M16U4G8512A-3200(2Z)

The M16U4G8512A-3200(2Z) is a DDR4 SDRAM device from ESMT, organized as 512M × 8 for a total density of 4.295 Gbit. It implements DDR4 architecture with a 1.2 V JEDEC-standard VDD/VDDQ power supply and high-speed I/O to support modern industrial memory requirements.

Designed for industrial-grade applications, this prefetched DDR4 device offers high-density, parallel memory interface performance with JEDEC qualification and a compact 78-ball BGA surface-mount package for board-level integration.

Key Features

• DDR4 Architecture — DDR4 SDRAM technology with 8-bit prefetch and differential clock inputs (CK_t/CK_c) for high-speed operation.
• Density & Organization — 4.295 Gbit total density, organized as 512M × 8 to support dense memory footprints.
• Performance — Clock frequency 1.6 GHz (DDR4-3200 effective), access time 13.75 ns and write cycle time (word page) 15 ns for responsive memory transactions.
• Power — JEDEC-standard nominal VDD = VDDQ = 1.2V (±5%); VPP range 2.375V to 2.75V as specified for internal operation.
• Advanced DDR4 Features — 16 internal banks (4 bank groups), on-die termination (ODT), ZQ calibration, write CRC, write leveling, command/address parity and programmable CAS latencies.
• Package & Mounting — 78-ball BGA surface-mount package optimized for compact board designs and high-density module integration.
• Industrial Grade & Qualification — Grade: Industrial with JEDEC compliance; operating range specified in product data to suit industrial deployments.

Typical Applications

• Industrial Control & Automation — Provides robust, JEDEC-compliant DDR4 memory for controllers, PLC modules and automation equipment requiring industrial-grade components.
• Networking & Telecommunications — Suitable for buffering and packet memory in networking line cards and telecom platforms that demand high-speed parallel memory interfaces.
• Embedded Computing & FPGA Systems — Used as system memory for embedded boards and FPGA-based designs that need high-density, low-voltage DDR4 SDRAM.

Unique Advantages

• Low-voltage operation: Nominal VDD/VDDQ = 1.2V reduces power consumption compared with legacy memory voltages while matching DDR4 system requirements.
• High effective data rate: 1.6 GHz clock (DDR4-3200 effective) supports high-throughput applications and responsive system performance.
• Comprehensive DDR4 feature set: Includes ODT, ZQ calibration, 16 internal banks, write CRC, and multiple CAS/CWL/AL options for flexible timing and system-level signal integrity.
• Industrial temperature capability: Specified operating range supports deployment in industrial environments where extended temperature tolerance is required.
• Compact, production-ready package: 78-ball BGA surface-mount package enables dense board layouts and standard assembly processes.

Why Choose M16U4G8512A-3200(2Z)?

The M16U4G8512A-3200(2Z) delivers JEDEC-compliant DDR4 performance in a compact 78-ball BGA footprint, combining 4.295 Gbit density with a 1.2V low-voltage architecture and comprehensive DDR4 features such as ODT, ZQ calibration and multiple latency options. Its industrial grade and parallel interface make it well suited for embedded systems, networking equipment and other industrial applications that require reliable, high-speed memory.

Engineered and documented by ESMT, this DDR4 device provides a verifiable specification set for designers and procurement teams targeting long-life industrial designs that leverage standard DDR4 interfaces and timing flexibility.

Request a quote or submit an inquiry to purchase M16U4G8512A-3200(2Z) and evaluate how this DDR4 SDRAM can meet your industrial memory requirements.