M16U4G16256A-2666(2Z)

The M16U4G16256A-2666(2Z) is a DDR4 SDRAM device offering 4.295 Gbit of volatile memory organized as 256M × 16. It implements DDR4 architecture with high-speed differential clocking and bi-directional differential data strobes for synchronized, high-throughput parallel memory interfacing.

Designed for JEDEC-compliant DDR4 systems, this device delivers DDR4-2666 class performance with flexible latency and interface features geared toward embedded and system-memory applications that require standardized DDR4 behavior, signal-integrity controls and compact BGA packaging.

Key Features

• Core Architecture: DDR4 SDRAM technology with 8 internal banks arranged as 2 groups of 4 banks; commands are entered on each positive clock edge and DLL aligns DQ/DQS with CK transitions.
• Memory Density & Organization: 4.295 Gbit total capacity, organized as 256M × 16, providing a 2 KB page size per bank (COLBITS and ORG determine page calculation).
• Performance: DDR4-2666 performance class with a 1.333 GHz clock frequency, access time of 13.75 ns and write cycle time (word/page) of 15 ns. Supported CAS latencies include CL = 9,11–16,18–24 and multiple additive latencies.
• Power and Voltage: JEDEC-standard core and I/O supply: VDD = VDDQ = 1.2 V ±5%. VPP range is 2.375 V to 2.75 V. On-die VREFDQ is adjustable.
• Signal Integrity & Timing Controls: Differential clock inputs (CK_t/CK_c), differential DQS (DQS_t/DQS_c), nominal/park/dynamic ODT, ZQ calibration (RZQ = 240 Ω ±1%), write leveling and programmable preamble.
• Error Detection & Interface Options: CA parity, write CRC for DQ, Data Bus Inversion (DBI) for x16 devices, Data Mask (DM), and Pseudo Open Drain (POD) interface options.
• Refresh & Low-Power Modes: Fine granularity refresh with typical average refresh periods (7.8 μs for 0°C ≤ Tc ≤ +85°C; 3.9 μs for +85°C < Tc ≤ +95°C), Temperature Controlled Refresh (TCR), Low Power Auto Self Refresh (LP ASR), and self-refresh abort.
• Package & Mounting: 96-ball BGA package for surface-mount assembly; compact footprint for board-area-sensitive designs.
• Standards & Compliance: JEDEC JESD-79-4 compliant and RoHS compliant.

Unique Advantages

• High-bandwidth DDR4-2666 operation: Supports 1.333 GHz clocking and DDR4-2666 timing (19-19-19) to meet higher data-rate system requirements.
• Flexible latency and timing options: Wide range of supported CAS and additive latency settings plus multiple CWL options enable tuning for system-level performance and compatibility.
• Enhanced signal integrity features: Differential clocking, differential DQS, ODT, ZQ calibration and DBI (x16) reduce signal noise and simplify termination strategy for reliable high-speed operation.
• Robust refresh and low-power controls: Fine granularity refresh, TCR and LP ASR modes provide control over refresh behavior and power consumption across temperature ranges defined in the datasheet.
• Compact BGA form factor: 96-ball BGA surface-mount package conserves PCB area while supporting high-density board designs.
• JEDEC compliance and verification features: Built to JESD-79-4 with CA parity and write CRC to help detect command/address and data errors during operation.

Why Choose M16U4G16256A-2666(2Z)?

The M16U4G16256A-2666(2Z) provides a JEDEC-compliant DDR4 memory solution that combines 4.295 Gbit density, DDR4-2666 performance and comprehensive signal-integrity and reliability features. Its supported latency options, programmable interface controls and standard DDR4 electrical requirements make it suitable for system designs that need standardized, high-speed parallel memory.

This device is well-suited for engineers and designers seeking a verified DDR4 component with compact BGA packaging and a set of configurable timing, termination and error-detection features that support robust system integration and predictable behavior in DDR4 memory subsystems.

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