M16U4G16256A-3200(2Z)
| Part Description |
DDR4 1.2V |
|---|---|
| Quantity | 1,838 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 96 Ball BGA | Memory Format | DRAM | Technology | DDR4 SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 13.75 ns | Grade | Automotive | ||
| Clock Frequency | 1.6 GHz | Voltage | 2.5V | Memory Type | Volatile | ||
| Operating Temperature | -40°C – 105°C | Write Cycle Time Word Page | 15 ns | Packaging | 96 Ball BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 256M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.36 |
Overview of M16U4G16256A-3200(2Z) – DDR4 1.2V
The M16U4G16256A-3200(2Z) is a 4.295 Gbit DDR4 SDRAM device organized as 256M × 16. Built to JEDEC specifications, it implements DDR4 architecture with parallel memory interface and supports high-speed operation up to a 1.6 GHz clock (DDR4-3200 data rate configuration).
Designed for systems that require dense, high-throughput volatile memory in a compact package, this surface-mount 96-ball BGA device provides a broad operating temperature range and a feature set that supports robust signal integrity and memory management.
Key Features
- Memory Architecture — 4.295 Gbit capacity organized as 256M × 16 delivering a DDR4 SDRAM solution with an 8-bit prefetch for high-speed data transfer.
- Performance — 1.6 GHz clock frequency (DDR4-3200 ordering configuration) with access time listed at 13.75 ns and a write cycle time (word page) of 15 ns for responsive memory transactions.
- JEDEC Compliance — JEDEC-qualified DDR4 SDRAM feature set and timing (multiple CAS latency and CWL options) to support standard DDR4 controller interfaces.
- Power and Voltage — JEDEC standard power supply: VDD = VDDQ = 1.2V ±5% with VPP range detailed in the device specification for proper device programming and operation.
- Signal Integrity & Calibration — On-die features including ZQ calibration, nominal/park/dynamic On-Die Termination (ODT), DLL alignment of DQ/DQS to CK, and programmable drive strengths to optimize high-speed signaling.
- Reliability & Data Integrity — Support for Write CRC, Command/Address parity, Data Bus Inversion (DBI) on x16 devices, Data Mask (DM), and per-DRAM addressability for fine-grained mode control.
- Advanced DDR4 Functions — Write leveling, fine granularity refresh, temperature-controlled refresh modes (TCR), low-power auto self-refresh (LP ASR), gear-down modes and programmable preamble for flexible system integration.
- Package & Mounting — 96-ball BGA package, surface-mount mounting type suitable for compact board designs.
- Operating Range — Specified operating temperature from −40 °C to +105 °C to support a wide range of thermal environments.
Typical Applications
- High-speed buffering and frame storage — Use the 4.295 Gbit density and DDR4-3200 configuration for transient data storage and buffering in high-throughput data paths.
- Embedded memory for performance systems — Integrate as main or auxiliary volatile memory where JEDEC-compliant DDR4 operation and x16 organization are required.
- Industrial electronics — Suitable for industrial boards that require dense SDRAM in a compact 96-ball BGA package across a broad temperature range.
Unique Advantages
- Dense x16 organization: 256M × 16 layout provides 4.295 Gbit capacity in a single device, simplifying board-level memory scaling.
- JEDEC-standard compatibility: Broad CAS latency and CWL options plus standard DDR4 behaviors reduce integration effort with compliant memory controllers.
- On-die signal management: ZQ calibration, ODT and DLL support improve signal integrity at high data rates without extra external components.
- Data integrity features: Write CRC, CA parity and DBI (x16) provide additional error-detection and power optimization for high-speed operation.
- Compact BGA packaging: 96-ball BGA surface-mount package enables high-density board designs while retaining accessible thermal and layout characteristics.
Why Choose M16U4G16256A-3200(2Z)?
The M16U4G16256A-3200(2Z) positions itself as a JEDEC-compliant DDR4 SDRAM option delivering 4.295 Gbit density, flexible timing options and built-in signal-integrity and data-integrity features. Its combination of high clock capability, comprehensive DDR4 feature set and compact 96-ball BGA package makes it suitable for designs that demand dense, high-throughput volatile memory with standardized timing and control.
This device is well suited to engineers and procurement teams building systems that require verified DDR4 behavior, configurable latency/CWL settings and on-die features to manage high-speed interfaces while minimizing external component count.
Request a quote or contact sales to check availability, pricing and delivery options for the M16U4G16256A-3200(2Z).
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A