M15F1G1664A-2133(2S)

1Gb DDR SDRAM
Part Description

DDRIII SDRAM 1.5V

Quantity 1,643 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusActive
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package96 BAll BGAMemory FormatDRAMTechnologyDDR3 SDRAM
Memory Size1 GbitAccess Time13.91 nsGradeCommercial
Clock Frequency1.066 GHzVoltage1.5VMemory TypeVolatile
Operating Temperature0°C – 85°CWrite Cycle Time Word Page15 nsPackaging96 BAll BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization64M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.32

Overview of M15F1G1664A-2133(2S) – DDRIII SDRAM 1.5V

The M15F1G1664A-2133(2S) is a 1.074 Gbit DDR3 SDRAM device from ESMT designed on an 8-bank, 8n prefetch architecture. It delivers double-data-rate transfers up to DDR3-2133 (1.066 GHz clock / 2133 Mb/s per pin) in a 64M × 16 organization and is intended for general high-speed memory applications.

Built for systems requiring JEDEC-compliant DDR3 operation at a 1.5V supply, this surface-mount 96-ball BGA device combines programmable timing, signal integrity features and power-saving modes to support robust memory subsystem designs within commercial temperature ranges (0 °C to 85 °C).

Key Features

  • Core / Memory Architecture 8Mbit × 16 I/Os × 8 banks DDR3 SDRAM organized as 64M × 16, delivering 1.074 Gbit density with a 2KB page size per bank.
  • Performance Supports double-data-rate transfers up to DDR3-2133 (1.066 GHz clock frequency / 2133 Mb/s per pin) with programmable CAS latencies and burst lengths for timing flexibility.
  • Timing and Access Access time 13.91 ns and write cycle time (word/page) 15 ns; programmable CAS latency, CAS write latency, additive latency and write recovery time options per device MR settings.
  • Interface and Signal Integrity Differential clock (CK/CK) and data strobe (DQS/DQS); double-data-rate on DQs, DQS and DM; configurable drive strength (DS) and on-die termination (RTT) for system compatibility.
  • Data Integrity and Calibration Supports Auto Refresh, Self Refresh, Partial Array Self Refresh (PASR), ZQ calibration for DS/ODT impedance accuracy and read/write leveling features to aid signal synchronization.
  • Power Management Single 1.5V (±0.075V) supply with Power Down and Power Saving modes to reduce standby energy; self refresh temperature range configurable.
  • Package and Mounting Surface-mount 96-ball BGA package suitable for compact board-level integration in commercial designs.
  • Qualification and Compliance JEDEC DDR3 compliant and RoHS compliant (Pb-free package options noted in ordering information).

Typical Applications

  • Embedded memory subsystems — Use as primary DRAM in systems that require up to 1.074 Gbit density and DDR3-2133 bandwidth for data buffering and working memory.
  • Consumer and computing devices — Implement in designs that need JEDEC-compliant DDR3 performance at a 1.5V supply and programmable timing to match system requirements.
  • Networking and communications equipment — Suitable for packet buffering and high-speed data transfer roles that benefit from DDR3 data rates and on-die termination control.

Unique Advantages

  • High-speed DDR3-2133 capability: Delivers up to 2133 Mb/s per pin (1.066 GHz clock), enabling higher memory throughput where needed.
  • Flexible timing and programmability: Multiple CAS latencies, CAS write latency, additive latency and write recovery settings allow tuning to system timing requirements.
  • Signal integrity controls: Configurable DS and RTT options plus ZQ calibration and read/write leveling simplify integration across different platform designs.
  • Power-aware operation: Built-in Auto Refresh, Self Refresh, PASR and Power Down modes provide on-die mechanisms to reduce power in idle or low-activity states.
  • Standard JEDEC compliance: Ensures predictable behavior and compatibility within JEDEC DDR3 ecosystems and design flows.
  • Compact BGA package: 96-ball BGA surface-mount package supports compact board layouts while delivering required I/O count and signal routing.

Why Choose M15F1G1664A-2133(2S)?

The M15F1G1664A-2133(2S) positions itself as a JEDEC-compliant DDR3 memory option that combines 1.074 Gbit density, DDR3-2133 data rates and a flexible feature set for timing, signal integrity and power management. Its 96-ball BGA package and 1.5V supply make it suitable for commercial designs that require high-speed DDR3 performance and board-level integration.

This device is well suited for engineers and procurement teams designing systems that need verified DDR3 functionality, programmable timing options and system-level signal controls. The combination of on-die termination, ZQ calibration and refresh modes supports reliable operation across a range of DDR3 implementations.

Request a quote or submit a purchase inquiry to receive pricing and availability for the M15F1G1664A-2133(2S) DDR3 SDRAM. Provide your required quantity, target lead time and any qualification needs to expedite your request.

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