M14D5121632A-1(2M)

The M14D5121632A-1(2M) is a DDR2 SDRAM device in an 84-ball BGA package offering high-speed, double-data-rate memory with a 1.8V supply. It implements an internal pipelined DDR architecture with differential clock and strobe support, delivering parallel memory access suitable for systems that require standard JEDEC DDR2 memory functionality.

Designed for commercial-grade applications, the device provides selectable CAS and additive latency, on-die termination and signal conditioning features to support reliable high-frequency operation up to a 667 MHz clock rate.

Key Features

• Memory Organization and Density — 32M × 16 organization with a total density of 536.9 Mbit, providing a compact footprint for system memory tasks.
• DDR2 Architecture — Internal pipelined double-data-rate operation with bi-directional differential data strobe (DQS/DQS¯) and differential clock inputs for two data accesses per clock cycle.
• Performance Parameters — Clock frequency up to 667 MHz and access time of 15 ns; write cycle time (word/page) 15 ns.
• Latency and Burst Flexibility — CAS latency options (3–9), additive latency (0–7), and burst lengths of 4 or 8 to match system timing and throughput needs.
• Signal Integrity and Termination — On-Die Termination (ODT) with selectable impedances (50/75/150 Ω) and OCD impedance adjustment to improve signal quality at high speeds.
• Power and Interface — 1.8V nominal supply (VDD/VDDQ = 1.8V ±0.1V) and SSTL_18-compatible interface for standard DDR2 system integration.
• Reliability and Standards — JEDEC-standard DDR2 SDRAM compliance and RoHS status: Compliant.
• Package and Mounting — Surface-mount 84-ball BGA (84 Ball BGA) package suitable for compact board layouts; commercial operating range 0 °C to 95 °C.

Typical Applications

• System Memory for Embedded Platforms — Provides parallel DDR2 memory density and timing flexibility for embedded controllers and processing modules requiring standard JEDEC DDR2 interface.
• Consumer and Multimedia Devices — Supports high-rate data transfers and burst modes useful for buffering and transient data storage in consumer electronics designs.
• Networking and Communications Equipment — Differential clocking, DQS support and ODT options help maintain signal integrity in high-speed data buffering and packet-handling applications.

Unique Advantages

• Low-voltage DDR2 operation: 1.8V supply reduces system power compared with older memory technologies while maintaining DDR2 signaling compatibility.
• High-frequency capability: 667 MHz clock support enables elevated data rates for applications that require higher bandwidth within DDR2 class devices.
• Flexible timing configuration: Multiple CAS and additive latency options plus selectable burst lengths let designers tune performance and timing to system requirements.
• Integrated signal conditioning: On-Die Termination and OCD impedance adjustment improve data integrity at high speeds and simplify board-level termination design.
• JEDEC compliance and RoHS: Standardized DDR2 behavior and environmental compliance ease integration and procurement for commercial designs.
• Compact BGA package: 84-ball surface-mount BGA provides a small PCB footprint for space-constrained designs while supporting required I/O density.

Why Choose M14D5121632A-1(2M)?

The M14D5121632A-1(2M) positions itself as a practical DDR2 memory option for commercial-grade designs that need standard JEDEC DDR2 functionality, selectable latency, and on-die termination features. With 32M × 16 organization, 536.9 Mbit density, and 667 MHz clock support, it addresses use cases that require reliable, high-speed parallel memory in a compact BGA package.

This device suits engineers and procurement teams specifying DDR2 memory for systems where SSTL_18 signaling, differential strobes, and selectable timing are required. Its JEDEC compliance, RoHS status, and surface-mount BGA packaging support long-term manufacturability and straightforward board-level integration.

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