M15T2G8256A-BDBG2R

The M15T2G8256A-BDBG2R is a 2Gb DDR3(L) SDRAM device from ESMT, implemented with double-data-rate architecture and an eight-bank internal organization. It is designed as a 256M × 8 memory organized internally as 32Mbit × 8 I/Os × 8 banks, supporting synchronous, source‑synchronous data transfers.

This device supports DDR3(L)-1600 operation (800 MHz clock), dual supply options (1.35V and 1.5V), JEDEC DDR3(L) compliance and a compact 78-ball BGA surface-mount package, making it suitable for DDR3(L)-compatible memory subsystems and general high-speed memory applications.

Key Features

• Capacity & Organization — 2.147 Gbit total density, organized as 256M × 8 and internally as 32M × 8 I/Os × 8 banks for efficient banked access.
• Performance — 800 MHz differential clock (DDR3(L)-1600) operation with access time of 13.75 ns and word/page write cycle time of 15 ns.
• Interface — Differential clock inputs (CK/CK) and differential data strobe pairs (DQS/DQS) with double-data-rate signaling on DQ, DQS and DM.
• Power & Voltage — Supports SSTL_135 (VDD/VDDQ = 1.35V) and SSTL_15 (VDD/VDDQ = 1.5V), enabling dual-voltage system integration.
• JEDEC Compliance & Packaging — JEDEC DDR3(L) compliant device in a 78-ball BGA surface-mount package; Pb-free.
• Programmability — Programmable CAS latencies (5–14), CAS write latencies (5–10), additive latency options, multiple write recovery settings, burst-type and burst-length controls.
• Signal Integrity & Calibration — Configurable drive strength (DS), configurable on-die termination (ODT), ZQ calibration for DS/ODT via an external ZQ pad (240 Ω ±1%).
• Data Integrity & Power Management — Supports Auto Refresh, Self Refresh, Partial Array Self Refresh (PASR), and Power Down modes for data retention and power savings.
• Reliability Range — Operating temperature range from −40 °C to 105 °C for deployment in thermally demanding environments.

Typical Applications

• DDR3(L)-compatible memory subsystems — Acts as a high-speed synchronous DRAM component for systems designed around JEDEC DDR3(L) standards.
• General high-speed memory tasks — Suitable for general applications requiring double-data-rate transfers, multiple banks and programmable timing parameters.
• Compact board-level implementations — The 78-ball BGA surface-mount package supports compact, high-density PCB designs.

Unique Advantages

• Dual-voltage flexibility: Native support for 1.35V and 1.5V operation allows integration into systems with different DDR3(L) power domains.
• Wide timing programmability: Extensive CAS and write-latency options let designers tune performance and timing for system compatibility.
• Robust signal control: Configurable DS and ODT plus ZQ calibration enable improved signal integrity and impedance accuracy.
• Power management modes: PASR, Power Down, Self Refresh and Auto Refresh options reduce active and standby power as system needs change.
• JEDEC compliance and Pb-free package: Standard compliance and a Pb-free 78-ball BGA package simplify qualification and assembly processes.
• Extended temperature range: −40 °C to 105 °C operation supports deployment where wider thermal margins are required.

Why Choose M15T2G8256A-BDBG2R?

The M15T2G8256A-BDBG2R delivers a JEDEC-compliant DDR3(L) memory option with flexible voltage support, extensive timing programmability and signal integrity controls. Its 2Gb density and eight-bank architecture provide the memory organization and performance tuning needed for DDR3(L) system designs.

This device is suited for designers and procurement teams seeking a compact 78-ball BGA DDR3(L) SDRAM with power management features, configurable termination and an extended operating temperature range—providing a stable, standards-aligned memory building block for a variety of DDR3(L) implementations.

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