M14D2561616A-1(2S)

256Mb DDR SDRAM Ind.
Part Description

Ind. -40~95°C, DDRII , 1.8V

Quantity 1,160 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusActive
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package84 Ball BGAMemory FormatDRAMTechnologyDDR2 SDRAM
Memory Size256 MbitAccess Time15 nsGradeIndustrial
Clock Frequency667 MHzVoltage2.5VMemory TypeVolatile
Operating Temperature-40°C – 95°CWrite Cycle Time Word Page15 nsPackaging84 Ball BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.24

Overview of M14D2561616A-1(2S) – Ind. -40~95°C, DDRII , 1.8V

The M14D2561616A-1(2S) is an industrial-grade DDR2 SDRAM device from ESMT designed for high-speed parallel memory subsystems. It implements a pipelined double-data-rate architecture with on-chip DLL and differential clock inputs to support dual-edge data transfers and platform timing alignment.

Key attributes include a 16M × 16 memory organization (268.4 Mbit total), JEDEC compliance, a 667 MHz clock capability (DDR2-1333 data rate), and an extended operating temperature range of -40 °C to 95 °C—features suited to demanding industrial designs that require robust memory performance and thermal tolerance.

Key Features

  • Memory Core & Organization  16M × 16 organization across quad banks with a listed memory size of 268.4 Mbit and 1KB page size for efficient random and sequential access.
  • DDR2 Performance  Internal pipelined double-data-rate architecture with bi-directional differential data strobe (DQS) allowing two data accesses per clock cycle; supports burst lengths of 4 and 8 with sequential and interleave burst types.
  • Timing Flexibility  Support for CAS latency options of 3–9 and additive latency settings from 0–7 for adaptable timing configurations.
  • Clocking & DLL  Differential clock inputs (CLK/CLK¯) and on-chip DLL that align DQ/DQS transitions to the system clock for improved timing margin.
  • Signal Integrity & Drive  On-Die Termination (ODT) with selectable impedance (50/75/150 Ω) and Off-Chip-Driver (OCD) impedance adjustment to optimize signal quality on high-speed buses.
  • Power & Voltage  Designed around DDR2 supply rails with VDD = 1.8V ±0.1V and VDDQ = 1.8V ±0.1V to meet low-voltage DDR2 system requirements.
  • Refresh & Low-Power Options  Auto and self-refresh support, Partial Array Self Refresh (PASR), and high temperature self-refresh rate enable to maintain data retention across the specified temperature range.
  • Package & Mounting  Surface-mount 84-ball BGA with 0.8 mm ball pitch; body options include 8 mm × 12.5 mm with 1.0 mm or 1.2 mm maximum height.
  • Industrial Qualification  JEDEC-standard DDR2 SDRAM with an operating temperature range of -40 °C to 95 °C and RoHS compliance for industrial applications.

Typical Applications

  • Industrial Systems  Memory subsystems in industrial control and automation equipment that require wide operating temperature support and JEDEC-standard DDR2 behavior.
  • Embedded Computing  Embedded platforms and single-board computers that need a compact, surface-mount DDR2 memory with 84-ball BGA packaging and flexible timing options.
  • High-frequency Memory Subsystems  Designs leveraging a 667 MHz clock rate (DDR2-1333 data rate) for parallel memory interfaces demanding dual-edge data transfers and controlled signal integrity.

Unique Advantages

  • Wide Temperature Range: Rated for -40 °C to 95 °C to support reliability in harsh industrial environments.
  • JEDEC Compliance: Adheres to DDR2 SDRAM JEDEC standards, simplifying integration with standard DDR2 memory controllers.
  • Flexible Timing and Performance: Multiple CAS and additive latency options plus burst length modes enable tuning for diverse system timing and throughput requirements.
  • Signal-quality Features: On-Die Termination and OCD impedance adjustment help maintain signal integrity on high-speed memory traces.
  • Compact BGA Footprint: 84-ball BGA package with 0.8 mm pitch reduces PCB area while supporting surface-mount assembly processes.
  • Power-optimized DDR2 Voltage: 1.8V VDD/VDDQ operation aligns with DDR2 power domains for lower-voltage system designs.

Why Choose M14D2561616A-1(2S)?

The M14D2561616A-1(2S) positions itself as a reliable industrial-grade DDR2 SDRAM component combining JEDEC-standard architecture, a high clock capability (667 MHz), and a wide -40 °C to 95 °C operating range. Its on-chip DLL, differential clocking, and signal-integrity features such as ODT and OCD make it suitable for designs that require deterministic timing and stable high-speed operation.

This device is well matched to engineers and procurement teams specifying compact BGA memory for rugged embedded systems, industrial controllers, and high-frequency memory subsystems where standardized DDR2 behavior, timing flexibility, and thermal robustness are required.

Request a quote or submit a purchasing inquiry to obtain pricing, availability, and lead-time details for the M14D2561616A-1(2S).

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