M15F1G1664A-1866(2S)

The M15F1G1664A-1866(2S) is a 1.074 Gbit DDR3 SDRAM device from ESMT organized as 64M × 16 with an eight-bank architecture. It implements DDR3 double-data-rate operation with differential clock and data-strobe signaling and is designed for general high-speed memory applications.

This device operates from a 1.5V supply and is JEDEC DDR3 compliant, offering programmable timing and on-die features useful for commercial-grade system designs that require compact BGA packaging and industry-standard memory interfaces.

Key Features

• Core / Architecture 8n prefetch DDR3 architecture with eight internal banks and double-data-rate transfers on DQ, DQS and DM for synchronous high-speed operation.
• Memory Organization 1.074 Gbit density organized as 64M × 16 providing a page size of 2 KB per bank and parallel memory interface.
• Performance Rated with a clock frequency of 933 MHz for DDR3-1866 operation and listed timing options consistent with DDR3-1866 (13-13-13) performance.
• Power SSTL_15 signaling with VDD/VDDQ = 1.5V (±0.075V) for standard DDR3 power integration and power-saving modes including auto refresh, self refresh and power down.
• Programmability & Timers Configurable CAS latency, CAS write latency, additive latency, write recovery time, burst type and burst length to adapt timing to system requirements.
• Signal Integrity & Calibration Differential CK/CK and DQS/DQS interfaces, configurable drive strength and on-die termination (RTT_Nom, RTT_WR), plus ZQ calibration for impedance accuracy.
• Reliability & Refresh Auto refresh, self refresh, partial array self refresh (PASR) and read/write leveling support (write leveling via mode registers; read leveling via MPR).
• Package & Mounting 96‑ball BGA package supplied for surface-mount assembly, enabling compact board-level integration.
• Operating Range & Compliance Commercial grade with JEDEC qualification, RoHS compliant and an operating temperature range of 0°C to 85°C.

Typical Applications

• High-speed system memory — For general high-speed DDR3 memory applications requiring a 1.074 Gbit density and 64M × 16 organization.
• Commercial embedded systems — For commercial-grade designs operating within 0°C to 85°C that need JEDEC-compliant DDR3 memory.
• BGA surface-mount designs — For compact board layouts that use a 96‑ball BGA package and standard surface-mount assembly flows.

Unique Advantages

• JEDEC-compliant DDR3 operation: Ensures predictable timing and interoperability with DDR3 system interfaces through standard signaling and timing options.
• Flexible timing and mode programmability: Multiple CAS latencies, write latencies, additive latencies and write recovery settings provide system-level timing optimization.
• Signal integrity controls: Configurable drive strength and on-die termination plus ZQ calibration support stable high-speed operation and impedance matching.
• Power management features: Support for auto/self refresh, PASR and power-down modes helps reduce active and standby power in system implementations.
• Compact BGA footprint: 96‑ball BGA in a surface-mount format simplifies board placement for space-constrained designs.
• Commercial-grade reliability: JEDEC qualification and RoHS compliance with a specified 0°C to 85°C operating range suitable for many commercial applications.

Why Choose M15F1G1664A-1866(2S)?

The M15F1G1664A-1866(2S) combines a 1.074 Gbit DDR3 architecture with standard 1.5V SSTL signaling and comprehensive programmability to fit commercial systems that require compact high-speed memory. Its JEDEC compliance, signal integrity features and power-management modes provide the operational controls designers need when integrating DDR3 memory into scaled designs.

This device is well suited to engineers and procurement teams specifying 64M × 16 DDR3 memory in a 96‑ball BGA for commercial embedded products, offering a balance of density, programmability and board-level integration for long-term deployment.

Request a quote or submit a purchase inquiry to obtain pricing, availability and lead-time information for the M15F1G1664A-1866(2S).