M16U4G16256A-2666

The M16U4G16256A-2666 is an industrial-grade DDR4 SDRAM device from ESMT, organized as 256M × 16 for a total density of 4.295 Gbit. It implements DDR4 architecture with an 8-bank internal structure and a parallel memory interface designed for embedded and industrial memory applications.

This device targets industrial systems that require JEDEC‑compliant DDR4 memory with configurable timing options, multi-mode refresh and on-die termination, delivering a combination of density, flexible timing configurations and industrial temperature capability.

Key Features

• Memory Density & Organization 4.295 Gbit organized as 256M × 16 providing a 2 KB page size per bank and 8 internal banks arranged in two groups of four.
• DDR4 Architecture & Data Path DDR4 SDRAM with differential clock inputs (CK_t/CK_c) and bi-directional differential data strobe (DQS_t/DQS_c); 8-bit prefetch for high-speed data transfer.
• Supported Timing Modes Wide CAS latency support (CL = 9–24) and multiple CAS Write Latency (CWL) options; additive latency (AL) of 0, CL‑1 and CL‑2; burst length 4 or 8 supported on the fly.
• Voltage & Power Datasheet specifies core supplies VDD = VDDQ = 1.2V ±5% and VPP = 2.375–2.75V; product specifications list a VoltageSupply value (2.5V) as provided in the product data.
• Refresh & Low‑Power Modes Fine granularity refresh, Temperature Controlled Refresh (TCR), Low Power Auto Self Refresh (LPASR), and self‑refresh abort are supported to match system power and thermal needs.
• Signal Integrity & Calibration ZQ calibration for output drivers (RZQ = 240 Ω ±1%), on‑die termination (nominal, park and dynamic ODT), programmable preamble and write leveling.
• Data Integrity & Diagnostics Command/Address parity, write CRC for DQ error detection, Data Bus Inversion (DBI) for x16 devices, and per‑DRAM addressability (PDA) for individual mode register settings.
• Package & Mounting 96‑ball BGA surface-mount package suitable for compact board designs; JEDEC JESD‑79‑4 compliant signaling and command structure.
• Industrial Temperature Range Datasheet lists an operating case temperature range Tc = -40°C to +95°C; product data also indicates industrial grade suitability and JEDEC qualification.
• Performance Point Clock frequency listed at 1.333 GHz and access time at 13.75 ns in the product specifications for the M16U4G16256A-2666 variant.

Typical Applications

• Industrial Control Systems Provides JEDEC‑compliant DDR4 memory density and timing flexibility for embedded controllers and industrial automation where extended temperature operation is required.
• Network & Communication Equipment DDR4 performance and features such as CRC, DBI and ODT support stable high‑speed data buffering in packet processing and buffering tasks.
• Embedded Memory Subsystems Compact 96‑ball BGA packaging and 256M × 16 organization make this device suitable for space‑constrained boards in industrial embedded platforms.

Unique Advantages

• Industrial‑Grade Temperature Capability: Documented operating case temperature range down to -40°C and up to +95°C in the datasheet supports deployment in thermally demanding environments.
• Flexible Timing and Reliability Features: Extensive CL and CWL options, AL settings, refresh modes, command/address parity and write CRC enable designers to tune performance and error detection for system needs.
• Low‑Voltage DDR4 Core: Datasheet specifies VDD/VDDQ = 1.2V ±5%, providing the low-voltage DDR4 interface expected in modern memory subsystems.
• Compact Surface‑Mount BGA: The 96‑ball BGA package offers a high‑density footprint appropriate for embedded board designs.
• JEDEC Compliance: JEDEC JESD‑79‑4 compliance ensures predictable command/clock behavior and interoperability within JEDEC DDR4 memory ecosystems.

Why Choose M16U4G16256A-2666?

The M16U4G16256A-2666 positions itself as an industrial DDR4 memory device combining 4.295 Gbit density, flexible timing configurations and a compact 96‑ball BGA package. Its feature set—including ZQ calibration, ODT, CRC, DBI and a broad set of latency options—lets system designers balance performance, signal integrity and power for industrial and embedded applications.

This part is suited for designers and procurement teams building JEDEC‑compliant DDR4 memory subsystems for industrial environments that require documented temperature capability and device-level configurability. The available timing, refresh and reliability features support long‑life deployments and predictable system behavior.

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