M16U4G16256A-3200

The M16U4G16256A-3200 is an industrial-grade DDR4 SDRAM device from ESMT offering 4.295 Gbit of volatile memory in a 256M × 16 organization. It provides JEDEC-compliant DDR4 performance with a 1.6 GHz clock (DDR4-3200) operating from VDD = VDDQ = 1.2V ±5% and supports extended temperature operation from −40°C to +95°C.

Engineered for industrial and rugged embedded systems, the device delivers high-bandwidth parallel memory with robust timing, refresh and signal-integrity features—packing 8 internal banks, differential clock and DQS signaling, and a 96-ball BGA surface-mount package for board-level integration.

Key Features

• Memory & Organization — 4.295 Gbit DDR4 SDRAM organized as 256M × 16 with 8 internal banks and 2 groups of 4 banks.
• Performance & Timing — Supports 1.6 GHz clock frequency (DDR4-3200), Access Time 13.75 ns, and Write Cycle Time (word page) 15 ns. CAS Latency (CL) and CAS Write Latency (CWL) ranges are supported across multiple timing options to match system requirements.
• Voltage & Power — VDD = VDDQ = 1.2V ±5% with VPP range 2.375V–2.75V. Low-voltage DDR4 operation reduces supply requirements compared to legacy memory technologies.
• Signal Integrity & Interface — Differential clock inputs (CK_t/CK_c), bi-directional differential data strobe (DQS_t/DQS_c), on-die termination (nominal/park/dynamic ODT), and programmable driver strength for improved signal integrity.
• Reliability & Maintenance — ZQ calibration (RZQ = 240 Ω ±1%), adjustable internal VREFDQ, write CRC for high-speed DQ error detection, CA parity for command/address error reporting, and support for fine-granularity and temperature-controlled refresh.
• Advanced DDR4 Features — Supports write leveling, programmable preamble, gear-down mode, PPR/sPPR, Data Bus Inversion (DBI) for x16, Data Mask (DM) for write operations, and Per DRAM Addressability (PDA).
• Refresh & Low-Power Modes — Average refresh period configurable (7.8 μs at −40°C to +85°C; 3.9 μs at >+85°C to +95°C), Low Power Auto Self Refresh (LPASR), self-refresh abort and maximum power-down mode to minimize idle power.
• Package & Mounting — 96-ball BGA supplier device package with surface-mount mounting suitable for automated PCB assembly in industrial hardware.
• Standards & Qualification — JEDEC JESD-79-4 compliance for DDR4 SDRAM operation and timing interoperability.

Typical Applications

• Industrial Control & Automation — Extended-temperature DDR4 memory for controllers, PLCs and factory automation hardware that require reliable operation from −40°C to +95°C.
• Rugged Embedded Systems — Memory for embedded platforms and appliances where JEDEC-compliant DDR4 performance and surface-mount BGA packaging support compact, robust designs.
• Data Acquisition & Instrumentation — High-bandwidth parallel memory suitable for systems that need predictable refresh and timing behaviors across wide temperature ranges.

Unique Advantages

• Extended temperature tolerance: Rated for −40°C to +95°C operation, enabling use in harsh and industrial environments.
• Low-voltage DDR4 operation: VDD = VDDQ = 1.2V ±5% reduces supply overhead while maintaining DDR4 performance characteristics.
• High-bandwidth capability: Supports DDR4-3200 operation (1.6 GHz clock) for systems that require increased data throughput.
• Comprehensive signal and error management: On-die termination, ZQ calibration, CA parity and write CRC improve signal integrity and help detect interface errors.
• Flexible timing and refresh control: Wide range of CAS and CWL options, fine-granularity refresh and temperature-controlled refresh periods allow tuning for performance or power.
• Industry-standard package and compliance: 96-ball BGA surface-mount package with JEDEC JESD-79-4 compliance simplifies integration into standard DDR4 memory subsystems.

Why Choose M16U4G16256A-3200?

The M16U4G16256A-3200 positions itself as a robust, JEDEC-compliant DDR4 memory option for industrial and rugged embedded designs that demand extended temperature operation, flexible timing, and standard DDR4 signal features. Its 256M × 16 organization, extensive latency and refresh support, and the inclusion of signal-integrity and error-detection mechanisms provide designers with practical controls for balancing bandwidth, power and reliability.

This device is well suited for engineers specifying industrial-grade DDR4 memory who need a vendor-backed SDRAM with configurable timing, on-die calibration and surface-mount BGA packaging for compact board layouts and automated assembly.

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