M16U4G16256A (2Z)

The M16U4G16256A (2Z) is a DDR4 SDRAM memory device from ESMT designed as a 256M × 16 DRAM organized for parallel memory interfaces. It provides 4.295 Gbit of volatile storage with JEDEC qualification and RoHS compliance. With documented operating temperature down to -40 °C and up to 105 °C and a high clock capability, it targets electronic designs that require compact BGA packaging, established JEDEC DDR4 architecture, and stable timing characteristics.

Key Features

• Memory Architecture — DDR4 SDRAM organized as 256M × 16 for a total memory size of 4.295 Gbit, optimized for parallel memory interfaces.
• Performance — Clock frequency up to 1.6 GHz to support high-speed DDR4 operation; access time specified at 14.25 ns for responsive memory access.
• Timing — Write cycle time for word page operations of 15 ns, delivering predictable write timing for system designs.
• Power — Voltage supply specified as 2.5 V in product data; use this parameter when designing power rails and level translation.
• Package & Mounting — Supplied in a 96 Ball BGA package with surface mount assembly, enabling compact PCB layout and high density placement.
• Temperature Range & Qualification — Operating temperature rated from -40 °C to 105 °C and specified as Grade: Automotive; qualification listed as JEDEC.
• Compliance — RoHS status: Compliant, supporting regulatory requirements for lead-free designs.

Typical Applications

• Embedded memory subsystems — Use as DDR4 volatile storage in systems that require parallel memory interfaces and JEDEC DDR4 architecture.
• High-temperature electronics — Suitable for designs requiring operation across a wide temperature range (−40 °C to 105 °C) as specified.
• Compact PCB designs — 96 Ball BGA surface-mount package enables high-density board layouts where footprint and routing are constrained.
• Systems requiring defined timing — Controlled access time and write cycle time support designs that depend on predictable DRAM timing behavior.

Unique Advantages

• High-density DDR4 storage: 4.295 Gbit capacity in a 256M × 16 organization provides significant on-board memory in a compact form factor.
• Measured timing performance: Access time of 14.25 ns and 15 ns write cycle time for word page operations enable consistent memory timing characteristics.
• High clock capability: 1.6 GHz clock frequency supports fast DDR4 operation when integrated into compatible memory controllers.
• Compact BGA package: 96 Ball BGA surface-mount package reduces PCB area while supporting standard assembly processes.
• JEDEC qualification: Qualification listed as JEDEC, aligning the device with established DDR4 standards and interoperability expectations.
• Regulatory compliance: RoHS compliant for designs requiring lead-free components.

Why Choose M16U4G16256A (2Z)?

The M16U4G16256A (2Z) delivers DDR4 SDRAM capacity and timing characteristics packaged for compact, surface-mounted board designs. Its combination of 4.295 Gbit density, defined access and write timings, and 96 Ball BGA packaging make it appropriate for systems that need JEDEC DDR4 memory in tight form factors and wide operating temperature ranges.

This device is well-suited to teams designing memory subsystems where stable timing, compact footprint, and JEDEC alignment are key selection criteria. The documented specifications provide clear parameters for power, timing, temperature, and package when evaluating system integration and long-term deployment.

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