M15T4G8512A-EFBG2C
| Part Description |
DDR3L SDRAM 4Gb 512M×8 1066MHz 78 Ball BGA |
|---|---|
| Quantity | 1,442 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 78 Ball BGA | Memory Format | DRAM | Technology | DDR3L | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 13.75 ns | Grade | Industrial | ||
| Clock Frequency | 1.066 GHz | Voltage | 1.35V, 1.5V | Memory Type | Volatile | ||
| Operating Temperature | -40°C – 95°C | Write Cycle Time Word Page | 15 ns | Packaging | 78 Ball BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 512M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.36 |
Overview of M15T4G8512A-EFBG2C – DDR3L SDRAM 4Gb 512M×8 1066MHz 78 Ball BGA
The M15T4G8512A-EFBG2C is a 4Gb DDR3(L) SDRAM device from ESMT, organized as 512M × 8 with eight internal banks and an 8n prefetch architecture. It supports DDR3(L)-2133 data rates (1066 MHz clock) and operates from either 1.35V or 1.5V supply rails.
Designed and qualified to JEDEC DDR3(L) specifications and supplied in a 78-ball BGA, this industrial-grade memory device is intended for applications that require JEDEC compliance, extended temperature operation, and high data throughput.
Key Features
- Memory Density & Organization — 4.295 Gbit capacity, internally organized as 512M × 8 with eight banks for parallel access and efficient memory interleaving.
- High-Speed DDR3(L) Interface — Supports DDR3(L)-2133 data rate with a 1.066 GHz clock frequency and double-data-rate transfers on DQ/DQS.
- Dual Supply Compatibility — Operates at SSTL_135 (VDD/VDDQ = 1.35V) or SSTL_15 (VDD/VDDQ = 1.5V) to match system power requirements.
- JEDEC Compliance — Designed to meet JEDEC DDR3(L) standards for predictable timing and interoperability.
- Signal & Timing Controls — Differential clock (CK/CK) and DQS/DQS data strobe pairs; programmable CAS latencies and write latencies, additive latency options, and burst length/configuration controls.
- Data Integrity & Refresh — Auto Refresh and Self Refresh modes, Partial Array Self Refresh (PASR) and Power Down modes for data retention and power savings.
- Calibration & Termination — ZQ calibration for DS/ODT impedance accuracy and configurable on-die termination (RTT_Nom, RTT_WR) and drive strength (DS) settings for system tuning.
- Read/Write Leveling — Write leveling via mode register settings and read leveling via MPR to support reliable source-synchronous interfaces.
- Performance Timing — Typical access time of 13.75 ns and write cycle time (word/page) of 15 ns for responsive memory transactions.
- Package & Thermal Range — 78-ball BGA surface-mount package with industrial operating temperature range of −40°C to 95°C.
- RoHS Compliant — Lead-free/Ball grid array meets RoHS requirements.
Typical Applications
- Industrial Control Systems — Industrial-grade temperature range and JEDEC compliance make this device suitable for controllers and automation equipment requiring reliable DDR3(L) memory.
- Embedded Systems — High-density 4Gb capacity and DDR3(L)-2133 performance support embedded platforms that need compact, high-throughput memory.
- Networking and Telecom Equipment — Parallel interface and configurable termination/timing features help address memory subsystem requirements in communication hardware.
Unique Advantages
- Flexible Voltage Operation: Dual support for 1.35V and 1.5V enables integration into systems with different power domains.
- Extended Temperature Range: Industrial operating range of −40°C to 95°C supports deployment in demanding environmental conditions.
- JEDEC-Conformant Performance: DDR3(L)-2133 support with programmable CAS and latency options provides verifiable timing behavior across designs.
- System Tuning & Signal Integrity: ZQ calibration, configurable on-die termination and drive strength, plus read/write leveling, simplify signal optimization and improve reliability.
- Compact Surface-Mount Package: 78-ball BGA offers a space-efficient footprint for high-density PCB designs.
Why Choose M15T4G8512A-EFBG2C?
The M15T4G8512A-EFBG2C delivers JEDEC-compliant DDR3(L) performance in a compact, industrial-grade form factor. With 4.295 Gbit density, DDR3(L)-2133 throughput, dual-voltage operation, and comprehensive timing and termination programmability, it is positioned for embedded and industrial designs that require dependable, high-speed parallel memory.
Manufactured by ESMT and supplied in a 78-ball BGA package, this device offers long-term design consistency for customers seeking verified DDR3(L) functionality, extended temperature tolerance, and system-level tuning options.
Request a quote or submit your procurement inquiry to initiate pricing and availability information for the M15T4G8512A-EFBG2C. Our team can provide lead-time and sampling details to support evaluation and production planning.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
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