M15T8G16512A-EFBG2S

8Gb DDR3L SDRAM Auto.
Part Description

DDR3L SDRAM 8Gb (512M × 16) 1066MHz 96‑Ball BGA

Quantity 768 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package96 Ball BGAMemory FormatDRAMTechnologyDDR3L
Memory Size8 GbitAccess Time13.75 nsGradeAutomotive
Clock Frequency1.066 GHzVoltage1.35V, 1.5VMemory TypeVolatile
Operating Temperature-40°C – 105°CWrite Cycle Time Word Page15 nsPackaging96 Ball BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization512M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.36

Overview of M15T8G16512A-EFBG2S – DDR3L SDRAM 8Gb (512M × 16) 1066MHz 96‑Ball BGA

The M15T8G16512A-EFBG2S is an 8Gb DDR3(L) SDRAM device from ESMT, organized as 512M × 16 with eight internal banks and an 8n prefetch architecture. Designed for high-speed, double-data-rate operation, this device supports DDR3(L)-2133 transfer rates and operates from either 1.35V or 1.5V supplies.

Its feature set—differential clocks and DQS, configurable on-die termination, ZQ calibration and extensive programmable timing—makes it suitable for general high-speed memory applications requiring compact BGA mounting and wide operating temperature range.

Key Features

  • Memory Density & Organization — 8.59 Gbit capacity organized as 512M × 16, implemented as 64M × 16 × 8 banks for high-density system memory.
  • Performance — Clock frequency 1.066 GHz (DDR3(L)-2133 data rate) with reported access time of 13.75 ns and write cycle time (word/page) of 15 ns.
  • Interface & Architecture — Double-data-rate on DQ/DQS/DM, differential clock (CK/CK) and DQS/DQS source-synchronous operation, and 8n prefetch architecture.
  • Power — Supports SSTL_135 and SSTL_15 signaling with VDD/VDDQ = 1.35V (± tolerances) or 1.5V (± tolerances) for flexible system power options.
  • Data Integrity & Signal Control — Auto/self-refresh, power-down modes, configurable OD I and DS, on-die termination (RTT_NOM/RTT_WR options) and ZQ calibration for impedance accuracy.
  • Programmability & Timing — Multiple programmable CAS latencies and write/recovery timings (CAS latency options 5–16; CAS write latency and write recovery programmable), burst type and length options, and read/write leveling features.
  • Package & Mounting — 96‑ball BGA package, surface-mount device suitable for space-constrained board designs.
  • Operating Conditions — Specified operating temperature range −40°C to 105°C and JEDEC DDR3(L) compliance.
  • Environmental Compliance — RoHS‑compliant, lead‑free package.

Typical Applications

  • General high-speed memory systems — Provides DDR3(L)-2133 performance for systems requiring high sustained data throughput.
  • Low-voltage designs — Supports both 1.35V and 1.5V operation for systems targeting reduced power consumption or mixed-voltage compatibility.
  • Compact, surface-mount assemblies — 96‑ball BGA package allows integration into space-constrained PCB layouts.
  • Systems requiring wide temperature operation — Rated for −40°C to 105°C operation for applications that need extended thermal capability.

Unique Advantages

  • High-density memory in a compact package: 8.59 Gbit capacity in a 96‑ball BGA reduces board-level BOM and preserves PCB area.
  • Flexible power operation: Dual VDD/VDDQ support (1.35V and 1.5V) enables designers to select the most appropriate power-performance trade-off.
  • JEDEC DDR3(L) compliance: Standardized timing and signaling options simplify system integration and interoperability.
  • Signal integrity controls: Configurable on-die termination, drive strength settings, ZQ calibration and differential signaling improve signal margin in high-speed designs.
  • Programmable timing and leveling: Multiple CAS and write latency options plus read/write leveling provide flexibility to tune performance for target systems.
  • Wide operating temperature range: −40°C to 105°C rating supports deployment in thermally challenging environments.

Why Choose M15T8G16512A-EFBG2S?

The M15T8G16512A-EFBG2S delivers JEDEC‑compliant DDR3(L) performance in a high-density 512M × 16 configuration, supporting DDR3(L)-2133 data rates with flexible voltage operation and extensive signal/control features. Its combination of programmable timing, on-die termination options and ZQ calibration helps designers manage signal integrity at high data rates while the 96‑ball BGA package supports compact system layouts.

This device is well suited to designs that require high throughput, programmable timing flexibility and reliable operation across a wide temperature range. Backed by ESMT's DDR3(L) product family specifications, it offers a practical memory building block for general high-speed memory applications.

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