M16U4G16256A-3200(2Z)

4Gb DDR4 SDRAM Auto.
Part Description

DDR4 1.2V

Quantity 1,838 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusActive
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package96 Ball BGAMemory FormatDRAMTechnologyDDR4 SDRAM
Memory Size4 GbitAccess Time13.75 nsGradeAutomotive
Clock Frequency1.6 GHzVoltage2.5VMemory TypeVolatile
Operating Temperature-40°C – 105°CWrite Cycle Time Word Page15 nsPackaging96 Ball BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization256M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.36

Overview of M16U4G16256A-3200(2Z) – DDR4 1.2V

The M16U4G16256A-3200(2Z) is a 4.295 Gbit DDR4 SDRAM device organized as 256M × 16. Built to JEDEC specifications, it implements DDR4 architecture with parallel memory interface and supports high-speed operation up to a 1.6 GHz clock (DDR4-3200 data rate configuration).

Designed for systems that require dense, high-throughput volatile memory in a compact package, this surface-mount 96-ball BGA device provides a broad operating temperature range and a feature set that supports robust signal integrity and memory management.

Key Features

  • Memory Architecture — 4.295 Gbit capacity organized as 256M × 16 delivering a DDR4 SDRAM solution with an 8-bit prefetch for high-speed data transfer.
  • Performance — 1.6 GHz clock frequency (DDR4-3200 ordering configuration) with access time listed at 13.75 ns and a write cycle time (word page) of 15 ns for responsive memory transactions.
  • JEDEC Compliance — JEDEC-qualified DDR4 SDRAM feature set and timing (multiple CAS latency and CWL options) to support standard DDR4 controller interfaces.
  • Power and Voltage — JEDEC standard power supply: VDD = VDDQ = 1.2V ±5% with VPP range detailed in the device specification for proper device programming and operation.
  • Signal Integrity & Calibration — On-die features including ZQ calibration, nominal/park/dynamic On-Die Termination (ODT), DLL alignment of DQ/DQS to CK, and programmable drive strengths to optimize high-speed signaling.
  • Reliability & Data Integrity — Support for Write CRC, Command/Address parity, Data Bus Inversion (DBI) on x16 devices, Data Mask (DM), and per-DRAM addressability for fine-grained mode control.
  • Advanced DDR4 Functions — Write leveling, fine granularity refresh, temperature-controlled refresh modes (TCR), low-power auto self-refresh (LP ASR), gear-down modes and programmable preamble for flexible system integration.
  • Package & Mounting — 96-ball BGA package, surface-mount mounting type suitable for compact board designs.
  • Operating Range — Specified operating temperature from −40 °C to +105 °C to support a wide range of thermal environments.

Typical Applications

  • High-speed buffering and frame storage — Use the 4.295 Gbit density and DDR4-3200 configuration for transient data storage and buffering in high-throughput data paths.
  • Embedded memory for performance systems — Integrate as main or auxiliary volatile memory where JEDEC-compliant DDR4 operation and x16 organization are required.
  • Industrial electronics — Suitable for industrial boards that require dense SDRAM in a compact 96-ball BGA package across a broad temperature range.

Unique Advantages

  • Dense x16 organization: 256M × 16 layout provides 4.295 Gbit capacity in a single device, simplifying board-level memory scaling.
  • JEDEC-standard compatibility: Broad CAS latency and CWL options plus standard DDR4 behaviors reduce integration effort with compliant memory controllers.
  • On-die signal management: ZQ calibration, ODT and DLL support improve signal integrity at high data rates without extra external components.
  • Data integrity features: Write CRC, CA parity and DBI (x16) provide additional error-detection and power optimization for high-speed operation.
  • Compact BGA packaging: 96-ball BGA surface-mount package enables high-density board designs while retaining accessible thermal and layout characteristics.

Why Choose M16U4G16256A-3200(2Z)?

The M16U4G16256A-3200(2Z) positions itself as a JEDEC-compliant DDR4 SDRAM option delivering 4.295 Gbit density, flexible timing options and built-in signal-integrity and data-integrity features. Its combination of high clock capability, comprehensive DDR4 feature set and compact 96-ball BGA package makes it suitable for designs that demand dense, high-throughput volatile memory with standardized timing and control.

This device is well suited to engineers and procurement teams building systems that require verified DDR4 behavior, configurable latency/CWL settings and on-die features to manage high-speed interfaces while minimizing external component count.

Request a quote or contact sales to check availability, pricing and delivery options for the M16U4G16256A-3200(2Z).

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