from auto-refresh/self-refresh, low-voltage operation, and programmable timing options.

Unique Advantages

  • Dual Supply Voltage Flexibility: Supports both 1.35V and 1.5V operation to accommodate system power and compatibility needs.
  • Extended Temperature Range: −40°C to 95°C rating enables deployment in harsh and industrial environmental conditions.
  • JEDEC Compliance: Standardized DDR3(L) feature set simplifies integration with JEDEC-compatible memory controllers and systems.
  • Signal Integrity Controls: On-die termination, configurable drive strength, and ZQ calibration help tune interface impedance and improve signal margins.
  • Programmable Timing Options: A wide range of CAS/write latencies and burst settings provide design flexibility for different performance and latency targets.
  • Compact BGA Footprint: 78-ball BGA package supports high-density PCB layouts while delivering required memory capacity.

Why Choose M15T4G8512A-DEBG2C?

The M15T4G8512A-DEBG2C delivers a JEDEC-compliant DDR3(L) memory option with 4.295 Gbit density, flexible voltage operation (1.35V/1.5V), and programmable timing to fit a variety of system requirements. Its industrial-grade temperature range and signal-integrity features make it well suited for designs that demand reliable high-speed memory in challenging environments.

Choose this device when you need a standardized DDR3(L) memory component with configurable timing and termination options, a compact 78-ball BGA package, and the operating range required for industrial deployments.

Request a quote or submit a sales inquiry to obtain pricing, lead times, and additional technical details for the M15T4G8512A-DEBG2C.

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