M15T8G16512A-DEBG2S

The M15T8G16512A-DEBG2S is an 8.59 Gbit DDR3(L) SDRAM device organized as 512M x 16 with an eight-bank architecture. Implementing double-data-rate transfer and a differential clock/DQS interface, this device targets general high-speed memory applications that require JEDEC-compliant DDR3(L) functionality.

Rated for a 933 MHz clock (DDR3(L)-1866, 13-13-13) and supporting both 1.35 V and 1.5 V supplies, the device is offered in a 96-ball BGA package and operates across a wide temperature range (−40 °C to 105 °C).

Key Features

• Core & Architecture 8n prefetch DDR3(L) architecture organized as 64M × 16 I/Os × 8 banks (512M × 16 total) for synchronous, high-speed operation.
• Performance & Timing 933 MHz clock (DDR3(L)-1866 data rate) with supported CAS latencies from 5 to 16 and documented timings including a 13.75 ns access time and 15 ns write cycle time (word/page).
• Power & Voltage Dual supply support: SSTL_135 (VDD/VDDQ = 1.35 V) and SSTL_15 (VDD/VDDQ = 1.5 V) with specified voltage tolerances per datasheet.
• Signal & Data Integrity Differential clock (CK/CK) and differential data strobe (DQS/DQS) with on-die termination (configurable RTT_Nom/RTT_WR) and ZQ calibration for impedance accuracy.
• Programmability & Calibration Configurable driver strength (DS), on-die termination settings, write leveling and read leveling (MPR), and programmable burst lengths/types and additive latency options.
• Power Management & Refresh Auto Refresh, Self Refresh (normal/extended temperature ranges), Partial Array Self Refresh (PASR), and Power Down modes to manage power and data retention.
• Package & Mounting Pb‑free 96 ball BGA package designed for surface mount assembly.
• Standards & Qualification JEDEC DDR3(L) compliant device with documented signal and timing behavior in the datasheet.
• Environmental Compliance RoHS compliant.

Typical Applications

• General high-speed memory subsystems — for systems requiring synchronous DDR3(L) DRAM with differential clock and DQS interfaces.
• Memory modules and system buffers — where JEDEC‑compliant DDR3(L) timing, on-die termination and ZQ calibration are required.
• Embedded and industrial systems — applications that benefit from a wide operating temperature range (−40 °C to 105 °C) and dual-voltage operation.

Unique Advantages

• Dual-voltage operation: Supports both 1.35 V and 1.5 V SSTL standards to match system power constraints and interoperability.
• Flexible timing and programmability: Broad CAS latency and additive latency options plus configurable burst length/type enable tuning for diverse system designs.
• Signal integrity controls: Configurable ODT, driver strength and ZQ calibration help maintain signal integrity across boards and layouts.
• Power management modes: Multiple refresh and power-down modes (including PASR and self-refresh) reduce active power and support low-power operational states.
• Compact BGA package: 96-ball BGA surface-mount package facilitates high-density board layouts and automated assembly.
• Wide operating temperature: −40 °C to 105 °C rating supports deployment across varied thermal environments.

Why Choose M15T8G16512A-DEBG2S?

The M15T8G16512A-DEBG2S combines JEDEC‑compliant DDR3(L) architecture with flexible timing, on-die termination and ZQ calibration to provide a configurable, high-bandwidth volatile memory option in a compact 96-ball BGA package. Dual-voltage operation and a wide operating temperature range make it adaptable to many system requirements.

This device is appropriate for designers needing a documented, programmable DDR3(L) memory building block with standard timing options, comprehensive signal integrity controls and multiple power modes to balance performance and power consumption.

Request a quote or submit an inquiry to purchase the M15T8G16512A-DEBG2S and include your required quantities and any application-specific questions to expedite processing.