M15T4G8512A-EFBG2S

The M15T4G8512A-EFBG2S is a 4.295 Gbit DDR3(L) SDRAM device organized as 512M × 8 with an internal eight-bank architecture and 8n prefetch. It implements DDR3(L) double-data-rate operation with differential clocks and source-synchronous DQS to support high-speed memory transfers.

Designed for general high-speed memory applications, this device provides dual-voltage operation (1.35 V / 1.5 V), JEDEC compliance, and extended temperature capability for systems that require reliable DRAM performance across a wide thermal range.

Key Features

• Core & Architecture  DDR3(L) double-data-rate architecture with 8n prefetch and eight internal banks, supporting synchronized inputs via differential CK/CK and source-synchronous DQS/DQS pairs.
• Memory Organization  4Gb total density, internally configured as 64Mbit × 8 I/Os × 8 banks (512M × 8).
• Performance & Timing  Rated for 1.066 GHz clock frequency (DDR3(L)-2133); access time 13.75 ns and write cycle time (word page) 15 ns. Supports programmable CAS latency and write latency settings as documented.
• Voltage & Power  Supports SSTL_135 and SSTL_15 interfaces with VDD/VDDQ options of 1.35 V (± tolerance) and 1.5 V (± tolerance) for flexible system power designs.
• Signal Integrity & Calibration  Configurable on-die termination (RTT_NOM and RTT_WR), configurable drive strength (DS), ZQ calibration via external ZQ pad for impedance accuracy, and read/write leveling features.
• Programmable Functions  Multiple programmable timings and modes including CAS Latency options (5–16), CAS Write Latency options (5–12), additive latency, burst-type and burst-length control, self-refresh and power-down modes.
• Package & Mounting  78-ball BGA package for surface-mount assembly, suitable for compact board-level memory implementations.
• Operating Range & Compliance  Operating temperature range −40 °C to 105 °C, JEDEC DDR3(L) compliant, and RoHS compliant.

Typical Applications

• General High-Speed Memory  Use as system DRAM in designs requiring 4Gb density and DDR3(L)-2133 class data rates for high-throughput memory operations.
• Embedded and Computing Systems  Suitable for embedded controllers and computing modules that leverage DDR3(L) parallel memory interfaces and source-synchronous DQS operation.
• Industrial Systems  Extended operating temperature range (−40 °C to 105 °C) supports deployment in temperature-challenging industrial environments.
• Low-Voltage Designs  Support for 1.35 V operation enables lower-power system configurations where DDR3L operation is required.

Unique Advantages

• Flexible Voltage Options  Dual VDD/VDDQ support (1.35 V and 1.5 V) allows designers to target DDR3L low-voltage operation or standard DDR3 operation without changing part family.
• Programmable Timing and Modes  Wide range of CAS and write latency settings plus burst and refresh controls provide tuning options for system-level performance and compatibility.
• Signal Integrity Controls  Configurable on-die termination and drive strength together with ZQ calibration improve impedance matching and timing margin management.
• Compact BGA Footprint  78-ball BGA package minimizes board space while providing a surface-mount solution for high-density memory integration.
• JEDEC Compliance and RoHS  JEDEC DDR3(L) compliance and RoHS status support predictable integration into designs that follow industry standards and environmental requirements.

Why Choose M15T4G8512A-EFBG2S?

The M15T4G8512A-EFBG2S delivers a balanced combination of density (4.295 Gbit), DDR3(L) double-data-rate performance, and flexible power options in a compact 78-ball BGA package. Its programmable timing features, on-die termination, and ZQ calibration give system designers control over signal integrity and timing tuning for a range of board-level memory implementations.

This device is appropriate for designers seeking JEDEC-compliant DDR3(L) memory with extended temperature capability and configurable electrical characteristics, providing a reliable building block for high-throughput memory subsystems.

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