M14D5121632A-2.5BBG2S

The M14D5121632A-2.5BBG2S is a DDR2 SDRAM device in a 84-ball FBGA thin package, targeted for commercial memory applications requiring DDR2-800 performance at a 1.8V supply. It implements a pipelined double-data-rate architecture with on-chip DLL and differential clock inputs to support high-speed parallel memory interfaces.

This device is organized as 32M × 16 with a specified memory size of 536.9 Mbit, a 400 MHz clock frequency (DDR2-800 data rate), and is JEDEC-compliant for straightforward integration into DDR2-based system designs.

Key Features

• Core Architecture Internal pipelined double-data-rate architecture delivering two data accesses per clock cycle; on-chip DLL and differential clock inputs (CLK and CLK̄) for timing alignment.
• Memory Organization & Performance Organized as 32M × 16 (536.9 Mbit) with a 400 MHz clock (DDR2-800). Supports burst lengths of 4 and 8, sequential and interleave burst types, and CAS latencies from 3 to 9.
• Data and Strobe Bi-directional differential data strobe (DQS/DQS̄) with edge alignment for READ and center alignment for WRITE; separate LDQS/UDQS pairs for DQ0–DQ7 and DQ8–DQ15. DQS can be disabled for single-ended operation.
• Signal Integrity & On-Die Controls On-Die-Termination (ODT) with selectable 50/75/150 Ω options, Off-Chip-Driver (OCD) impedance adjustment, and duty cycle corrector to improve signal quality at high data rates.
• Power and Voltage VDD and VDDQ nominal 1.8V (specified 1.7V–1.9V); VDD = 1.8V ±0.1V per datasheet ordering details.
• Refresh and Self-Refresh Standard refresh: 8192 cycles/64 ms (7.8 μs interval) at 0°C to 85°C and 8192 cycles/32 ms (3.9 μs interval) at >85°C to 95°C. Supports auto & self refresh and Partial Array Self Refresh (PASR).
• Package & Mounting 84-FBGA (8 mm × 12.5 mm) thin body, 1.0 mm max height for the -2.5BBG2S option, 0.8 mm ball pitch; surface-mount package suitable for compact board designs.
• Standards & Qualification JEDEC-compliant DDR2 SDRAM features and commercial grade operation with an operating temperature range of 0°C to 95°C; RoHS compliant.

Typical Applications

• DDR2 Memory Complement for System Boards Provides 512Mbit-class DDR2-800 memory in a compact 84-FBGA package for system-level memory arrays and board-level expansions.
• Embedded and Commercial Electronics Suited for commercial-grade embedded platforms that require standard JEDEC DDR2 timing, 1.8V operation, and a compact BGA footprint.
• High-Density Module Designs Useful where 32M × 16 organization and thin FBGA packaging enable denser memory layouts on constrained PCBs.

Unique Advantages

• DDR2-800 Performance at 1.8V Delivers DDR2-800 timing (400 MHz clock) while operating at standard 1.8V rails, simplifying power-supply design for DDR2 systems.
• Flexible Timing and Burst Options Wide range of CAS latencies (3–9), additive latency choices, and burst length/mode support enable tuning for a variety of system timing requirements.
• Integrated Signal Conditioning On-chip DLL, ODT, OCD impedance adjustment, and duty-cycle correction reduce external tuning effort and help maintain signal integrity at high speeds.
• Compact, Low-Profile Package 84-FBGA thin body (1.0 mm option) provides a high-density, low-profile footprint to save board space while maintaining standard BGA reliability.
• JEDEC Compliance and Refresh Flexibility Standardized refresh behavior and PASR/self-refresh support help manage power and data retention across the specified commercial temperature range.

Why Choose M14D5121632A-2.5BBG2S?

The M14D5121632A-2.5BBG2S positions itself as a straightforward, JEDEC-compliant DDR2 memory component that combines a 32M × 16 organization with DDR2-800 performance and integrated signal-management features. Its on-die termination, DLL, and differential DQS support make it suitable for designers targeting reliable DDR2 operation in a compact 84-FBGA thin package.

This device is appropriate for commercial-grade system designs that require predictable timing options, flexible latency and burst modes, and standard 1.8V operation—offering a balanced choice for board-level memory implementations where density and established DDR2 feature set matter.

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