M15T5121632A-DEBG
| Part Description |
DDR3L SDRAM 512Mb 32M×16 933MHz 96 Ball BGA |
|---|---|
| Quantity | 1,748 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 96 Ball BGA | Memory Format | DRAM | Technology | DDR3L | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 13.75 ns | Grade | Commercial | ||
| Clock Frequency | 933 MHz | Voltage | 1.35V, 1.5V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 85°C | Write Cycle Time Word Page | 15 ns | Packaging | 96 Ball BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.28 |
Overview of M15T5121632A-DEBG – DDR3L SDRAM 512Mb 32M×16 933MHz 96 Ball BGA
The M15T5121632A-DEBG is a 512Mb DDR3(L) SDRAM from ESMT, built on an 8-bank DDR3(L) architecture with 4M × 16 I/Os per bank (32M × 16 organization). It delivers high-speed double-data-rate operation with a 933 MHz clock frequency (DDR3(L)-1866 data rate) for general high-throughput memory needs.
Designed for surface-mount applications, the device supports dual supply options (1.35V and 1.5V), JEDEC compliance and a commercial operating range, making it suitable for systems that require standardized DDR3(L) performance in a compact 96-ball BGA package.
Key Features
- Memory Architecture and Organization — 512Mb capacity organized as 4M × 16 I/Os × 8 banks (32M × 16 organization) for banked access and page-based transfers.
- High-Speed DDR3(L) Interface — Supports differential clock (CK/CK) and data strobe (DQS/DQS) with double-data-rate transfers and a clock frequency of 933 MHz (DDR3(L)-1866 data rate).
- Prefetch and Burst — 8n prefetch architecture with burst length options and on-the-fly burst control for efficient sequential data transfers.
- Programmable Timing — Configurable CAS latencies (5–13), CAS write latencies (5–9), additive latency options, and multiple write-recovery time settings to match system timing requirements.
- Signal and Power Management — Configurable drive strength (DS), on-die termination (RTT_Nom and RTT_WR) options, ZQ calibration for impedance accuracy, and support for power-down, auto-refresh and self-refresh modes.
- Voltage Flexibility — Operates with SSTL_135 (VDD/VDDQ = 1.35V) and SSTL_15 (VDD/VDDQ = 1.5V) supply options to support low-voltage and standard-voltage system designs.
- Package and Mounting — 96-ball BGA package, surface-mount design, and Pb‑free packaging.
- Quality and Compliance — JEDEC DDR3(L) compliant and RoHS compliant; commercial grade with an operating temperature range of 0°C to 85°C.
Typical Applications
- High-throughput Embedded Systems — Provides DDR3(L)-class SDRAM bandwidth and programmable timing for embedded processors and application controllers requiring standardized DRAM interfaces.
- Networking and Communications Equipment — Suitable for buffering and packet processing functions that need synchronous DDR3(L) transfers and banked memory organization.
- Consumer and Industrial Electronics — Fits systems that leverage 1.35V or 1.5V memory rails and require JEDEC-compliant DDR3(L) devices in a compact BGA footprint.
Unique Advantages
- Flexible Voltage Support: Dual VDD/VDDQ options (1.35V and 1.5V) enable deployment in both low-voltage and standard-voltage system designs.
- Configurable Signal Integrity: On-die termination and configurable drive strength improve signal matching for diverse board layouts and timing budgets.
- Precise Impedance Calibration: ZQ calibration ensures DS/ODT impedance accuracy via an external ZQ pad for stable signal performance.
- Broad Timing Flexibility: Multiple CAS, write-latency and write-recovery settings accommodate a wide range of system timing requirements.
- Compact, Industry-Standard Package: 96-ball BGA provides a space-efficient surface-mount solution with Pb‑free compliance for modern PCB assembly.
- Standards-Based Interoperability: JEDEC DDR3(L) compliance supports integration into systems designed around established DDR3(L) specifications.
Why Choose M15T5121632A-DEBG?
The M15T5121632A-DEBG positions itself as a standards-compliant DDR3(L) memory building block delivering 512Mb capacity, flexible voltage operation (1.35V / 1.5V) and high-speed DDR3(L)-1866 class transfers with a 933 MHz clock. Its programmable timing, configurable termination and ZQ calibration make it adaptable to many board-level designs that require reliable synchronous DRAM behavior in a compact BGA package.
This device suits designers and OEMs seeking JEDEC-compliant DDR3(L) memory for general-purpose, high-throughput applications where space, timing flexibility and signal integrity controls are important for long-term system stability and scalability.
Request a quote or submit an availability inquiry to get pricing and lead-time information for the M15T5121632A-DEBG.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
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Revenue: $377.8 Million
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