M14D5121632A-1.8BBG2M

The M14D5121632A-1.8BBG2M is a 512 Mbit DDR2 SDRAM organized as 32M × 16, designed for systems requiring a JEDEC‑standard DDR2 memory device. It implements an internal pipelined double‑data‑rate architecture with quad bank operation and on‑chip DLL to support double data transfers per clock cycle.

This device targets applications that require a 1.8V low‑voltage DDR2 memory solution with a DDR2‑1066 (533 MHz clock) data rate, delivered in a thin 84‑ball FBGA (1.0 mm body height) surface‑mount package for compact system designs.

Key Features

• Memory Core and Organization 536.9 Mbit total memory organized as 32M × 16 with quad bank architecture for interleaved access patterns.
• DDR2 Double‑Data‑Rate Operation Internal pipelined DDR architecture providing two data accesses per clock cycle; rated for 533 MHz clock (DDR2‑1066 data rate).
• Timing and Performance Typical access time and write cycle time (word/page) listed at 15 ns; CAS latency options available (CL 3–9) and additive latency support as specified in the datasheet.
• Data and Clock Interface Bi‑directional differential data strobe (DQS/ DQS¯), differential clock inputs (CLK/CLK¯) and SSTL_18 signaling support for DDR2 systems.
• Signal Integrity and On‑Die Features On‑die termination (ODT) with selectable impedance including 50/75/150 Ω, off‑chip driver impedance adjustment, and duty cycle corrector to assist signal quality.
• Refresh and Power Management Auto and self refresh support, Partial Array Self Refresh (PASR) and high temperature self refresh enable; refresh cycles per datasheet: 8192 cycles/64 ms (0°C–85°C) and 8192 cycles/32 ms (85°C–95°C).
• Low‑Voltage Supply VDD = 1.8 V typical with allowable supply range 1.7 V – 1.9 V; VDDQ and VDDL supported per datasheet recommendations.
• Package and Mounting 84‑ball FBGA thin package (8 mm × 12.5 mm, 0.8 mm ball pitch) with a maximum body thickness option of 1.0 mm; surface‑mount mounting type.
• Environmental and Qualification JEDEC qualification and RoHS compliant; commercial operating temperature range 0°C to 95°C.

Typical Applications

• Memory subsystems in DDR2 designs Use where a 512 Mbit DDR2‑1066 memory device is required for system memory expansion or buffering.
• Compact embedded platforms Thin 84‑FBGA footprint suits space‑constrained PCB layouts that require standard DDR2 signaling and packaging.
• Low‑voltage DDR2 modules Systems designed around 1.8 V DDR2 power rails that need JEDEC‑compliant timing and interface compatibility.

Unique Advantages

• JEDEC‑standard DDR2 compatibility: Ensures defined timing, refresh, and interface behavior for predictable integration into DDR2 memory subsystems.
• DDR2‑1066 data rate at 1.8 V: Delivers DDR2‑1066 performance while operating within a 1.7 V–1.9 V supply range suitable for standard DDR2 power domains.
• On‑die termination and ODT options: Built‑in termination and driver impedance adjustment simplify board signal‑integrity design and reduce external component needs.
• Thin FBGA package for dense layouts: 84‑ball thin FBGA (1.0 mm) supports compact PCB designs without sacrificing standard DDR2 footprint compatibility.
• Comprehensive refresh and low‑power features: Auto/self refresh, PASR and high‑temperature self refresh options provide flexible power management across the specified temperature range.

Why Choose M14D5121632A-1.8BBG2M?

The M14D5121632A-1.8BBG2M positions itself as a JEDEC‑compliant DDR2 memory device delivering DDR2‑1066 performance in a 512 Mbit density with standard 32M × 16 organization. Its combination of on‑die termination, differential data strobe and clock inputs, and selectable timing modes offers predictable integration into DDR2 system designs that require low‑voltage 1.8 V operation.

This device is suitable for designers and OEMs who need a proven DDR2 memory component in a compact 84‑ball FBGA thin package, with documented refresh behavior and commercial temperature range for deployment in a variety of electronic systems.

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