M14D2561616A-1(2S)
| Part Description |
Ind. -40~95°C, DDRII , 1.8V |
|---|---|
| Quantity | 1,160 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 84 Ball BGA | Memory Format | DRAM | Technology | DDR2 SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 15 ns | Grade | Industrial | ||
| Clock Frequency | 667 MHz | Voltage | 2.5V | Memory Type | Volatile | ||
| Operating Temperature | -40°C – 95°C | Write Cycle Time Word Page | 15 ns | Packaging | 84 Ball BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.24 |
Overview of M14D2561616A-1(2S) – Ind. -40~95°C, DDRII , 1.8V
The M14D2561616A-1(2S) is an industrial-grade DDR2 SDRAM device from ESMT designed for high-speed parallel memory subsystems. It implements a pipelined double-data-rate architecture with on-chip DLL and differential clock inputs to support dual-edge data transfers and platform timing alignment.
Key attributes include a 16M × 16 memory organization (268.4 Mbit total), JEDEC compliance, a 667 MHz clock capability (DDR2-1333 data rate), and an extended operating temperature range of -40 °C to 95 °C—features suited to demanding industrial designs that require robust memory performance and thermal tolerance.
Key Features
- Memory Core & Organization 16M × 16 organization across quad banks with a listed memory size of 268.4 Mbit and 1KB page size for efficient random and sequential access.
- DDR2 Performance Internal pipelined double-data-rate architecture with bi-directional differential data strobe (DQS) allowing two data accesses per clock cycle; supports burst lengths of 4 and 8 with sequential and interleave burst types.
- Timing Flexibility Support for CAS latency options of 3–9 and additive latency settings from 0–7 for adaptable timing configurations.
- Clocking & DLL Differential clock inputs (CLK/CLK¯) and on-chip DLL that align DQ/DQS transitions to the system clock for improved timing margin.
- Signal Integrity & Drive On-Die Termination (ODT) with selectable impedance (50/75/150 Ω) and Off-Chip-Driver (OCD) impedance adjustment to optimize signal quality on high-speed buses.
- Power & Voltage Designed around DDR2 supply rails with VDD = 1.8V ±0.1V and VDDQ = 1.8V ±0.1V to meet low-voltage DDR2 system requirements.
- Refresh & Low-Power Options Auto and self-refresh support, Partial Array Self Refresh (PASR), and high temperature self-refresh rate enable to maintain data retention across the specified temperature range.
- Package & Mounting Surface-mount 84-ball BGA with 0.8 mm ball pitch; body options include 8 mm × 12.5 mm with 1.0 mm or 1.2 mm maximum height.
- Industrial Qualification JEDEC-standard DDR2 SDRAM with an operating temperature range of -40 °C to 95 °C and RoHS compliance for industrial applications.
Typical Applications
- Industrial Systems Memory subsystems in industrial control and automation equipment that require wide operating temperature support and JEDEC-standard DDR2 behavior.
- Embedded Computing Embedded platforms and single-board computers that need a compact, surface-mount DDR2 memory with 84-ball BGA packaging and flexible timing options.
- High-frequency Memory Subsystems Designs leveraging a 667 MHz clock rate (DDR2-1333 data rate) for parallel memory interfaces demanding dual-edge data transfers and controlled signal integrity.
Unique Advantages
- Wide Temperature Range: Rated for -40 °C to 95 °C to support reliability in harsh industrial environments.
- JEDEC Compliance: Adheres to DDR2 SDRAM JEDEC standards, simplifying integration with standard DDR2 memory controllers.
- Flexible Timing and Performance: Multiple CAS and additive latency options plus burst length modes enable tuning for diverse system timing and throughput requirements.
- Signal-quality Features: On-Die Termination and OCD impedance adjustment help maintain signal integrity on high-speed memory traces.
- Compact BGA Footprint: 84-ball BGA package with 0.8 mm pitch reduces PCB area while supporting surface-mount assembly processes.
- Power-optimized DDR2 Voltage: 1.8V VDD/VDDQ operation aligns with DDR2 power domains for lower-voltage system designs.
Why Choose M14D2561616A-1(2S)?
The M14D2561616A-1(2S) positions itself as a reliable industrial-grade DDR2 SDRAM component combining JEDEC-standard architecture, a high clock capability (667 MHz), and a wide -40 °C to 95 °C operating range. Its on-chip DLL, differential clocking, and signal-integrity features such as ODT and OCD make it suitable for designs that require deterministic timing and stable high-speed operation.
This device is well matched to engineers and procurement teams specifying compact BGA memory for rugged embedded systems, industrial controllers, and high-frequency memory subsystems where standardized DDR2 behavior, timing flexibility, and thermal robustness are required.
Request a quote or submit a purchasing inquiry to obtain pricing, availability, and lead-time details for the M14D2561616A-1(2S).
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A