M15T5121632A-BDBG

The M15T5121632A-BDBG is a 512Mb DDR3(L) SDRAM device organized as 4M×16 with eight internal banks and a double-data-rate architecture. This device implements differential clocks (CK/CK) and data strobe (DQS/DQS) for source-synchronous high‑speed transfers.

Rated for DDR3(L)-1600 operation (800 MHz) with dual supply options (1.35V SSTL_135 and 1.5V SSTL_15), the M15T5121632A-BDBG addresses designs that require JEDEC-compliant DDR3(L) memory in a compact 96‑ball BGA surface-mount package.

Key Features

• Memory Organization — 512Mb capacity organized as 4M×16 with 8 banks, delivering a page size of 2 KB per bank based on column configuration.
• Performance — Supports DDR3(L)-1600 data rate (800 MHz) and double-data-rate transfers on DQ, DQS and DM; ordering option specifies 11-11-11 timing for this part.
• Voltage & Power — Dual supply operation: SSTL_135 at VDD/VDDQ = 1.35V (‑0.067V/+0.1V) and SSTL_15 at VDD/VDDQ = 1.5V (±0.075V); includes power-saving modes such as Auto Refresh, Self Refresh and Power Down.
• Signal & Calibration — Differential clocking, configurable output driver impedance and on-die termination (RTT_Nom and RTT_WR), plus ZQ calibration via external ZQ pad for impedance accuracy.
• Programmability & Timing — Programmable CAS latencies (5–13), CAS write latencies, additive latency options, write recovery times and selectable burst types/lengths for system tuning.
• Reliability & Modes — JEDEC DDR3(L) compliance with features including Auto Refresh, Self Refresh, Partial Array Self Refresh (PASR), and configurable data strobe (DS) for system compatibility.
• Package & Temperature — Surface-mount 96 Ball BGA package; commercial operating temperature range 0°C to 85°C; RoHS compliant.

Typical Applications

• General applications — Suited to systems requiring JEDEC-compliant DDR3(L) memory at 512Mb density and DDR3(L)-1600 data rates.
• Low-voltage memory designs — Use where selectable 1.35V or 1.5V supply operation is required for power and compatibility trade-offs.
• Compact board-level implementations — 96 Ball BGA surface-mount package supports space-constrained designs needing high-density DRAM.
• Systems requiring programmable timing — Designs that need flexible CAS latency, burst length and on-die termination options for signal integrity tuning.

Unique Advantages

• Dual-voltage flexibility: Supports both 1.35V and 1.5V supply rails (SSTL_135 / SSTL_15) to match system power and compatibility requirements.
• JEDEC-compliant DDR3(L): Conforms to DDR3(L) standards, simplifying integration into standard DDR3 memory subsystems.
• Programmable timing and termination: Multiple CAS latency and RTT settings allow designers to tune performance and signal integrity for specific board implementations.
• Integrated calibration: ZQ calibration provides on-die impedance accuracy for reliable DDR signaling.
• Compact BGA footprint: 96 Ball BGA surface-mount package enables high-density layouts while maintaining standard BGA mounting.
• Power management features: Auto Refresh, Self Refresh, PASR and Power Down modes help reduce standby power in appropriate system states.

Why Choose M15T5121632A-BDBG?

The M15T5121632A-BDBG delivers a JEDEC-compliant DDR3(L) memory solution in a 512Mb density with flexible voltage operation, programmable timing and on-die termination features for board-level signal tuning. Its 96 Ball BGA package and commercial temperature rating (0°C to 85°C) make it suitable for compact designs that require a standardized DDR3(L) memory element.

With support for differential clocking, ZQ calibration and multiple power-saving modes, this device targets designers who need a configurable, industry-standard DRAM building block that balances performance, integration and system-level power management.

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