M16U4G16256A-2400

4Gb DDR4 SDRAM Ind.
Part Description

Ind. -40~95°C, DDR4, 1.2V

Quantity 1,144 Available (as of May 4, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusActive
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package96 Ball BGAMemory FormatDRAMTechnologyDDR4 SDRAM
Memory Size4 GbitAccess Time14.16 nsGradeIndustrial
Clock Frequency1.2 GHzVoltage2.5VMemory TypeVolatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page15 nsPackaging96 Ball BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization256M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.36

Overview of M16U4G16256A-2400 – Ind. -40~95°C, DDR4, 1.2V

The M16U4G16256A-2400 from ESMT is an industrial-grade DDR4 SDRAM device organized as 256M × 16 for a total density of 4.295 Gbit. It provides JEDEC-compliant DDR4 architecture with 8 internal banks, differential clocking and differential DQS, and is designed for surface-mount integration in 96-ball BGA packages.

With nominal 1.2 V operation and an extended operating case temperature range of -40°C to +95°C, this memory device targets industrial and embedded designs that require validated DDR4 timing flexibility and robust signaling options for high-speed parallel memory interfaces.

Key Features

  • Memory Organization 
    4.295 Gbit density arranged as 256M × 16 with 8 internal banks and a page size of 2 KB per bank.
  • DDR4 Architecture & Timing 
    DDR4 SDRAM technology with supported CAS latencies (CL) ranging from 9 to 24, additive latency (AL) options, burst lengths 8 and 4, and CAS write latency (CWL) options documented in the series datasheet.
  • Clock and Performance 
    Clock frequency 1.2 GHz with access time and cycle timing characteristics suitable for DDR4-2400 operation as described in the series information (access time 14.16 ns; write cycle time 15 ns).
  • Power and Voltage 
    Nominal VDD/VDDQ = 1.2 V ±5% (series datasheet); VPP and internal reference arrangements supported for DDR4 operation.
  • Signal Integrity & Calibration 
    On-die termination (nominal, park and dynamic ODT), ZQ calibration with external reference resistance, and adjustable internal VREFDQ to support stable high-speed signaling.
  • High-speed Interface Features 
    Differential clock inputs (CK_t/CK_c), bi-directional differential DQS, pseudo open-drain (POD) DQ interface, write leveling, and command/address parity for error detection.
  • Reliability & Refresh 
    Fine granularity refresh, temperature-controlled refresh (TCR), Low Power Auto Self Refresh (LPASR) and self-refresh abort are supported to manage refresh behavior across temperature ranges.
  • Programmability & Diagnostics 
    Multipurpose register read/write, programmable preamble, driver strength selection via MRS, data bus inversion (DBI) on x16 devices, data mask (DM), and write CRC for high-speed error detection.
  • Package & Environmental 
    Surface-mount 96 Ball BGA package; RoHS-compliant. JEDEC JESD-79-4 compliance stated in the series documentation.

Typical Applications

  • Industrial Control 
    Memory for controllers, PLCs and embedded modules that require operation across -40°C to +95°C.
  • Networking and Communications 
    High-speed DDR4 buffering and packet memory where differential clocking, DQS, and write CRC support reliable data paths.
  • Embedded Systems 
    General-purpose DDR4 main or working memory in industrial embedded platforms using a 96-ball BGA surface-mount footprint.

Unique Advantages

  • Industrial Temperature Range 
    Specified to operate from -40°C to +95°C (series datasheet), enabling deployment in harsh environments without compromise to DDR4 timing features.
  • Flexible Timing Support 
    Wide range of supported CAS, AL and CWL settings gives designers the flexibility to tune performance and timing for system needs.
  • Robust Signaling & On-die Calibration 
    ZQ calibration, ODT and adjustable VREFDQ improve signal integrity at high data rates and simplify board-level tuning.
  • JEDEC Compliance 
    Conforms to JEDEC JESD-79-4 series guidance (per datasheet), easing integration into standard DDR4 memory controllers and ecosystems.
  • Compact, SMT-ready Package 
    96 Ball BGA surface-mount package supports high-density board layouts and automated assembly processes.
  • Manufactured by ESMT 
    Part of the ESMT DDR4 SDRAM family, providing consistent series-level features and documentation for design verification.

Why Choose M16U4G16256A-2400?

The M16U4G16256A-2400 combines JEDEC-compliant DDR4 functionality, flexible timing options and on-die calibration with an industrial operating temperature range and a compact 96-ball BGA package. It is suited to engineers specifying reliable, high-speed parallel memory for industrial embedded systems, networking equipment and other applications that require validated DDR4 behavior across extended temperatures.

With a 4.295 Gbit density in a 256M × 16 organization, nominal 1.2 V operation, and series-level features such as differential clocking, DQS, ODT and refresh management, this ESMT device provides a clear specification set for system integration and long-term design stability.

Request a quote or submit a purchase inquiry to evaluate M16U4G16256A-2400 for your next industrial DDR4 design.

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