M15F1G1664A-DEBG2S
| Part Description |
DDR3 SDRAM 1Gb (64M × 16) 933MHz, 96 Ball BGA |
|---|---|
| Quantity | 1,083 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 96 Ball BGA | Memory Format | DRAM | Technology | DDR3 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 13.91 ns | Grade | Commercial | ||
| Clock Frequency | 933 MHz | Voltage | 1.5V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 85°C | Write Cycle Time Word Page | 15 ns | Packaging | 96 Ball BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 64M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.32 |
Overview of M15F1G1664A-DEBG2S – DDR3 SDRAM 1Gb (64M × 16) 933MHz, 96 Ball BGA
The M15F1G1664A-DEBG2S is a 1Gb DDR3 SDRAM device organized as 64M × 16 with eight internal banks. It implements double-data-rate synchronous DRAM architecture with differential clock and data strobe, designed for general-purpose DDR3 applications.
This device supports a 1.5V supply (SSTL_15), operates at a 933 MHz clock (DDR3-1866, 13-13-13 ordering), and is offered in a 96‑ball BGA surface‑mount package with commercial temperature range (0 °C to 85 °C).
Key Features
- Memory Architecture Organized as 64M × 16 with 8 banks and a 2KB page size per bank; internally configured as 8Mbit × 16 × 8 bank devices.
- Performance 933 MHz clock frequency (DDR3-1866 data rate for this part number) with 8n prefetch architecture to support high-rate double-data-rate transfers.
- Interface and Signaling Differential clock (CK/CK), differential data strobe (DQS/DQS), SSTL_15 signaling and parallel memory interface for synchronous operation.
- Programmable Timing and Burst Programmable CAS latency (6–14), CAS write latency (5–10), additive latency options, burst length and burst type control, and selectable write recovery times.
- Power and Low‑Power Modes Single 1.5V (±0.075V) supply with Auto Refresh, Self Refresh, Partial Array Self Refresh (PASR), and Power Down modes to manage power consumption.
- Signal Integrity and Calibration Configurable output driver strength (DS), on‑die termination (RTT_Nom / RTT_WR) options, ZQ calibration for impedance accuracy, and support for write/read leveling.
- Package and Environmental 96‑ball BGA surface‑mount package, commercial operating range 0 °C to 85 °C, and RoHS compliant.
- Standards and Qualification JEDEC DDR3 compliant.
Typical Applications
- General‑purpose system memory DDR3 architecture and DDR3-1866 data rate make this device suitable for general DDR3 memory requirements in a wide range of systems.
- Surface‑mount BGA designs 96‑ball BGA package for compact board layouts and surface‑mount assembly processes.
- Commercial‑grade electronics Commercial temperature range (0 °C to 85 °C) for standard commercial environment deployments.
Unique Advantages
- Flexible timing configuration: Wide programmable options for CAS latency, write recovery, additive latency and burst settings to match system timing requirements.
- Robust signal management: Differential CK/DQS signaling, configurable driver strength and on‑die termination plus ZQ calibration help maintain signal integrity.
- Low‑voltage DDR3 operation: Single 1.5V supply (SSTL_15) consistent with JEDEC DDR3 specifications.
- Power management features: Multiple refresh and power‑down modes, including PASR and self refresh, to support reduced power states.
- Compact BGA package: 96‑ball BGA surface‑mount package supports space‑efficient board designs.
- Standards compliance and environmental readiness: JEDEC DDR3 compliance and RoHS status simplify qualification and regulatory readiness for commercial products.
Why Choose M15F1G1664A-DEBG2S?
The M15F1G1664A-DEBG2S combines a 1Gb DDR3 organization with flexible timing, programmable signal and termination options, and low‑voltage SSTL_15 operation to deliver a straightforward DDR3 memory building block for commercial designs. Its 96‑ball BGA package and surface‑mount mounting support compact board layouts while JEDEC compliance and RoHS status align with common development and manufacturing requirements.
This device is suited for designers requiring configurable DDR3 SDRAM with a defined commercial temperature range and industry‑standard signaling; its programmable features and signal integrity controls enable integration into a variety of general‑purpose DDR3 memory implementations.
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Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
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