M16U4G16256A-2400
| Part Description |
Ind. -40~95°C, DDR4, 1.2V |
|---|---|
| Quantity | 1,144 Available (as of May 4, 2026) |
Specifications & Environmental
| Device Package | 96 Ball BGA | Memory Format | DRAM | Technology | DDR4 SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 14.16 ns | Grade | Industrial | ||
| Clock Frequency | 1.2 GHz | Voltage | 2.5V | Memory Type | Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 15 ns | Packaging | 96 Ball BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 256M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.36 |
Overview of M16U4G16256A-2400 – Ind. -40~95°C, DDR4, 1.2V
The M16U4G16256A-2400 from ESMT is an industrial-grade DDR4 SDRAM device organized as 256M × 16 for a total density of 4.295 Gbit. It provides JEDEC-compliant DDR4 architecture with 8 internal banks, differential clocking and differential DQS, and is designed for surface-mount integration in 96-ball BGA packages.
With nominal 1.2 V operation and an extended operating case temperature range of -40°C to +95°C, this memory device targets industrial and embedded designs that require validated DDR4 timing flexibility and robust signaling options for high-speed parallel memory interfaces.
Key Features
- Memory Organization
4.295 Gbit density arranged as 256M × 16 with 8 internal banks and a page size of 2 KB per bank. - DDR4 Architecture & Timing
DDR4 SDRAM technology with supported CAS latencies (CL) ranging from 9 to 24, additive latency (AL) options, burst lengths 8 and 4, and CAS write latency (CWL) options documented in the series datasheet. - Clock and Performance
Clock frequency 1.2 GHz with access time and cycle timing characteristics suitable for DDR4-2400 operation as described in the series information (access time 14.16 ns; write cycle time 15 ns). - Power and Voltage
Nominal VDD/VDDQ = 1.2 V ±5% (series datasheet); VPP and internal reference arrangements supported for DDR4 operation. - Signal Integrity & Calibration
On-die termination (nominal, park and dynamic ODT), ZQ calibration with external reference resistance, and adjustable internal VREFDQ to support stable high-speed signaling. - High-speed Interface Features
Differential clock inputs (CK_t/CK_c), bi-directional differential DQS, pseudo open-drain (POD) DQ interface, write leveling, and command/address parity for error detection. - Reliability & Refresh
Fine granularity refresh, temperature-controlled refresh (TCR), Low Power Auto Self Refresh (LPASR) and self-refresh abort are supported to manage refresh behavior across temperature ranges. - Programmability & Diagnostics
Multipurpose register read/write, programmable preamble, driver strength selection via MRS, data bus inversion (DBI) on x16 devices, data mask (DM), and write CRC for high-speed error detection. - Package & Environmental
Surface-mount 96 Ball BGA package; RoHS-compliant. JEDEC JESD-79-4 compliance stated in the series documentation.
Typical Applications
- Industrial Control
Memory for controllers, PLCs and embedded modules that require operation across -40°C to +95°C. - Networking and Communications
High-speed DDR4 buffering and packet memory where differential clocking, DQS, and write CRC support reliable data paths. - Embedded Systems
General-purpose DDR4 main or working memory in industrial embedded platforms using a 96-ball BGA surface-mount footprint.
Unique Advantages
- Industrial Temperature Range
Specified to operate from -40°C to +95°C (series datasheet), enabling deployment in harsh environments without compromise to DDR4 timing features. - Flexible Timing Support
Wide range of supported CAS, AL and CWL settings gives designers the flexibility to tune performance and timing for system needs. - Robust Signaling & On-die Calibration
ZQ calibration, ODT and adjustable VREFDQ improve signal integrity at high data rates and simplify board-level tuning. - JEDEC Compliance
Conforms to JEDEC JESD-79-4 series guidance (per datasheet), easing integration into standard DDR4 memory controllers and ecosystems. - Compact, SMT-ready Package
96 Ball BGA surface-mount package supports high-density board layouts and automated assembly processes. - Manufactured by ESMT
Part of the ESMT DDR4 SDRAM family, providing consistent series-level features and documentation for design verification.
Why Choose M16U4G16256A-2400?
The M16U4G16256A-2400 combines JEDEC-compliant DDR4 functionality, flexible timing options and on-die calibration with an industrial operating temperature range and a compact 96-ball BGA package. It is suited to engineers specifying reliable, high-speed parallel memory for industrial embedded systems, networking equipment and other applications that require validated DDR4 behavior across extended temperatures.
With a 4.295 Gbit density in a 256M × 16 organization, nominal 1.2 V operation, and series-level features such as differential clocking, DQS, ODT and refresh management, this ESMT device provides a clear specification set for system integration and long-term design stability.
Request a quote or submit a purchase inquiry to evaluate M16U4G16256A-2400 for your next industrial DDR4 design.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
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Revenue: $377.8 Million
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