M14D5121632A-1.8BG2S

The M14D5121632A-1.8BG2S is a DDR2 SDRAM memory device from ESMT featuring a 32M × 16 organization and a rated clock frequency of 533 MHz (DDR2-1066 data rate). It implements an internal pipelined double-data-rate architecture with on-chip DLL and differential data strobe support for high-speed synchronous operation.

Designed for systems implementing DDR2-1066 memory and SSTL_18 interfaces, the device provides a compact 84-ball FBGA (8 mm × 12.5 mm, 1.2 mm height) footprint and operates from a 1.7 V to 1.9 V supply across a commercial temperature range (0 °C to 95 °C).

Key Features

• Memory Organization & Capacity — 32M × 16 organization with a listed memory size of 536.9 Mbit, supporting standard DDR2 addressing and bank architecture.
• Performance — Rated clock frequency of 533 MHz (DDR2-1066 data rate) with CAS latency options and double-data-rate operation (two data transfers per clock).
• Signal & Timing — On-chip DLL, bi-directional differential data strobe (DQS/ DQS̄) with read edge-alignment and write center-alignment, and support for burst lengths of 4 and 8 with sequential and interleave burst types.
• Interface & Standards — SSTL_18 interface, differential clock inputs (CLK/CLK̄), and JEDEC-compliant DDR2 SDRAM signaling and refresh behavior.
• Signal Integrity & Drive Control — On-Die Termination (ODT) options (50/75/150 Ω) and Off-Chip-Driver (OCD) impedance adjustment to help optimize signal quality on high-speed memory buses.
• Power & Voltage — Low-voltage DDR2 operation with VDD and VDDQ specified at 1.8 V ± 0.1 V (operating range 1.7 V to 1.9 V).
• System Reliability — Auto and self-refresh support, Partial Array Self Refresh (PASR), and high-temperature self-refresh rate enable; refresh cycles per JEDEC timing are specified for 0 °C–85 °C and 85 °C–95 °C ranges.
• Package & Mounting — 84-ball FBGA package (8 mm × 12.5 mm) with 1.2 mm maximum body height and surface-mount mounting suitable for compact board-level integration.
• Commercial Temperature Grade — Operating temperature range of 0 °C to 95 °C for commercial applications and JEDEC qualification.
• Write/Masking Support — Data mask (DM) support for write masking and differential DQS groups for DQ0–DQ7 and DQ8–DQ15 (LDQS/LDQS̄ and UDQS/UDQS̄).

Typical Applications

• DDR2-1066 memory subsystems — Use as main or auxiliary DDR2 SDRAM in systems implementing DDR2-1066 data rates with SSTL_18 signaling.
• Compact board-level modules — 84-ball FBGA footprint (8 mm × 12.5 mm, 1.2 mm) for space-constrained PCBs requiring high-density DRAM.
• Multi-bank memory designs — Quad-bank operation and standard DDR2 bank addressing for designs that leverage concurrent bank activity and burst transfers.

Unique Advantages

• Flexible DDR2 performance: Rated for 533 MHz operation with selectable CAS latencies and additive latency options to match system timing requirements.
• Integrated signal conditioning: On-Die Termination and Off-Chip-Driver impedance adjustment provide on-device options to tune signal integrity without external components.
• Low-voltage operation: Operates from 1.7 V to 1.9 V (nominal 1.8 V), enabling compatibility with standard DDR2 power domains.
• JEDEC-compliant behavior: Standard DDR2 refresh schemes, SSTL_18 interface compatibility, and documented timing simplify system integration and validation.
• Compact package density: 84-ball FBGA (8 mm × 12.5 mm, 1.2 mm) offers high memory density in a small board footprint.
• Operational robustness: Auto/self-refresh, PASR, and high-temperature self-refresh options help maintain data retention across the specified commercial temperature range.

Why Choose M14D5121632A-1.8BG2S?

The M14D5121632A-1.8BG2S delivers DDR2-1066 performance in a compact 84-ball FBGA package with on-die termination, DLL, and differential DQS support to address high-speed memory interface requirements. Its 32M × 16 organization, JEDEC-compliant timing, and voltage range (1.7 V–1.9 V) make it suitable for designs that require a standardized DDR2 memory solution with signal integrity and refresh features built in.

This device is aimed at engineers and procurement teams integrating DDR2 SDRAM into compact, high-performance systems needing documented JEDEC behavior, configurable latency options, and industry-standard electrical interfaces.

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