M15T4G8512A-BDBG2S

The M15T4G8512A-BDBG2S is a 4.295 Gbit DDR3(L) SDRAM device organized as 512M × 8 with eight internal banks and an 8n prefetch architecture. It delivers DDR3(L)-1600 class operation (800 MHz CK) in a compact 78‑ball BGA package and is JEDEC DDR3(L) compliant.

Designed for high‑speed synchronous memory applications, this device supports dual voltage operation (1.35 V and 1.5 V), differential clock and DQS signaling, and a range of programmable timing and termination options to match system requirements.

Key Features

• Memory Architecture  4.295 Gbit capacity configured as 64M × 8 I/Os × 8 banks (512M × 8 organization) with 1 KB page size per bank.
• Performance  Supports DDR3(L)-1600 (DDR3(L) 1600 MT/s, 11-11-11) with a clock frequency of 800 MHz, access time of 13.75 ns and write cycle time (word/page) of 15 ns.
• Voltage and Interface  Operates at SSTL_135 and SSTL_15 signaling levels with VDD/VDDQ = 1.35 V (−0.067/+0.1 V) or 1.5 V (±0.075 V); parallel memory interface with differential CK/CK and DQS/DQS.
• Signal Integrity and Calibration  Differential clock and data strobe, configurable drive strength (DS), configurable on‑die termination (RTT_Nom and RTT_WR options), and ZQ calibration (240 Ω ±1%) for impedance accuracy.
• Programmable Timing and Modes  Programmable CAS latency (5–16), CAS write latency (5–12), additive latency options, burst length and type (BL8/BC4), and multiple write‑recovery settings to match system timing.
• Power and Refresh Management  Auto refresh, self refresh, partial array self refresh (PASR), power down and power saving modes to help optimize power consumption in suspended states.
• Package and Thermal  Surface-mount 78‑ball BGA package; specified operating temperature range −40 °C to 105 °C. RoHS compliant.

Typical Applications

• General applications  JEDEC‑compliant DDR3(L) memory for systems requiring 4Gb memory density and DDR3(L)-1600 data rates.
• High‑speed memory subsystems  Use where differential clocking, DQS timing and programmable termination are required for signal integrity at double‑data‑rate operation.
• Compact BGA designs  Suitable for designs needing a high‑density DRAM device in a 78‑ball BGA footprint with surface‑mount assembly.

Unique Advantages

• Dual‑voltage flexibility  Operates at 1.35 V or 1.5 V (SSTL_135 / SSTL_15), enabling compatibility with multiple system power rails.
• JEDEC compliance  Conforms to DDR3(L) JEDEC standards for predictable interoperability in standard DDR3(L) memory architectures.
• Comprehensive timing programmability  Wide CAS and latency options plus burst control allow tight tuning of performance versus timing margins.
• Signal integrity controls  Configurable on‑die termination, drive strength settings, ZQ calibration and differential signaling help maintain signal quality at high data rates.
• Robust operating range  Specified for −40 °C to 105 °C operation, addressing environments that require extended temperature capability.
• Compact package  78‑ball BGA package provides a high‑density memory option suited to space‑constrained PCBs.

Why Choose M15T4G8512A-BDBG2S?

The M15T4G8512A-BDBG2S delivers a JEDEC‑compliant DDR3(L) solution with 4Gb density, flexible voltage operation, and a range of programmable timing and termination features to meet demanding system requirements. Its combination of differential clocking, DQS synchronization, and ZQ calibration supports reliable high‑speed transfers in systems designed for DDR3(L)-1600 operation.

This device is well suited for designers who need predictable DDR3(L) behavior, configurable signal and timing controls, and a compact BGA package. The M15T4G8512A family provides a clear specification set for integration into memory subsystems where verified DDR3(L) compliance and programmable options are required.

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