M15T1G1664A (2Z)

1Gb DDR SDRAM Ind.
Part Description

DDRIII SDRAM 1.35V/ 1.5V

Quantity 1,374 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusActive
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package96 BAll BGAMemory FormatDRAMTechnologyDDR3 SDRAM
Memory Size1 GbitAccess Time13.91 nsGradeIndustrial
Clock Frequency1.066 GHzVoltage1.5VMemory TypeVolatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page15 nsPackaging96 BAll BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization64M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.32

Overview of M15T1G1664A (2Z) – DDRIII SDRAM 1.35V/ 1.5V

The M15T1G1664A (2Z) is a 1.074 Gbit DDR3 SDRAM device from ESMT designed for industrial-grade memory applications. As a 64M × 16 DDR3 DRAM in a 96-ball BGA surface-mount package, it delivers parallel-interface memory capacity and timing characteristics suited for embedded and industrial systems.

Key value derives from JEDEC qualification, a -40 °C to 85 °C operating range, and a clock frequency specification of 1.066 GHz, providing predictable performance and deployment-ready temperature tolerance for demanding environments.

Key Features

  • Memory Architecture — DDR3 SDRAM technology organized as 64M × 16 for a total density of 1.074 Gbit, implemented as volatile DRAM for system working memory.
  • Performance — Clock frequency rated at 1.066 GHz with an access time of 13.91 ns and a write cycle time (word/page) of 15 ns, providing defined timing for system designers.
  • Power — Specified supply voltage: 1.5 V, appropriate for DDR3-class power domains.
  • Interface — Parallel memory interface for direct connection to memory controllers supporting DDR3 signaling.
  • Package & Mounting — 96 Ball BGA package, surface-mount mounting type for compact board-level integration.
  • Industrial Qualification & Temperature — Grade: Industrial with JEDEC qualification and an operating temperature range of -40 °C to 85 °C.
  • Compliance — RoHS compliant to meet environmental and materials requirements.

Typical Applications

  • Industrial Control Systems — Provides working memory for controllers and embedded processors that require JEDEC-qualified DRAM with extended temperature support.
  • Embedded Systems — Used as system DRAM in compact embedded designs that need a 1.074 Gbit DDR3 memory organized as 64M × 16.
  • Networking and Communications Gear — Suitable for buffering and temporary storage in networking equipment where defined timing and a robust temperature range are required.

Unique Advantages

  • Industrial Temperature Range: Rated from -40 °C to 85 °C, enabling deployment in temperature-challenging environments.
  • JEDEC Qualification: Conforms to JEDEC standards, supporting predictable integration into designs that rely on industry-defined DRAM behavior.
  • Compact BGA Footprint: 96 Ball BGA surface-mount package minimizes board area while supporting high-density memory placement.
  • Defined Timing Characteristics: 1.066 GHz clock frequency with 13.91 ns access time and 15 ns write cycle time for consistent system-level timing design.
  • RoHS Compliant: Meets environmental material requirements for regulated markets and long-term procurement.

Why Choose M15T1G1664A (2Z)?

The M15T1G1664A (2Z) positions itself as a JEDEC-qualified DDR3 SDRAM device offering a clear set of performance and reliability parameters: a 1.074 Gbit density, 1.066 GHz clock rating, and industrial operating range. Its 96-ball BGA package and surface-mount form factor enable compact integration into embedded and industrial boards.

This device is suited to designers and procurement teams building systems that require defined DRAM timing, extended temperature tolerance, and compliance with RoHS and JEDEC standards, delivering a stable memory building block for long-term deployments.

Request a quote or submit an inquiry for pricing and availability of the M15T1G1664A (2Z) to start specifying this DDR3 SDRAM device in your next design.

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