M15T5121632A-DEBG

512Mb DDR3L SDRAM
Part Description

DDR3L SDRAM 512Mb 32M×16 933MHz 96 Ball BGA

Quantity 1,748 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package96 Ball BGAMemory FormatDRAMTechnologyDDR3L
Memory Size512 MbitAccess Time13.75 nsGradeCommercial
Clock Frequency933 MHzVoltage1.35V, 1.5VMemory TypeVolatile
Operating Temperature0°C – 85°CWrite Cycle Time Word Page15 nsPackaging96 Ball BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.28

Overview of M15T5121632A-DEBG – DDR3L SDRAM 512Mb 32M×16 933MHz 96 Ball BGA

The M15T5121632A-DEBG is a 512Mb DDR3(L) SDRAM from ESMT, built on an 8-bank DDR3(L) architecture with 4M × 16 I/Os per bank (32M × 16 organization). It delivers high-speed double-data-rate operation with a 933 MHz clock frequency (DDR3(L)-1866 data rate) for general high-throughput memory needs.

Designed for surface-mount applications, the device supports dual supply options (1.35V and 1.5V), JEDEC compliance and a commercial operating range, making it suitable for systems that require standardized DDR3(L) performance in a compact 96-ball BGA package.

Key Features

  • Memory Architecture and Organization — 512Mb capacity organized as 4M × 16 I/Os × 8 banks (32M × 16 organization) for banked access and page-based transfers.
  • High-Speed DDR3(L) Interface — Supports differential clock (CK/CK) and data strobe (DQS/DQS) with double-data-rate transfers and a clock frequency of 933 MHz (DDR3(L)-1866 data rate).
  • Prefetch and Burst — 8n prefetch architecture with burst length options and on-the-fly burst control for efficient sequential data transfers.
  • Programmable Timing — Configurable CAS latencies (5–13), CAS write latencies (5–9), additive latency options, and multiple write-recovery time settings to match system timing requirements.
  • Signal and Power Management — Configurable drive strength (DS), on-die termination (RTT_Nom and RTT_WR) options, ZQ calibration for impedance accuracy, and support for power-down, auto-refresh and self-refresh modes.
  • Voltage Flexibility — Operates with SSTL_135 (VDD/VDDQ = 1.35V) and SSTL_15 (VDD/VDDQ = 1.5V) supply options to support low-voltage and standard-voltage system designs.
  • Package and Mounting — 96-ball BGA package, surface-mount design, and Pb‑free packaging.
  • Quality and Compliance — JEDEC DDR3(L) compliant and RoHS compliant; commercial grade with an operating temperature range of 0°C to 85°C.

Typical Applications

  • High-throughput Embedded Systems — Provides DDR3(L)-class SDRAM bandwidth and programmable timing for embedded processors and application controllers requiring standardized DRAM interfaces.
  • Networking and Communications Equipment — Suitable for buffering and packet processing functions that need synchronous DDR3(L) transfers and banked memory organization.
  • Consumer and Industrial Electronics — Fits systems that leverage 1.35V or 1.5V memory rails and require JEDEC-compliant DDR3(L) devices in a compact BGA footprint.

Unique Advantages

  • Flexible Voltage Support: Dual VDD/VDDQ options (1.35V and 1.5V) enable deployment in both low-voltage and standard-voltage system designs.
  • Configurable Signal Integrity: On-die termination and configurable drive strength improve signal matching for diverse board layouts and timing budgets.
  • Precise Impedance Calibration: ZQ calibration ensures DS/ODT impedance accuracy via an external ZQ pad for stable signal performance.
  • Broad Timing Flexibility: Multiple CAS, write-latency and write-recovery settings accommodate a wide range of system timing requirements.
  • Compact, Industry-Standard Package: 96-ball BGA provides a space-efficient surface-mount solution with Pb‑free compliance for modern PCB assembly.
  • Standards-Based Interoperability: JEDEC DDR3(L) compliance supports integration into systems designed around established DDR3(L) specifications.

Why Choose M15T5121632A-DEBG?

The M15T5121632A-DEBG positions itself as a standards-compliant DDR3(L) memory building block delivering 512Mb capacity, flexible voltage operation (1.35V / 1.5V) and high-speed DDR3(L)-1866 class transfers with a 933 MHz clock. Its programmable timing, configurable termination and ZQ calibration make it adaptable to many board-level designs that require reliable synchronous DRAM behavior in a compact BGA package.

This device suits designers and OEMs seeking JEDEC-compliant DDR3(L) memory for general-purpose, high-throughput applications where space, timing flexibility and signal integrity controls are important for long-term system stability and scalability.

Request a quote or submit an availability inquiry to get pricing and lead-time information for the M15T5121632A-DEBG.

Request a Quote

















    No file selected



    Our team will respond within 24 hours.


    I agree to receive newsletters and promotional emails. I can unsubscribe at any time.

    Certifications and Membership
    NQA AS9100 CMYK ANAB
    NQA AS9100 ANAB Badge
    ESD2020 Badge
    ESD2020 Association Badge
    GIDEP Badge
    GIDEP Badge
    Suntsu ERAI MemberVerification
    Suntsu ERAI Member Verification
    Available Shipping Methods
    FedEx
    UPS
    DHL
    Accepted Payment Methods
    American Express
    American Express
    Discover
    Discover
    MasterCard
    MasterCard
    Visa
    Visa
    UnionPay
    UnionPay

    Date Founded: 1998


    Headquarters: Hsinchu Science Park, Hsinchu, Taiwan


    Employees: 400+


    Revenue: $377.8 Million


    Certifications and Memberships: N/A


    Featured Products
    Latest News
    keyboard_arrow_up