M15T4G8512A-DEBG2S

The M15T4G8512A-DEBG2S is a 4.295 Gbit DDR3(L) SDRAM device organized as 512M × 8 with an internal eight-bank architecture. It supports DDR3(L)-1866 data rate operation with a 933 MHz clock frequency and is designed for systems requiring high-speed, synchronous parallel memory.

This device supports dual supply operation at 1.35 V and 1.5 V, JEDEC DDR3(L) compliance, and a compact 78-ball BGA package with an extended operating temperature range to support demanding board-level designs.

Key Features

• Memory Architecture Internally configured as an eight-bank DDR3(L) device with a 64M × 8 × 8 organization and external addressing for row/column access; overall organization specified as 512M × 8.
• Performance Rated for DDR3(L)-1866 operation (1866 Mb/sec per pin) and a 933 MHz clock frequency; supports double-data-rate transfers on DQ, DQS and DM.
• Signal and Data Integrity Differential clock (CK/CK) and differential data strobe (DQS/DQS) for source-synchronous transfers, configurable on-die termination (ODT) and drive strength (DS), and ZQ calibration (240 Ω ±1%) for impedance accuracy.
• Programmability and Timing Wide range of programmable timings including CAS latency (5–16), CAS write latency options (5–12), additive latency choices, and selectable write recovery times; burst length and burst type are configurable.
• Power Management Supports SSTL_135 and SSTL_15 interface levels (VDD/VDDQ = 1.35 V or 1.5 V), with standard low-power features including Auto Refresh, Self Refresh, Partial Array Self Refresh (PASR) and Power Down Mode.
• Signal Calibration and Leveling Read and write leveling support via MPR and MR settings to assist system timing calibration for high-speed operation.
• Package and Thermal Surface-mount 78-ball BGA package with operating temperature range of −40 °C to 105 °C for use in thermally demanding board designs.
• Standards Compliance JEDEC DDR3(L) compliant and Pb‑free package options as indicated in ordering information.

Typical Applications

• High-performance memory subsystems — Used as high-throughput DRAM in systems that require DDR3(L)-1866 data rates and flexible timing programmability.
• Embedded and compute modules — Provides parallel SDRAM capacity for embedded processors and FPGA-based designs requiring synchronized, high-speed data transfer.
• Networking and communications equipment — Serves as system memory for buffering and packet processing where deterministic timing and signal integrity features are important.

Unique Advantages

• Dual-voltage support: Operates at 1.35 V or 1.5 V (SSTL_135 / SSTL_15), enabling design flexibility for varying system power rails.
• High sustained data rate: DDR3(L)-1866 capability (1866 Mb/sec per pin) combined with 8n prefetch architecture for high-bandwidth applications.
• Advanced signal control: Configurable on-die termination and drive-strength settings plus ZQ calibration for robust signal integrity tuning.
• Extensive timing programmability: Multiple CAS latency and write-latency options and selectable burst behavior to match diverse system timing requirements.
• Thermal and package suitability: 78-ball BGA surface-mount package with −40 °C to 105 °C operating range for compact, board-level integration.
• JEDEC compliance: Industry-standard DDR3(L) adherence simplifies system validation and integration with JEDEC-compatible memory controllers.

Why Choose M15T4G8512A-DEBG2S?

The M15T4G8512A-DEBG2S combines high data-rate DDR3(L)-1866 performance with flexible voltage and timing options to meet a range of board-level memory needs. Its programmable ODT/DS settings, leveling capabilities and ZQ calibration support system-level signal integrity and timing calibration for reliable high-speed operation.

This device is suited for designers seeking a JEDEC-compliant, high-throughput SDRAM in a compact 78-ball BGA package with extended operating temperature support and multiple power-supply options, enabling straightforward integration into performance-oriented embedded and communications applications.

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