M15T8G16512A-BDBG2S

The M15T8G16512A-BDBG2S is an 8Gb DDR3(L) SDRAM device organized as 512M × 16 with an eight-bank architecture and 8n prefetch. This device implements double-data-rate transfer with differential clocking and data strobes for synchronous high-speed memory operation.

Targeted for general applications that require high-density, JEDEC-compliant DDR3(L) memory, this part operates at a maximum 800 MHz clock (DDR3(L)-1600, 11-11-11 timing) and supports dual supply options for 1.35 V (SSTL_135) and 1.5 V (SSTL_15).

Key Features

• Core & Architecture 8n prefetch architecture with eight internal banks; device arranged as 64Mbit × 16 I/Os × 8 banks per the datasheet.
• Memory Organization & Density 8.59 Gbit total memory size organized as 512M × 16 to deliver high-density DRAM in a single component.
• Interface & Speed Double-data-rate on DQ, DQS and DM with differential clock (CK/CK); specified for 800 MHz clock frequency (DDR3(L)-1600, 11-11-11).
• Power & Voltage Supports SSTL_135 (VDD/VDDQ = 1.35V −0.067V/+0.1V) and SSTL_15 (VDD/VDDQ = 1.5V ±0.075V) operating modes.
• Signal Integrity & Calibration Configurable drive strength (DS) and on-die termination (RTT_NOM/RTT_WR), plus ZQ calibration for impedance accuracy via external ZQ pad.
• Data Integrity & Timing Control Read/write leveling (MPR/MR), programmable CAS latencies, CAS write latencies, additive latency and selectable burst types/lengths for timing flexibility.
• Power Management & Refresh Auto Refresh, Self Refresh, Partial Array Self Refresh (PASR) and Power Down modes to manage power and retention behavior.
• Package & Mounting 96-ball BGA surface-mount package designed for compact board-level integration.
• Operating Range & Qualification Operating temperature range −40°C to 105°C and JEDEC DDR3(L) compliance as stated in the product specification.

Typical Applications

• General-purpose System Memory High-density DDR3(L) memory for computing and embedded platforms that require synchronous, double-data-rate operation.
• High-density Module and Board Designs 8Gb capacity in a 96-ball BGA enables compact footprint implementations where board space and memory density matter.
• Temperature-sensitive Systems Operation from −40°C to 105°C supports designs that require extended temperature operation for reliability in demanding environments.

Unique Advantages

• Flexible Voltage Operation: Supports both 1.35V and 1.5V SSTL standards to match system power requirements.
• High Density in Compact Package: 8Gb capacity in a 96-ball BGA provides a space-efficient memory solution for high-density applications.
• JEDEC Compliance: Designed to meet JEDEC DDR3(L) specifications, simplifying system integration and interoperability.
• Advanced Signal Control: Differential clocking, DQS-based synchronization, configurable ODT and drive strengths improve signal integrity across a range of systems.
• Programmable Timing: Wide range of CAS and write timing options plus read/write leveling and burst controls allow tuning for system timing and performance needs.
• Power Management Features: Multiple refresh and power-down modes including PASR and self-refresh help manage power consumption during idle or low-activity periods.

Why Choose M15T8G16512A-BDBG2S?

The M15T8G16512A-BDBG2S delivers JEDEC-compliant DDR3(L) functionality in a high-density 8Gb device with flexible voltage options, programmable timing, and advanced signal integrity features. Its 96-ball BGA package and −40°C to 105°C operating range make it suitable for compact, temperature-challenging designs that require reliable, synchronous DDR3(L) memory.

Engineers specifying this part will benefit from the combination of density, timing configurability, and signal/power management features that simplify integration into a broad set of general-purpose memory applications.

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