M14D2561616A-1.8BG2S
| Part Description |
DDR2 SDRAM 256Mbit 533MHz 1.8V 84-FBGA |
|---|---|
| Quantity | 418 Available (as of May 6, 2026) |
Specifications & Environmental
| Device Package | 84-FBGA (8x12.5) | Memory Format | DRAM | Technology | DRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 15 ns | Grade | Commercial | ||
| Clock Frequency | 533 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 95°C | Write Cycle Time Word Page | 15 ns | Packaging | 84-FBGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.24 |
Overview of M14D2561616A-1.8BG2S – DDR2 SDRAM 256Mbit 533MHz 1.8V 84-FBGA
The M14D2561616A-1.8BG2S is a JEDEC-compliant DDR2 SDRAM device organized as 16M × 16 with a product-class data rate of DDR2-1066 (533 MHz clock). It implements a pipelined double-data-rate architecture with differential DQS and on-chip DLL to align data timing for reliable high-speed transfers.
Designed for surface-mount deployment in an 84-ball FBGA (8 × 12.5 mm) footprint and operating from a 1.7 V to 1.9 V supply, this part targets systems that require standard DDR2 performance, compact package integration, and JEDEC-level interoperability.
Key Features
- Core & Architecture Internal pipelined double-data-rate design enabling two data accesses per clock cycle; on-chip DLL and differential clock inputs (CLK/CLK̄) for aligned timing.
- Data Strobe & I/O Bi-directional differential data strobe (DQS/ DQS̄) with edge- and center-aligned modes for READ and WRITE; data I/O transitions on both edges of DQS.
- Memory Organization 16M × 16 organization with a stated memory size in product specifications of 268.4 Mbit and a 1 KB page size.
- Performance & Timing 533 MHz clock frequency (DDR2-1066 data rate); supported CAS Latency options 3–9 and additive latency 0–7; burst lengths of 4 and 8.
- Voltage & Interface Operates from 1.7 V to 1.9 V (VDD = VDDQ = 1.8 V ± 0.1 V) and uses an SSTL_18 interface standard.
- Signal Integrity & On-Die Features On-Die Termination (ODT) with selectable impedance (50/75/150 Ω), off-chip-driver (OCD) impedance adjustment, and Duty Cycle Corrector (DCC) for improved signal quality.
- Refresh & Low-Power Options Auto and self-refresh support, Partial Array Self Refresh (PASR), high-temperature self-refresh rate enable; refresh cycles: 8192 cycles/64 ms at 0 °C–85 °C and 8192 cycles/32 ms at >85 °C–95 °C.
- Package & Mounting 84-FBGA surface mount package (8.0 mm × 12.5 mm × 1.2 mm body, 0.8 mm ball pitch) suitable for space-constrained board designs.
- Reliability & Compliance JEDEC qualification and RoHS-compliant construction; commercial grade operating range 0 °C to 95 °C.
Typical Applications
- System Memory for DDR2-1066 Designs Use as main DDR2 SDRAM in systems requiring a DDR2-1066 (533 MHz clock) data rate and JEDEC-compliant timing options.
- Compact Embedded Systems Surface-mount 84-FBGA package allows integration into space-constrained embedded boards where a 1.8 V DDR2 solution is needed.
- High-Density Memory Subsystems 16M × 16 organization and selectable CAS/burst timing make this device suitable for designs that require flexible memory timing and standard DDR2 interfaces.
Unique Advantages
- JEDEC Compliance: Ensures predictable interoperability with other DDR2-compliant components and controllers.
- Flexible Timing Options: Wide range of CAS latency and additive latency settings (CL 3–9, AL 0–7) to match system timing and performance trade-offs.
- On-Die Termination & ODT Options: Multiple ODT resistance choices (50/75/150 Ω) and OCD adjustment improve signal integrity for high-speed board layouts.
- Low-Voltage Operation: Standard 1.8 V supply range (1.7 V–1.9 V) reduces power compared with older nominal-voltage devices while maintaining DDR2 signaling.
- Compact BGA Footprint: 84-ball FBGA package (8 × 12.5 mm) provides a small PCB footprint for higher system integration density.
- Robust Refresh & Power Features: Auto/self-refresh, PASR, and temperature-aware refresh intervals support consistent data retention across the specified commercial temperature range.
Why Choose M14D2561616A-1.8BG2S?
The M14D2561616A-1.8BG2S is positioned for designs that need a JEDEC-standard DDR2 SDRAM device offering DDR2-1066-class data rates, flexible timing, and compact surface-mount packaging. Its combination of on-die termination, DLL alignment, and configurable timing makes it suitable for systems that require predictable DDR2 behavior and board-level signal integrity options.
This part is well suited to engineers specifying a 1.8 V DDR2 memory device with a compact 84-FBGA footprint, commercial operating temperature coverage, and RoHS compliance. Its feature set supports adaptable timing, refresh management, and integration into space-constrained memory subsystems.
Request a quote or submit a procurement inquiry to receive pricing, availability, and lead-time details for the M14D2561616A-1.8BG2S.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A